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1.发明申请公开(公告)号：US20060068583A1
公开(公告)日：2006-03-30
申请号：US10711649
申请日：2004-09-29
IPC分类号： H01L21/4763
CPC分类号： H01L21/76826 , H01L21/0212 , H01L21/02274 , H01L21/02329 , H01L21/0234 , H01L21/02343 , H01L21/31058 , H01L21/3127 , H01L21/32051 , H01L21/76814
摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.
摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。
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公开(公告)号：US07307019B2
公开(公告)日：2007-12-11
申请号：US10711649
申请日：2004-09-29
IPC分类号： H01L21/302
CPC分类号： H01L21/76826 , H01L21/0212 , H01L21/02274 , H01L21/02329 , H01L21/0234 , H01L21/02343 , H01L21/31058 , H01L21/3127 , H01L21/32051 , H01L21/76814
摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.
摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。
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3.发明申请Method for forming film, method for manufacturing semiconductor device, semiconductor device and substrate treatment system 有权薄膜形成方法，半导体装置的制造方法，半导体装置及基板处理系统公开(公告)号：US20060223306A1
公开(公告)日：2006-10-05
申请号：US10567733
申请日：2004-07-23
IPC分类号： H01L21/20 , H01L21/4763 , H01L21/36
CPC分类号： H01L21/0212 , C23C16/26 , C23C16/56 , H01L21/02274 , H01L21/0234 , H01L21/3127
摘要： A film forming method comprise the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio, defined as a ratio of a number of F atoms to a number of C atoms in the source gas molecule, wherein the F/C ratio is larger than 1 but smaller than 2.
摘要翻译： 一种成膜方法包括以下步骤：通过使用含有C和F的源气体形成F-掺杂的碳膜，并通过自由基改性F-掺杂的碳膜，源气体的F / C比定义为比率 的多个F原子与源气体分子中的多个C原子，其中F / C比大于1但小于2。
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公开(公告)号：US20060251828A1
公开(公告)日：2006-11-09
申请号：US10549859
申请日：2004-03-24
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/3244 , H01L21/0212 , H01L21/02274 , H01L21/3127
摘要： A plasma-assisted deposition system for carrying out a plasma-assisted deposition method has a processing vessel defining a vacuum chamber and having an open upper end, a dielectric member covering the open upper end of the processing vessel, and a flat antenna member placed on the upper surface of the dielectric member. A coaxial waveguide has one end connected to the upper surface of the flat antenna member and the other end connected to a microwave generator. The flat antenna member is provided with many slots of a length corresponding to half the wavelength of a microwave arranged on concentric circles. For example, a circularly polarized microwave is radiated from the slots into a processing space to produce a source gas plasma. Electron temperature in the plasma in terms of mean square velocity is 3 eV or below and the electron density in the plasma is 5×1011 electrons per cubic centimeter or above. The plasma is used for depositing a fluorine-containing carbon film. Preferably, the process pressure is 19.95 Pa or below. Under such process conditions for depositing a fluorine-containing carbon film by using the plasma, the source gas, such as C5F8 gas, is decomposed properly to form a structure of long CF chains. A interlayer insulation film thus formed has a small relative dielectric constant and permits only a low leakage current.
摘要翻译： 用于执行等离子体辅助沉积方法的等离子体辅助沉积系统具有限定真空室并具有敞开的上端的处理容器，覆盖处理容器的敞开的上端的电介质构件和放置在 电介质构件的上表面。 同轴波导的一端连接到平坦天线构件的上表面，另一端连接到微波发生器。 扁平天线构件设置有多个长度对应于布置在同心圆上的微波的一半波长的槽。 例如，圆形极化微波从狭缝辐射到处理空间中以产生源气体等离子体。 等离子体中的平均电子速度的电子温度为3eV以下，等离子体中的电子密度为每立方厘米以上5×10 11电子。 等离子体用于沉积含氟碳膜。 优选地，工艺压力为19.95Pa或更低。 在通过使用等离子体沉积含氟碳膜的这种工艺条件下，诸如C 5 F 8气体的源气体被适当地分解以形成结构 的长CF链。 这样形成的层间绝缘膜具有小的相对介电常数，并且仅允许低的漏电流。
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公开(公告)号：US08197913B2
公开(公告)日：2012-06-12
申请号：US12008770
申请日：2008-01-14
申请人： Takaaki Matsuoka , Kohei Kawamura
发明人： Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H05H1/24
CPC分类号： H01L21/3148 , C23C16/0272 , C23C16/36 , C23C16/511 , H01L21/3185 , H01L21/76822 , H01L21/76829
摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.
摘要翻译： 本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体 与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。
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6.发明申请公开(公告)号：US20100032844A1
公开(公告)日：2010-02-11
申请号：US12514173
申请日：2007-11-08
IPC分类号： H01L23/48
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
摘要翻译： 半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。 氟碳膜含氮，介电常数低，重现性好，稳定性好。
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7.发明申请AMORPHOUS CARBON FILM, SEMICONDUCTOR DEVICE, FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM 审中-公开非晶碳膜，半导体器件，膜成膜方法，成膜装置和储存介质公开(公告)号：US20100032838A1
公开(公告)日：2010-02-11
申请号：US12516862
申请日：2007-11-30
IPC分类号： H01L23/532 , H01L21/314 , C09D1/00
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02123 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/3146 , H01L21/76811 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.
摘要翻译： 本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。 由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。 因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。
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公开(公告)号：US20070243377A1
公开(公告)日：2007-10-18
申请号：US11632604
申请日：2005-07-08
申请人： Sohei Nishida , Kohei Kawamura , Toshiaki Ebisu
发明人： Sohei Nishida , Kohei Kawamura , Toshiaki Ebisu
CPC分类号： D01F6/54 , C08F220/14 , C08F220/44 , C08F220/58 , C08F228/02 , D01F6/48 , Y10T428/2913 , Y10T428/2929 , Y10T428/2931 , Y10T442/64
摘要： A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.
摘要翻译： 根据本发明的改性聚丙烯酸收缩纤维包含通过混合50至99重量份的含有40重量％至80重量％的丙烯腈，20重量％至60重量％的卤素的聚合物（A）而获得的聚合物组合物 的单体和0重量％〜5重量％的含磺酸的单体，和1〜50重量份的含有5重量％〜70重量％的丙烯腈的聚合物（B），20重量％〜94重量％ 丙烯酸酯和1重量％至40重量％的含有甲代烯丙基磺酸或其金属盐的磺酸单体或其胺盐，其中聚合物（A）和聚合物（B）的总量 ）为100重量份。 这样，得到染色后的显色性良好且染色后的收缩率高的改性聚丙烯腈系收缩性纤维。
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公开(公告)号：US20070077737A1
公开(公告)日：2007-04-05
申请号：US10580036
申请日：2004-11-19
申请人： Yasuo Kobayashi , Kohei Kawamura
发明人： Yasuo Kobayashi , Kohei Kawamura
CPC分类号： C23C16/511 , C23C16/26 , C23C16/4404 , C23C16/4405 , H01J37/32192 , H01J37/3222 , H01J37/32238 , H01J37/3244
摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
摘要翻译： 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，从气体供给构件（3）供给到处理室（1）中的C 5 C 8 C 8气体被变更（激活）为等离子体，从而 在半导体晶片（W）上形成一定厚度的含氟碳膜。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂布过程中，将C 5 F 8 N气体变成等离子体，并且含氟碳的预涂膜比含氟 形成在成膜工艺中形成的碳膜。
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10.发明申请Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开半导体器件制造工艺中的薄膜形成和成膜装置公开(公告)号：US20060068104A1
公开(公告)日：2006-03-30
申请号：US11231962
申请日：2005-09-22
申请人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
发明人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.
摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。
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