公开(公告)号：US5239614A

公开(公告)日：1993-08-24

申请号：US791545

申请日：1991-11-14

申请人： Seiko Ueno ,  Ken Nakao ,  Kikuo Yamabe ,  Keitaro Imai

发明人： Seiko Ueno ,  Ken Nakao ,  Kikuo Yamabe ,  Keitaro Imai

IPC分类号： H01L21/22 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31

CPC分类号： H01L21/67115

摘要： A heat-treating method comprising preparing a plurality of wafers parallel to one another in a process tube while keeping their surfaces to be treated substantially horizontal, arranging plural MoSi.sub.2 wire heaters along the longitudinal axis of the process tube so as to be placed around the process tube, adjusting the amount of current supplied to the heaters to form on the treated surface of each of the wafers temperature gradient extending from one side of the outer circumferential rim of each of the wafers to the other side thereof, and rotating the wafers in their surfaces.

摘要翻译： 一种热处理方法，包括在处理管中彼此平行地制备多个晶片，同时保持其待处理的表面基本上水平，沿着处理管的纵向轴线布置多个MoSi2线加热器，以便围绕该工艺 调节供应到加热器的电流量，以在每个晶片的每个晶片的处理表面上形成从每个晶片的外周边缘的一侧延伸到另一侧的温度梯度，并且将晶片在它们的 表面。

公开(公告)号：US5297956A

公开(公告)日：1994-03-29

申请号：US799931

申请日：1991-11-29

申请人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

发明人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

IPC分类号： H01L21/324 ,  C30B31/12 ,  C30B31/14 ,  H01L21/22 ,  H01L21/31 ,  H01L21/673 ,  H01L21/683 ,  F23D5/00

CPC分类号： C30B31/12 ,  C30B31/14

摘要： A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.

摘要翻译： 一种热处理装置中的热处理方法和装置，其特征在于，具有要加入预定气体的加热室，设置在所述加热室周围的加热器和设置在所述加热室中的夹具，用于支撑待处理的多个基板的晶片 彼此并联，其中为了使热处理中要处理的基板的晶片的温度分布均匀，形成夹具以确定其尺寸和形状，其具有在 根据具有预定形状确定步骤的热处理方法的梯度，使得夹具形成为环状托盘（即，支撑环），用于在周边保持要处理的基板，并且托盘的厚度等于或等于 其外周侧比其内周侧厚。

公开(公告)号：US5431561A

公开(公告)日：1995-07-11

申请号：US166014

申请日：1993-12-14

申请人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

发明人： Kikuo Yamabe ,  Keitaro Imai ,  Katsuya Okumura ,  Ken Nakao ,  Seikou Ueno

IPC分类号： H01L21/324 ,  C30B31/12 ,  C30B31/14 ,  H01L21/22 ,  H01L21/31 ,  H01L21/673 ,  H01L21/683 ,  F27D5/00

CPC分类号： C30B31/12 ,  C30B31/14

摘要： A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.

摘要翻译： 一种热处理装置中的热处理方法和装置，其特征在于，具有要加入预定气体的加热室，设置在所述加热室周围的加热器和设置在所述加热室中的夹具，用于支撑待处理的多个基板的晶片 彼此并联，其中为了使热处理中要处理的基板的晶片的温度分布均匀，形成夹具以确定其尺寸和形状，其具有在 根据具有预定形状确定步骤的热处理方法的梯度，使得夹具形成为环状托盘（即，支撑环），用于在周边保持要处理的基板，并且托盘的厚度等于或等于 其外周侧比其内周侧厚。

公开(公告)号：US5189503A

公开(公告)日：1993-02-23

申请号：US683132

申请日：1991-04-10

申请人： Kyoichi Suguro ,  Keitaro Imai ,  Mitsutoshi Koyama ,  Kikuo Yamabe

发明人： Kyoichi Suguro ,  Keitaro Imai ,  Mitsutoshi Koyama ,  Kikuo Yamabe

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L27/108 ,  H01L29/92

CPC分类号： H01L27/10808 ,  H01L28/40 ,  H01L21/31604

摘要： A dielectric insulation film consists of a metal oxide and pieces of dissimilar metal element added to the metal oxide. A positive charge number under an ionized state of the dissimilar metal element is smaller by one than that of the metal oxide. An ionic charge number of the dissimilar metal element is of a predetermined one kind. The dielectric insulation film is formed as an insulation film of capacitor of each cell of a semiconductor device according to a chemical vapor deposition (CVD) method in the process of forming cells of the semiconductor device.

摘要翻译： 介电绝缘膜由金属氧化物和添加到金属氧化物中的异种金属元素组成。 异种金属元素的离子化状态下的正电荷数小于金属氧化物的正电荷数。 异种金属元素的离子电荷数是预定的一种。 在形成半导体器件的电池的工艺中，根据化学气相沉积（CVD）方法，将介电绝缘膜形成为半导体器件的每个电池的电容器的绝缘膜。

公开(公告)号：US4735824A

公开(公告)日：1988-04-05

申请号：US866310

申请日：1986-05-23

申请人： Kikuo Yamabe ,  Keitaro Imai

发明人： Kikuo Yamabe ,  Keitaro Imai

IPC分类号： H01L29/00 ,  H01L21/28 ,  H01L21/8242 ,  B05D5/12

CPC分类号： H01L21/28211 ,  H01L27/10861

摘要： A method of forming an MOS capacitor by the steps of cutting a groove in the surface of a silicon substrate by the RIE process, thermally oxidizing the surface of said silicon substrate, depositing a capacitor electrode on said capacitor-insulating layer, being characterized in that when the capacitor-insulating layer is deposited, the surface of the silicon substrate is thermally oxidized in an oxidizing atmosphere containing 15% by vol. of steam.

摘要翻译： 通过以下步骤形成MOS电容器的方法：通过RIE工艺在硅衬底的表面中切割沟槽，热氧化所述硅衬底的表面，在所述电容器绝缘层上沉积电容器电极，其特征在于， 当沉积电容器绝缘层时，硅衬底的表面在含有15体积％的氧化气氛中被热氧化。 的蒸汽。

公开(公告)号：US08430326B2

公开(公告)日：2013-04-30

申请号：US13112373

申请日：2011-05-20

申请人： Jun Koyama ,  Keitaro Imai

发明人： Jun Koyama ,  Keitaro Imai

IPC分类号： G06K19/06

CPC分类号： H01L27/13 ,  G11C17/16 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266

摘要： A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element.

摘要翻译： 可以用作ID芯片和数据的半导体器件可以仅重写一次。 此外，半导体器件可以用作ID芯片，并且可以写入数据，除非制造芯片。 本发明在绝缘基板上具有调制电路，解调电路，逻辑电路，存储电路和天线电路。 调制电路和解调电路电连接到天线电路，解调电路连接到逻辑电路，存储电路存储逻辑电路的输出信号，存储电路是使用熔丝元件的熔丝存储电路 。

公开(公告)号：US20120214259A1

公开(公告)日：2012-08-23

申请号：US13213458

申请日：2011-08-19

申请人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

发明人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

IPC分类号： H01L21/66

CPC分类号： G01N23/2258 ,  G01N2223/611

摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.

摘要翻译： 经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。 氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素 通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

公开(公告)号：US08040059B2

公开(公告)日：2011-10-18

申请号：US10569528

申请日：2004-08-25

申请人： Keitaro Imai ,  Aya Anzai ,  Yasuko Watanabe

发明人： Keitaro Imai ,  Aya Anzai ,  Yasuko Watanabe

IPC分类号： H01L51/50 ,  H01L51/52

CPC分类号： H01L27/3276 ,  H01L23/564 ,  H01L27/1222 ,  H01L27/3258 ,  H01L51/0005 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.

摘要翻译： 本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤 设备。 本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。 此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。 此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。 因此，提供了一种生产具有提高的产量的显示装置的方法。

公开(公告)号：US20110073865A1

公开(公告)日：2011-03-31

申请号：US12960711

申请日：2010-12-06

申请人： Keitaro Imai

发明人： Keitaro Imai

IPC分类号： H01L33/16

CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/1292

摘要： Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.

摘要翻译： 通常，进行光刻和各向异性蚀刻以在电极和布线等之间形成插塞，从而增加步骤数量，使吞吐量更差并且产生不必要的材料。 为了解决这些问题，本发明提供一种显示装置的制造方法，其包括导电层或布线的形成步骤以及可处理较大基板的接触塞。 在形成用于电连接包括多层的导电图案的插头的情况下，在基底导电层图案上形成由导体制成的柱，然后在整个表面上形成绝缘膜之后，蚀刻绝缘膜 背面露出导体柱，并且通过喷墨形成上层中的导电图案。 在这种情况下，当处理导体柱时，可以通过喷墨形成本身作为掩模的抗蚀剂。

公开(公告)号：US07482743B2

公开(公告)日：2009-01-27

申请号：US11592250

申请日：2006-11-03

申请人： Satoshi Seo ,  Keitaro Imai

发明人： Satoshi Seo ,  Keitaro Imai

IPC分类号： H05B33/00

CPC分类号： H01L51/5092 ,  H01L27/3244 ,  Y10S428/917

摘要： Provided is a means for improving the capability of injecting electrons from a cathode in a luminous element and solving problems about the production process thereof. In the present invention, a material having a smaller work function than a cathode material is used to form an inorganic conductive layer between the cathode and an organic compound layer. In this way, the capability of injecting electrons from the cathode can be improved. Furthermore, the film thereof can be thicker than that of a conventional cathode buffer layer formed by using an insulating material. Therefore, the film thickness can easily be controlled, and a decrease in production costs and an improvement in yield can be achieved.

摘要翻译： 提供了用于提高从发光元件中的阴极注入电子的能力的手段，并且解决了关于其制造方法的问题。 在本发明中，使用具有比正极材料功函数小的材料在阴极和有机化合物层之间形成无机导电层。 以这种方式，可以提高从阴极注入电子的能力。 此外，其膜可以比通过使用绝缘材料形成的常规阴极缓冲层的膜厚。 因此，可以容易地控制膜厚度，并且可以实现生产成本的降低和产率的提高。