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    Method of manufacturing semiconductor chip
    2.
    发明授权
    Method of manufacturing semiconductor chip 有权
    制造半导体芯片的方法

    公开(公告)号：US08871640B2

    公开(公告)日：2014-10-28

    申请号：US13262830

    申请日：2010-04-02

    申请人： Takao Yonehara ,  Kiyofumi Sakaguchi ,  Nobuo Kawase ,  Kenji Nakagawa

    发明人： Takao Yonehara ,  Kiyofumi Sakaguchi ,  Nobuo Kawase ,  Kenji Nakagawa

    IPC分类号： H01L21/50 ,  H01L21/683 ,  H01L25/065 ,  H01L23/00

    CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L24/94 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.

    摘要翻译： 制造包括集成电路和穿透半导体层的贯通电极的半导体芯片的方法包括以下步骤：制备包括在剥离层上形成的剥离层和半导体层的第一基板; 在半导体层中形成集成电路; 在所述半导体层中形成具有未到达所述剥离层的深度的孔或槽; 用电导体填充孔或槽; 将第二衬底接合到所述半导体层以形成接合结构; 在剥离层分离粘合结构，制备半导体层转移到其上的第二基板; 以及去除通过分离而暴露的半导体层的反面的至少一部分，以露出电导体的底部。

    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 有权

    公开(公告)号：US08617922B2

    公开(公告)日：2013-12-31

    申请号：US13262915

    申请日：2010-04-02

    申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Nobuo Kawase ,  Kenji Nakagawa

    发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Nobuo Kawase ,  Kenji Nakagawa

    IPC分类号： H01L21/00

    摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

    METHOD OF MANUFACTURING SEMICONDUCTOR CHIP
    5.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR CHIP 有权
    制造半导体芯片的方法

    公开(公告)号：US20120028414A1

    公开(公告)日：2012-02-02

    申请号：US13262830

    申请日：2010-04-02

    申请人： Takao Yonehara ,  Kiyofumi Sakaguchi ,  Nobuo Kawase ,  Kenji Nakagawa

    发明人： Takao Yonehara ,  Kiyofumi Sakaguchi ,  Nobuo Kawase ,  Kenji Nakagawa

    IPC分类号： H01L21/50

    CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L24/94 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.

    摘要翻译： 制造包括集成电路和穿透半导体层的贯通电极的半导体芯片的方法包括以下步骤：制备包括在剥离层上形成的剥离层和半导体层的第一基板; 在半导体层中形成集成电路; 在所述半导体层中形成具有未到达所述剥离层的深度的孔或槽; 用电导体填充孔或槽; 将第二衬底接合到所述半导体层以形成接合结构; 在剥离层分离粘合结构，制备半导体层转移到其上的第二基板; 以及去除通过分离而暴露的半导体层的反面的至少一部分，以露出电导体的底部。

    Sample processing apparatus and method
    8.
    发明授权
    Sample processing apparatus and method 失效

    公开(公告)号：US06609553B2

    公开(公告)日：2003-08-26

    申请号：US10175004

    申请日：2002-06-20

    申请人： Kazutaka Yanagita ,  Takao Yonehara ,  Kazuaki Omi ,  Kiyofumi Sakaguchi

    发明人： Kazutaka Yanagita ,  Takao Yonehara ,  Kazuaki Omi ,  Kiyofumi Sakaguchi

    IPC分类号： B32B3500

    CPC分类号： H01L21/67092 ,  Y10S156/942 ,  Y10T29/49821 ,  Y10T83/364 ,  Y10T156/1121 ,  Y10T156/1126 ,  Y10T156/1374 ,  Y10T156/1922 ,  Y10T156/1939 ,  Y10T156/1978

    摘要： This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous layer (101b) while rotating the bonded substrate stack (101) to partially separate the bonded substrate stack (101) while leaving the central portion of the porous layer (101b) as an unseparated region. In the second process, the jet is ejected to the porous layer (101b) while rotation of the bonded substrate stack (101) is stopped. A force is applied to the unseparated region from a predetermined direction to completely separate the bonded substrate stack (101). Also, the first region (peripheral portion) and second region (central portion) of the bonded substrate stack (101) having the porous layer (101b) are separated using a jet and ultrasonic wave, respectively. More specifically, the first region is separated by a jet ejected from a nozzle (102) while rotating the bonded substrate stack (101). On the other hand, the second region is separated by an ultrasonic wave generated by an ultrasonic vibrator (1203).

    Method of producing thin-film single-crystal device, solar cell module and method of producing the same
    9.
    发明授权
    Method of producing thin-film single-crystal device, solar cell module and method of producing the same 失效
    薄膜单晶器件的制造方法，太阳能电池模块及其制造方法

    公开(公告)号：US06452091B1

    公开(公告)日：2002-09-17

    申请号：US09614548

    申请日：2000-07-12

    申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

    发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

    IPC分类号： H01L2102

    CPC分类号： H01L21/76259 ,  H01L21/304 ,  Y10T156/1002 ,  Y10T156/1028 ,  Y10T156/1041 ,  Y10T156/1048 ,  Y10T156/1049

    摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.

    摘要翻译： 进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于 剥离的单晶。 该单晶体用于太阳能电池和图像显示元件的驱动电路部件。 提供了当从基板剥离时防止单晶层的质量和产量降低的方法。 制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。 因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。