Method and device for molding wheel rim hump part
    1.
    发明授权
    Method and device for molding wheel rim hump part 有权
    用于成型轮辋隆起部分的方法和装置

    公开(公告)号:US07520056B2

    公开(公告)日:2009-04-21

    申请号:US10561791

    申请日:2004-06-22

    Abstract: A method for molding a wheel rim hump part, comprising the steps of stopping a fist claw (30) and a second claw (32) holding a work (wheel rim for vehicle) (W) at specified positions and allowing an annular support member (160) to abut on the end surface of the curl part (C1) of the work (W), closing a right side first mold (16b) to support the curl part (C1) and the outer peripheral wall surface of the work by the support mold (106) of the right side first mold (16b), also closing a left side first mold (16a) to support the curl part (C1) and the outer peripheral wall surface of the work by the support mold (106) of the left side first mold (16a), moving forward a long rod (136) to allow a roller metal mold (124) to abut on the inner peripheral wall surface of the work (W), and turning the roller metal mold (124) along the circumferential direction thereof.

    Abstract translation: 一种用于模制轮辋隆起部分的方法,包括以下步骤:在特定位置处阻止将第一爪(30)和第二爪(32)保持在工件(车轮轮辋)(W)上,并允许环形支撑构件 160)抵靠在工件(W)的卷曲部(C1)的端面上,封闭右侧的第一模具(16b),以将卷曲部(C1)和工件的外周壁面 右侧第一模具(16b)的支撑模具(106),还封闭左侧第一模具(16a),以通过支撑模具(106)支撑卷曲部分(C1)和工件的外周壁表面 左侧第一模具(16a)向前移动长杆(136),以允许辊子金属模具(124)抵靠在工件(W)的内周壁表面上,并且转动辊子金属模具(124) 沿其圆周方向。

    Method and device for molding wheel rim hump part
    2.
    发明申请
    Method and device for molding wheel rim hump part 有权
    用于成型轮辋隆起部分的方法和装置

    公开(公告)号:US20070107223A1

    公开(公告)日:2007-05-17

    申请号:US10561791

    申请日:2004-06-22

    Abstract: A method for molding a wheel rim hump part, comprising the steps of stopping a fist claw (30) and a second claw (32) holding a work (wheel rim for vehicle) (W) at specified positions and alowing an annular support member (160) to abut on the end surface of the curl part (C1) of the work (W), closing a right side first mold (16b) to support the curl part (C1) and the outer peripheral wall surface of the work by the support mold (106) of the right side first mold (16b), also closing a left side first mold (16a) to support the curl part (C1) and the outer peripheral wall surface of the work by the support mold (106) of the left side first mold (16a), moving forward a long rod (136) to allow a roller metal mold (124) to abut on the inner peripheral wall surface of the work (W), and turning the roller metal mold (124) along the circumferential direction thereof.

    Abstract translation: 一种用于模制轮缘隆起部分的方法,包括以下步骤:在特定位置处停止将第一爪(30)和第二爪(32)保持在特定位置处的工件(车轮轮缘)(W),并且使环形支撑构件 160)抵接在工件(W)的卷曲部分(C 1)的端面上,闭合右侧第一模具(16b)以支撑卷曲部分(C 1)和外周壁面 通过右侧第一模具(16b)的支撑模具(106)工作,还关闭左侧第一模具(16a)以将卷曲部分(C 1)和工件的外周壁表面 左侧第一模具(16a)的支撑模具(106)向前移动长杆(136),以允许辊子金属模具(124)邻接在工件(W)的内周壁表面上,并且转动 所述滚子金属模具沿圆周方向延伸。

    Drill
    3.
    发明授权
    Drill 有权
    钻头

    公开(公告)号:US08579557B2

    公开(公告)日:2013-11-12

    申请号:US13816895

    申请日:2012-02-06

    Abstract: [Problem] To provide a drill which enables a great reduction in cutting resistance and easy performance of a drilling operation by human power using a hand drill, a drilling machine, or the like.[Solution] A drill has two cutting edges formed symmetrically with respect to a rotation axis, and is subjected to thinning at the tip thereof. The cutting edge is configured from a thinned cutting edge (1) which extends in a shape including a curved line from a chisel edge to the outer peripheral side of the drill, and a main cutting edge (2) which extends from the end of the thinned cutting edge to the outer peripheral end of the drill when viewed from the tip side of the drill, and a thinned surface formed by the thinned cutting edge is formed into an approximately parabolic shape inclined in a drill axis direction when viewed from the front side of the drill.

    Abstract translation: [问题]提供一种使用手钻,钻孔机械等能够大幅度降低切削阻力并且容易地进行人力钻孔操作的钻头的钻头。 [解决方案]钻具具有相对于旋转轴对称形成的两个切削刃,并且在其尖端处经受变薄。 所述切削刃由从所述钻头的凿边缘到所述外周侧的弯曲线形状的延长的切削刃(1)构成,以及从所述切削刃的末端延伸的主切削刃(2) 当从钻头的尖端侧观察时,将切削刃变细到钻头的外周端,并且由前述变薄的切削刃形成的由薄板切削刃形成的变薄的表面形成为从钻头轴线方向倾斜的大致抛物线形状 的钻头。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20120193702A1

    公开(公告)日:2012-08-02

    申请号:US13361010

    申请日:2012-01-30

    Abstract: In a SiC-based MISFET and a manufacturing process thereof, after the introduction of an impurity, extremely-high-temperature activation annealing is required. Accordingly, it is difficult to frequently use a self-alignment process as performed in a silicon-based MISFET manufacturing process. This results in the problem that, to control the characteristics of a device, a high-accuracy alignment technique is indispensable. In accordance with the present invention, in a semiconductor device such as a SiC-based vertical power MISFET using a silicon-carbide-based semiconductor substrate and a manufacturing method thereof, a channel region, a source region, and a gate structure are formed in mutually self-aligned relation.

    Abstract translation: 在基于SiC的MISFET及其制造方法中,在引入杂质之后,需要极高温的活化退火。 因此,难以频繁地使用在硅系MISFET制造工序中进行的自对准工序。 这导致了为了控制装置的特性,高精度对准技术是必不可少的问题。 根据本发明,在诸如使用碳化硅基半导体衬底的基于SiC的垂直功率MISFET等半导体器件及其制造方法中,形成沟道区,源极区和栅极结构 相互自我约束的关系

    Perforated Member
    5.
    发明申请
    Perforated Member 审中-公开
    穿孔会员

    公开(公告)号:US20090145841A1

    公开(公告)日:2009-06-11

    申请号:US12083113

    申请日:2006-08-17

    Applicant: Koichi Arai

    Inventor: Koichi Arai

    Abstract: The present invention provides a perforated component having the excellent hygienic property and washable structure suitable for a filter element and a jet nozzle used particularly in food processing by employing the single material such as metal, ceramic or the like. The perforated component attains the following advantages: steps for manufacturing the perforated component can be decreases; positions where foreign particles accumulate are diminished; additional reinforcements are not required; since no welding steps are included, strains, cracks and the like hardly caused by manufacturing steps. As a result the perforated component of high precision and high quality is obtained. The perforated component is formed in the following manner. Grooves 1 are formed at desired positions in a workpiece W made out of a single material. A plurality of passage holes 2 are perforated in the grooves 1. and except the grooves 2, remaining portions functioning as strength sustaining portions 3 in the workpiece are formed as a monolithic structure

    Abstract translation: 本发明提供了一种具有优异的卫生性能和可洗涤结构的穿孔部件,其适用于通过采用单一材料如金属,陶瓷等而特别用于食品加工的过滤元件和喷嘴。 穿孔部件具有以下优点:可以减少用于制造穿孔部件的步骤; 外来颗粒积聚的位置减少; 不需要额外的增援; 由于不包括焊接步骤,不容易由制造步骤引起的应变,裂纹等。 结果,获得了高精度和高质量的穿孔部件。 穿孔部件以如下方式形成。 沟槽1形成在由单一材料制成的工件W中的期望位置处。 多个通道孔2在沟槽1中穿孔,除了沟槽2之外,在工件中用作强度维持部分3的其余部分形成为整体结构

    Retained wire filter element
    7.
    发明授权
    Retained wire filter element 失效
    保留电线滤芯

    公开(公告)号:US5047148A

    公开(公告)日:1991-09-10

    申请号:US513638

    申请日:1990-04-24

    Applicant: Koichi Arai

    Inventor: Koichi Arai

    CPC classification number: B01D29/05 Y10S29/077 Y10T29/49604

    Abstract: A filter element for filter systems, which comprises a plurality of plate members having a number of apertures therethrough and cutout grooves formed in the surface thereof, a plurality of wire members each having a retaining leg portion, which is inserted into one of the grooves of the plate member, whereby the top surfaces of the wire members are flashed in a definite plane for forming a plurality of slits for filtering a liquid.

    Abstract translation: 一种用于过滤器系统的过滤器元件,其包括多个板构件,所述多个板构件具有穿过其中的多个孔和形成在其表面中的切口槽,多个线构件,每个线构件具有保持脚部,所述多个线构件被插入到 板构件,由此,线构件的顶表面在确定的平面中闪光,以形成用于过滤液体的多个狭缝。

    Wire locking structure for a filter device

    公开(公告)号:US4569763A

    公开(公告)日:1986-02-11

    申请号:US638659

    申请日:1984-08-07

    Applicant: Koichi Arai

    Inventor: Koichi Arai

    CPC classification number: E21B43/088 B01D29/15 Y10T29/49874 Y10T403/583

    Abstract: This invention relates to a wire locking structure for a filter device, in which an outer circumference of a cylinder body is provided with a screw thread portion. The screw thread portion is wrapped by a wire of isosceles triangle in section. An end of the wire is drawn into a recess and firmly supported in a U-shape by an insert member to be inserted in the recess, thereby a conventional welding means has been removed.

    Normally-off power JFET and manufacturing method thereof
    9.
    发明授权
    Normally-off power JFET and manufacturing method thereof 有权
    常关断电源JFET及其制造方法

    公开(公告)号:US08524552B2

    公开(公告)日:2013-09-03

    申请号:US13363256

    申请日:2012-01-31

    Abstract: In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times.

    Abstract translation: 通常,在诸如基于SiC的正常关断JFET的半导体有源元件中,其中杂质扩散速度显着低于硅中的杂质扩散速度,通过离子注入形成在源区中形成的沟槽的侧壁中形成栅极区。 然而,为了确保JFET的性能,需要高精度地控制栅极区域之间的面积。 此外,存在这样的问题,由于通过在源极区域中形成栅极区域而形成重掺杂的PN结,所以不能避免结电流的增加。 本发明提供一种常闭功率JFET及其制造方法,根据多次外延法形成栅极区域,该方法重复包括外延生长,离子注入和激活退火多次的工艺。

    NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF 有权
    正常关断电源及其制造方法

    公开(公告)号:US20120193641A1

    公开(公告)日:2012-08-02

    申请号:US13363256

    申请日:2012-01-31

    Abstract: In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times.

    Abstract translation: 通常,在诸如基于SiC的正常关断JFET的半导体有源元件中,其中杂质扩散速度显着低于硅中的杂质扩散速度,通过离子注入形成在源区中形成的沟槽的侧壁中形成栅极区。 然而,为了确保JFET的性能,需要高精度地控制栅极区域之间的面积。 此外,存在这样的问题,由于通过在源极区域中形成栅极区域而形成重掺杂的PN结,所以不能避免结电流的增加。 本发明提供一种常闭功率JFET及其制造方法,根据多次外延法形成栅极区域,该方法重复包括外延生长,离子注入和激活退火多次的工艺。

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