公开(公告)号：US20060223306A1

公开(公告)日：2006-10-05

申请号：US10567733

申请日：2004-07-23

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Kenichi Nishizawa ,  Yasuhiro Terai ,  Akira Asano

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Kenichi Nishizawa ,  Yasuhiro Terai ,  Akira Asano

IPC分类号： H01L21/20 ,  H01L21/4763 ,  H01L21/36

CPC分类号： H01L21/0212 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3127

摘要： A film forming method comprise the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio, defined as a ratio of a number of F atoms to a number of C atoms in the source gas molecule, wherein the F/C ratio is larger than 1 but smaller than 2.

摘要翻译： 一种成膜方法包括以下步骤：通过使用含有C和F的源气体形成F-掺杂的碳膜，并通过自由基改性F-掺杂的碳膜，源气体的F / C比定义为比率 的多个F原子与源气体分子中的多个C原子，其中F / C比大于1但小于2。

公开(公告)号：US20060251828A1

公开(公告)日：2006-11-09

申请号：US10549859

申请日：2004-03-24

申请人： Yasuo Kobayashi ,  Kohei Kawamura ,  Akira Asano ,  Yasuhiro Terai ,  Kenichi Nishizawa

发明人： Yasuo Kobayashi ,  Kohei Kawamura ,  Akira Asano ,  Yasuhiro Terai ,  Kenichi Nishizawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/3244 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3127

摘要： A plasma-assisted deposition system for carrying out a plasma-assisted deposition method has a processing vessel defining a vacuum chamber and having an open upper end, a dielectric member covering the open upper end of the processing vessel, and a flat antenna member placed on the upper surface of the dielectric member. A coaxial waveguide has one end connected to the upper surface of the flat antenna member and the other end connected to a microwave generator. The flat antenna member is provided with many slots of a length corresponding to half the wavelength of a microwave arranged on concentric circles. For example, a circularly polarized microwave is radiated from the slots into a processing space to produce a source gas plasma. Electron temperature in the plasma in terms of mean square velocity is 3 eV or below and the electron density in the plasma is 5×1011 electrons per cubic centimeter or above. The plasma is used for depositing a fluorine-containing carbon film. Preferably, the process pressure is 19.95 Pa or below. Under such process conditions for depositing a fluorine-containing carbon film by using the plasma, the source gas, such as C5F8 gas, is decomposed properly to form a structure of long CF chains. A interlayer insulation film thus formed has a small relative dielectric constant and permits only a low leakage current.

摘要翻译： 用于执行等离子体辅助沉积方法的等离子体辅助沉积系统具有限定真空室并具有敞开的上端的处理容器，覆盖处理容器的敞开的上端的电介质构件和放置在 电介质构件的上表面。 同轴波导的一端连接到平坦天线构件的上表面，另一端连接到微波发生器。 扁平天线构件设置有多个长度对应于布置在同心圆上的微波的一半波长的槽。 例如，圆形极化微波从狭缝辐射到处理空间中以产生源气体等离子体。 等离子体中的平均电子速度的电子温度为3eV以下，等离子体中的电子密度为每立方厘米以上5×10 11电子。 等离子体用于沉积含氟碳膜。 优选地，工艺压力为19.95Pa或更低。 在通过使用等离子体沉积含氟碳膜的这种工艺条件下，诸如C 5 F 8气体的源气体被适当地分解以形成结构 的长CF链。 这样形成的层间绝缘膜具有小的相对介电常数，并且仅允许低的漏电流。

公开(公告)号：US20060068583A1

公开(公告)日：2006-03-30

申请号：US10711649

申请日：2004-09-29

申请人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph Hillman ,  Bentley Palmer

发明人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph Hillman ,  Bentley Palmer

IPC分类号： H01L21/4763

CPC分类号： H01L21/76826 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/32051 ,  H01L21/76814

摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。

公开(公告)号：US07307019B2

公开(公告)日：2007-12-11

申请号：US10711649

申请日：2004-09-29

申请人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph T. Hillman ,  Bentley Palmer

发明人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph T. Hillman ,  Bentley Palmer

IPC分类号： H01L21/302

CPC分类号： H01L21/76826 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/32051 ,  H01L21/76814

摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。

公开(公告)号：US20100032838A1

公开(公告)日：2010-02-11

申请号：US12516862

申请日：2007-11-30

申请人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

发明人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

IPC分类号： H01L23/532 ,  H01L21/314 ,  C09D1/00

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/76811 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.

摘要翻译： 本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。 由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。 因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

公开(公告)号：US20070077737A1

公开(公告)日：2007-04-05

申请号：US10580036

申请日：2004-11-19

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H01L21/26 ,  H01L21/42 ,  H05H1/24

CPC分类号： C23C16/511 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244

摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

摘要翻译： 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，从气体供给构件（3）供给到处理室（1）中的C 5 C 8 C 8气体被变更（激活）为等离子体，从而 在半导体晶片（W）上形成一定厚度的含氟碳膜。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂布过程中，将C 5 F 8 N气体变成等离子体，并且含氟碳的预涂膜比含氟 形成在成膜工艺中形成的碳膜。

公开(公告)号：US08017197B2

公开(公告)日：2011-09-13

申请号：US10580036

申请日：2004-11-19

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H05H1/24 ,  C23C14/02 ,  C23C16/00 ,  C23F1/00

CPC分类号： C23C16/511 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244

摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

摘要翻译： 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，将从气体供给部件（3）供给到处理室（1）的C5F8气体变更（激活）为等离子体，以在半导体晶片（W）上形成一定厚度的含氟碳膜 ）。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂工序中，将C5F8气体变成等离子体，形成比成膜工序中形成的含氟碳膜薄的含氟碳的预涂膜。

公开(公告)号：US07776736B2

公开(公告)日：2010-08-17

申请号：US11596186

申请日：2005-05-10

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H01L29/40 ,  H01L21/4763

CPC分类号： H01L21/76801 ,  C23C16/30 ,  C23C16/45565 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/76825 ,  H01L21/76826

摘要： Disclosed are a substrate for electronic devices such as semiconductor devices and a method for processing the same, In the processing method, firstly a substrate for electronic devices is prepared and an insulating film (I) composed of a fluorocarbon (CF) is formed on the surface of the substrate. Then, fluorine (F) atoms exposed in the surface of the insulating film (I) are removed therefrom by bombarding the surface of the insulating film (I) with, for example, active species (KR+) produced in a krypton (Kr) gas plasma. In this connection, the substrate is kept out of contact with moisture at least from immediately after the insulating film forming step until completion of the fluorine removing step.

摘要翻译： 公开了半导体装置等的电子设备用基板及其加工方法。在该处理方法中，首先准备电子器件用基板，在其上形成由碳氟化合物（CF）构成的绝缘膜（I） 基板的表面。 然后，通过用例如以氪（Kr）气体制成的活性物质（KR +）轰击绝缘膜（I）的表面，除去暴露在绝缘膜（I）的表面中的氟（F）原子 等离子体。 在这方面，至少从绝缘膜形成步骤直到完成除氟步骤之后，基板与水分保持脱离接触。

公开(公告)号：US20060264059A1

公开(公告)日：2006-11-23

申请号：US10568461

申请日：2004-08-12

申请人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

发明人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

摘要翻译： 本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。 本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。

公开(公告)号：US20100264115A1

公开(公告)日：2010-10-21

申请号：US12526460

申请日：2008-02-04

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： B23Q1/00 ,  H01L21/3065 ,  H05H1/24 ,  C23C16/513

CPC分类号： H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

摘要翻译： 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。