Power converting apparatus
    4.
    发明授权
    Power converting apparatus 有权
    电力转换装置

    公开(公告)号:US09197126B2

    公开(公告)日:2015-11-24

    申请号:US13258055

    申请日:2009-04-01

    IPC分类号: H02M3/335 H02M1/42

    摘要: In a power converting apparatus which converts AC power into DC power, an inverter circuit including at least one series-connected single-phase inverter is connected in a downstream of a stage in which an AC input is rectified in series therewith. In the downstream stage of the inverter circuit, there are provided a smoothing capacitor connected via a rectifier diode and a short-circuiting switch for bypassing the smoothing capacitor. The short-circuiting switch is set to an ON state only in each of short-circuiting phase ranges of which midpoint matches each of zero-crossing phases and an output of the inverter circuit is controlled by using a current command so that a DC voltage of the smoothing capacitor follows a target voltage and an input power factor is improved.

    摘要翻译: 在将AC电力转换为DC电力的电力转换装置中,包括至少一个串联连接的单相逆变器的逆变器电路在与其串联整流的级的下游连接。 在逆变器电路的下游侧,设置有通过整流二极管连接的平滑电容器和用于旁路平滑电容器的短路开关。 短路开关仅在其中点与每个过零相位匹配的短路相位范围中的每一个中被设置为导通状态,并且通过使用电流指令来控制逆变器电路的输出,使得直流电压 平滑电容器跟随目标电压,并且改善输入功率因数。

    Inverter device and air conditioner including the same
    5.
    发明授权
    Inverter device and air conditioner including the same 有权
    变频器和空调包括相同的

    公开(公告)号:US08884560B2

    公开(公告)日:2014-11-11

    申请号:US13604892

    申请日:2012-09-06

    申请人: Norikazu Ito

    发明人: Norikazu Ito

    IPC分类号: H02P6/14

    摘要: An inverter device includes a plurality of switching circuits in which first switching elements including Si semiconductors and second switching element including WBG semiconductors having ON resistance smaller than that of the first switching elements and having switching speed higher than that of the first switching elements are connected in parallel. The inverter device includes a converting circuit that converts a direct-current voltage into a desired alternating-current voltage and a driving unit that generates a plurality of driving signals for respectively turning on and off the switching circuits. The inverter device includes, for each of the switching circuits, a gate circuit that, based on the driving signals, turns on the second switching element later than the first switching element and turns off the first switching element later than the second switching element.

    摘要翻译: 逆变器装置包括多个开关电路,其中包括Si半导体的第一开关元件和包括具有比第一开关元件的导通电阻小的开关速度的开关速度高于第一开关元件的开关速度的WBG半导体的第二开关元件连接在 平行。 逆变器装置包括将直流电压转换成期望的交流电压的转换电路和产生用于分别导通和关断开关电路的多个驱动信号的驱动单元。 对于每个开关电路,逆变器装置包括基于驱动信号的第二开关元件比第一开关元件晚的导通,并且使第一开关元件比第二开关元件晚的截止的栅极电路。

    Nitride semiconductor light emitting device
    7.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号:US08093606B2

    公开(公告)日:2012-01-10

    申请号:US12085564

    申请日:2006-11-28

    IPC分类号: H01L33/00

    摘要: There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1−xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1−yN layer (0≦y≦0.5 and y

    摘要翻译: 提供一种氮化物半导体发光器件,其具有能够防止由于有源层的质量劣化而引起的反射率降低和降低亮度的光反射层。 氮化物半导体激光器至少包括设置在设置在基板(1)上的第一光反射层(2)上的发光层形成部(3)。 第一光反射层(2)形成为具有彼此不同的折射率的低折射率层(21)和高折射率层(22),并且第一光反射层的低折射率层(21) 形成有Al x Ga 1-x N层(0& nlE; x≦̸ 1)的单层结构,并且第一光反射层的高折射率层(22)形成有多层结构,其通过交替层叠AlyGa1-yN 层(0& nlE; y≦̸ 0.5和y n1; 1和t

    Semiconductor Light-Emitting Device and Process for Producing the Same
    9.
    发明申请
    Semiconductor Light-Emitting Device and Process for Producing the Same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20090272992A1

    公开(公告)日:2009-11-05

    申请号:US12223739

    申请日:2007-02-08

    IPC分类号: H01L33/00

    摘要: A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).

    摘要翻译: 本发明的半导体发光器件包括:衬底(1),由衬底(1)支撑的n-GaN层(2),位于离衬底(1)更远的p-GaN层(7) 在n-GaN层(2)中,形成在n-GaN层(2)和p-GaN层(7)之间并含有InGaN的有源层(4),形成在该GaN衬底之间的升华防止层(5) 有源层(4)和p-GaN层(7)并且包含InGaN,以及夹在升华防止层(5)和p-GaN层(7)之间的In组成梯度层(6),并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层(7)减小的比率梯度。

    Method for forming thin film and apparatus therefor
    10.
    发明申请
    Method for forming thin film and apparatus therefor 有权
    薄膜形成方法及其设备

    公开(公告)号:US20060011231A1

    公开(公告)日:2006-01-19

    申请号:US10529904

    申请日:2003-10-03

    IPC分类号: H01L31/00

    摘要: A plurality of antenna elements, each of which has first and second linear conductors whose first ends are electrically interconnected are formed. The antenna elements are arranged in plane in such a way that the first and second linear conductors are alternated and separated from one another at regular intervals, thereby forming one or more array antennas which are disposed in a chamber. The second ends of the first linear conductors are connected to a high-frequency power supply, and the second ends of the second linear conductors are connected to ground. A plurality of substrates are parallel placed on both sides of the array antennas at distances approximate to the distances between the linear conductors. A film is formed by introducing an ingredient gas into the chamber.

    摘要翻译: 形成有多个天线元件,每个天线元件具有第一和第二线性导体,其第一端电互连。 天线元件布置在平面中,使得第一和第二线性导体以规则的间隔彼此交替和分离,从而形成设置在腔室中的一个或多个阵列天线。 第一线性导体的第二端连接到高频电源,第二线性导体的第二端连接到地。 多个基板平行地放置在阵列天线的两侧,距离线性导体之间的距离近似。 通过将成分气体引入室中形成膜。