摘要:
A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要:
A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要:
A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要:
A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34).This non-volatile memory achieves high integration at low cost.
摘要:
The present invention relates to a non-volatile memory comprising: a first electrode (11); a second electrode (12); and a phase-change recording medium (14) sandwiched between the first electrode (11) and the second electrode (12), in which resistance value is varied by applying an electrical pulse across the first electrode (11) and the second electrode (12), at least one of the first electrode (11) and the second electrode (12) contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium (14) is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.
摘要:
A transistor manufacturing method includes: forming a gate electrode above a substrate; forming a gate insulator above the gate electrode; forming source and drain electrodes above the gate insulator; forming a sacrificial layer above the source and drain electrodes; forming a partition wall layer above the sacrificial layer; forming an opening by patterning the partition wall layer to partly expose the sacrificial layer; removing the sacrificial layer to expose the source and drain electrodes; and forming an organic semiconductor layer to cover the source and drain electrodes and the gate insulator, wherein the source and drain electrodes occupy 50% or more of a surface area of the opening, and the source and drain electrodes are spaced apart at an interval smaller than an average granular diameter of crystals each of which is at least partly positioned above the source or drain electrode.
摘要:
The organic thin-film transistor according to the present invention includes: a gate electrode line on a substrate in a first region: a first signal line layer in a second region; a gate insulating film covering the gate electrode line and the first signal line layer; bank layers on the gate insulating film; a second signal line layer on the bank layer over the first signal line; a drain electrode and a source electrode line which are located on the bank layers and in at least one opening between the bank layers in the first region; a semiconductor layer located at least in the opening and banked up by the bank layers, the drain electrode, and the source electrode line; and a protection film covering the semiconductor layer.
摘要:
A carbon material for negative electrode of a secondary battery, in particular lithium-ion secondary battery, is prepared by pyrolysis in an inert gas atmosphere or in a vacuum of a composite resin obtained by dissolving pitch in a pitch-soluble resin such as a nobolac phenol resin as it is, or a resin solidified by curing treatment in a state in which the above composite resin is dispersed in a resin solidified by curing treatment or in an uncured resin having a phenol hydroxyl radical such as resol type phenol resin, followed by pulverization in an inert gas, and further heat treatment in an inert gas atmosphere or in a vacuum. Also, a negative electrode material with which irreversible capacity is small, initial discharge capacity is large, and capacity decrease due to cycles is small can be provided by pyrolyzing in an inert gas atmosphere or in a vacuum powder of a resin such as a resol type phenol resin the primary chain of which containing an aromatic compound, or pyrolyzing in an inert gas atmosphere or in a vacuum in a first step, followed by heat treatment in a vacuum in a second step. By employing these negative electrode materials, it is possible to achieve a higher capacity in lithium-ion secondary batteries.
摘要:
A transistor manufacturing method includes: forming a gate electrode above a substrate; forming a gate insulator above the gate electrode; forming source and drain electrodes above the gate insulator; forming a sacrificial layer above the source and drain electrodes; forming a partition wall layer above the sacrificial layer; forming an opening by patterning the partition wall layer to partly expose the sacrificial layer; removing the sacrificial layer to expose the source and drain electrodes; and forming an organic semiconductor layer to cover the source and drain electrodes and the gate insulator, wherein the source and drain electrodes occupy 50% or more of a surface area of the opening, and the source and drain electrodes are spaced apart at an interval smaller than an average granular diameter of crystals each of which is at least partly positioned above the source or drain electrode.
摘要:
Provided is a manufacturing method for a semiconductor transistor comprising: forming a resist layer containing resist material on a base layer including a substrate; patterning the resist layer to form apertures therein; forming a metal layer by disposing metallic material to cover the resist layer and to fill the apertures formed in the resist layer; removing a metal oxide layer formed by oxidation of a top surface of the metal layer by performing cleaning by using a cleaning liquid; forming the source electrode and the drain electrode by removing the resist layer by using a dissolution liquid different from the cleaning liquid, the source electrode and the drain electrode constituted of the metallic material having been disposed in the apertures; and forming a semiconductor layer so as to cover the source electrode and the drain electrode.