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公开(公告)号:US4343959A
公开(公告)日:1982-08-10
申请号:US280071
申请日:1981-07-02
申请人: Koichi Kida , Yoshio Kawai , Yutaka Tamura , Yoshiharu Suzuki
发明人: Koichi Kida , Yoshio Kawai , Yutaka Tamura , Yoshiharu Suzuki
CPC分类号: B01J21/12 , C07C1/20 , C07C2521/12 , Y02P20/584
摘要: A tertiary olefin is produced by making a gaseous tertiary ether usually represented by the following general formula: ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 are alkyl groups each having 1-4 carbon atoms which may be same or different each other and R.sup.4 is an alkyl group having 1-3 carbon atoms, contact a catalyst obtained by calcining a silica-alumina compound at 700.degree.-1100.degree. C. in order to carry out cracking of the tertiary ether.
摘要翻译: 通过制备通常由以下通式表示的气态叔醚制备叔烯烃:其中R 1,R 2和R 3是各自具有1-4个碳原子的烷基,其可以相同或不同,并且R 4是 具有1-3个碳原子的烷基,在700〜1100℃下煅烧二氧化硅 - 氧化铝化合物获得的催化剂接触,以进行叔乙醚的裂化。
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公开(公告)号:US4536605A
公开(公告)日:1985-08-20
申请号:US371424
申请日:1982-04-23
申请人: Koichi Kida , Yoshio Kawai , Yutaka Tamura , Yoshiharu Suzuki
发明人: Koichi Kida , Yoshio Kawai , Yutaka Tamura , Yoshiharu Suzuki
CPC分类号: B01J21/12 , C07C1/20 , C07C2521/12
摘要: A tertiary olefin is produced by contacting a gaseous tertiary ether usually represented by the following general formula: ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 are alkyl groups each having 1-4 carbon atoms which may be same or different and R.sup.4 is an alkyl group having 1-3 carbon atoms, with a catalyst obtained by calcining a silica-alumina compound at 700.degree.-1100.degree. C. in order to effect cracking of the tertiary ether. This reaction may be carried out in the presence of steam to result in further improvements.
摘要翻译: 通过与通常由以下通式表示的气态叔醚接触来制备叔烯烃:其中R 1,R 2和R 3是可以相同或不同的1-4个碳原子的烷基,R 4是烷基 具有1-3个碳原子,与通过在700℃-1100℃煅烧二氧化硅 - 氧化铝化合物而获得的催化剂以实现叔乙醚的裂化。 该反应可以在蒸汽存在下进行,以进一步改进。
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公开(公告)号:US4255592A
公开(公告)日:1981-03-10
申请号:US79330
申请日:1979-09-27
申请人: Yoshio Kawai , Koichi Kida , Hideo Ikarashi , Tsukasa Toki , Yoshiharu Suzuki
发明人: Yoshio Kawai , Koichi Kida , Hideo Ikarashi , Tsukasa Toki , Yoshiharu Suzuki
IPC分类号: C07C67/00 , C07C407/00 , C07C409/08 , C07C179/035
CPC分类号: C07C409/08 , C07C407/00
摘要: An aromatic primary hydroperoxide is produced by oxidizing a methyl-substituted aromatic compound in a liquid phase with a molecular oxygen-containing gas at a temperature of 80.degree.-150.degree. C. under a pressure of the atmospheric to 100 kg/cm.sup.2 gage in the presence of 8-300 parts by weight of an aliphatic tertiary hydroperoxide per 100 parts by weight of the methyl-substituted aromatic compound. The oxidation reaction is promoted, an aromatic primary hydroperoxide content of the reaction products is increased, whereas by-products are reduced, and a selectivity to the aromatic primary hydroperoxide is considerably increased.
摘要翻译: 通过在大气压至100kg / cm2的压力下,在80〜150℃的温度下,用分子氧气体在液相中氧化甲基取代的芳香族化合物来制备芳族伯氢过氧化物 每100重量份甲基取代的芳族化合物存在8-300重量份脂族叔氢过氧化物。 促进氧化反应,反应产物的芳族伯氢过氧化物含量增加,而副产物减少,并且对芳族伯氢过氧化物的选择性显着增加。
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公开(公告)号:US08617800B2
公开(公告)日:2013-12-31
申请号:US12458884
申请日:2009-07-27
申请人: Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
发明人: Jun Hatakeyama , Kazuhiro Katayama , Yoshio Kawai
IPC分类号: G03F7/26
CPC分类号: H01L21/0332 , H01L21/0275 , H01L21/0337
摘要: There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
摘要翻译: 公开了一种图案化工艺,其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物,从而在基板上形成图案,图案化工艺,其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度 并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。 可以提供图案化工艺,而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。
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公开(公告)号:US08367310B2
公开(公告)日:2013-02-05
申请号:US12708196
申请日:2010-02-18
申请人: Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
发明人: Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
IPC分类号: G03F7/26
CPC分类号: G03F7/0397 , G03F7/0035 , G03F7/40
摘要: A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.
摘要翻译: 图案化工艺包括(1)涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜,曝光,曝光后烘烤和碱显影以形成第一抗蚀剂图案,(2)将抗蚀剂改性组合物施加到 第一抗蚀剂图案和加热以修饰第一抗蚀剂图案,(3)涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜,曝光,曝光后烘烤和碱显影以形成第二抗蚀剂图案。 改性的第一抗蚀剂膜与纯水的接触角为50°-85°。
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公开(公告)号:US07569323B2
公开(公告)日:2009-08-04
申请号:US11492957
申请日:2006-07-26
申请人: Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masayuki Endo , Masaru Sasago , Haruhiko Komoriya , Michitaka Ootani , Satoru Miyazawa , Kazuhiko Maeda
发明人: Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masayuki Endo , Masaru Sasago , Haruhiko Komoriya , Michitaka Ootani , Satoru Miyazawa , Kazuhiko Maeda
IPC分类号: G03F7/30
CPC分类号: G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要: A resist protective coating material is provided comprising an α-trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process, the material forms on a resist film a protective coating which is water-insoluble, dissolvable in alkaline developer and immiscible with the resist film, allowing for effective implementation of immersion lithography.
摘要翻译: 提供抗蚀剂保护涂层材料,其包含具有环状全氟烷基的α-三氟甲基丙烯酸/降冰片烯共聚物作为侧基。 在图案形成过程中,材料在抗蚀剂膜上形成保护性涂层,其是不溶于水的,可溶于碱性显影剂中并且与抗蚀剂膜不混溶,从而有效地实施浸渍光刻。
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公开(公告)号:US07125643B2
公开(公告)日:2006-10-24
申请号:US10969097
申请日:2004-10-21
申请人: Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Kazuhiro Yamanaka
发明人: Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Kazuhiro Yamanaka
CPC分类号: G03F7/0397 , C08F216/1408 , C08F220/24 , G03F7/0046 , G03F7/085 , Y10S430/108 , Y10S430/111
摘要: A polymer comprising recurring units of formula (1) and recurring units of formulae (2a) to (2d) wherein R1 is F or fluoroalkyl, R2 is a single bond or an alkylene or fluoroalkylene, R3 and R4 are H, F, alkyl or fluoroalkyl, at least one of R3 and R4 contains F, R5 is H or an acid labile group, R6 is an acid labile group, adhesive group, alkyl or fluoroalkyl, and “a” is 1 or 2 is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance.
摘要翻译: 包含式(1)的重复单元和式(2a)至(2d)的重复单元的聚合物,其中R 1是F或氟烷基,R 2是单键 或亚烷基或氟亚烷基,R 3和R 4是H,F,烷基或氟代烷基,R 3和R 3中的至少一个, SUP> 4 SUP>含有F,R 5是H或酸不稳定基团,R 6是酸不稳定基团,粘合剂基团,烷基或氟烷基,和 “a”为1或2用作基础树脂以配制抗蚀剂组合物,该抗蚀剂组合物具有波长高达200nm的辐射的高透明度,底物粘合性,显影剂亲和性和耐干蚀刻性等优点。
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公开(公告)号:US07005228B2
公开(公告)日:2006-02-28
申请号:US10178638
申请日:2002-06-25
申请人: Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人: Jun Hatakeyama , Yuji Harada , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
CPC分类号: G03F7/0397 , G03F7/0046 , G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要: A ternary copolymer comprising units of α-trifluoromethylacrylic carboxylate having acid labile groups substituted thereon, units of α-trifluoromethylacrylic carboxylate having adhesive groups substituted thereon, and units of styrene having hexafluoroalcohol pendants is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
摘要翻译: 包含其上取代有酸不稳定基团的α-三氟甲基丙烯酸羧酸酯单元的三元共聚物,其上取代有粘合剂基团的α-三氟甲基丙烯酸羧酸酯单元和具有六氟醇垂饰的苯乙烯单元对VUV辐射是高度透明的并且耐等离子体蚀刻。 使用聚合物作为基础树脂的抗蚀剂组合物对于低于200nm的高能辐射敏感,具有优异的灵敏度,并且适用于光刻微处理。
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公开(公告)号:US20060029884A1
公开(公告)日:2006-02-09
申请号:US11196450
申请日:2005-08-04
IPC分类号: G03C1/76
CPC分类号: G03F7/0046 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0397 , G03F7/2041
摘要: In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from an overlay material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the overlay material.
摘要翻译: 在浸没式光刻工艺中,通过在晶片上形成光致抗蚀剂层形成图案,在覆盖材料上在光致抗蚀剂层上形成保护涂层,将层结构暴露在水中,并显影。 使用水不溶性碱溶性材料作为覆盖材料。
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公开(公告)号:US06933095B2
公开(公告)日:2005-08-23
申请号:US10178475
申请日:2002-06-25
申请人: Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人: Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号: G03F7/032 , C08F212/14 , C08F220/04 , C08F220/22 , G03F7/004 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号: G03F7/0046 , C08F212/14 , G03F7/0392 , Y10S430/108 , Y10S430/146 , Y10S430/167
摘要: A copolymer of an acrylate monomer containing fluorine at α-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.
摘要翻译: 在α-位含氟的丙烯酸酯单体与氟化羟基苯乙烯衍生物的共聚物对VUV辐射是高度透明的并且耐等离子体蚀刻。 使用聚合物作为基础树脂的抗蚀剂组合物对于低于200nm的高能辐射敏感,具有优异的灵敏度,分辨率,透明度,基底粘附性和等离子体耐蚀刻性,并且适用于光刻微处理。
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