公开(公告)号：US20100190350A1

公开(公告)日：2010-07-29

申请号：US12692913

申请日：2010-01-25

申请人： Koichi YATSUDA ,  Yoshinobu Ooya ,  Shin Okamoto ,  Hiromasa Mochiki

发明人： Koichi YATSUDA ,  Yoshinobu Ooya ,  Shin Okamoto ,  Hiromasa Mochiki

IPC分类号： H01L21/3065

CPC分类号： H01J37/32146 ,  H01J37/32091 ,  H01J37/32697

摘要： A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.

摘要翻译： 提供了一种通过等离子体处理装置在蚀刻靶膜中形成孔的等离子体蚀刻方法。 该装置包括用于向上电极和下电极中的至少一个施加用于等离子体产生的RF功率的RF电源，以及用于向上电极施加负DC电压的DC电源。 通过接通RF电源产生等离子体的第一条件和负DC电压被施加到上电极，并且通过关闭RF电源而将等离子体熄灭的第二条件并且将负DC电压施加到上电极 交替重复。 在第一条件下，通过正离子在等离子体中进行蚀刻，并且通过DC电压将负离子供给到孔中，以在第二条件下中和孔中的正离子。

公开(公告)号：US08641916B2

公开(公告)日：2014-02-04

申请号：US12692913

申请日：2010-01-25

申请人： Koichi Yatsuda ,  Yoshinobu Ooya ,  Shin Okamoto ,  Hiromasa Mochiki

发明人： Koichi Yatsuda ,  Yoshinobu Ooya ,  Shin Okamoto ,  Hiromasa Mochiki

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32146 ,  H01J37/32091 ,  H01J37/32697

摘要： A plasma etching method for forming a hole in an etching target film by a plasma processing apparatus is provided. The apparatus includes an RF power supply for applying RF power for plasma generation to at least one of upper and lower electrodes, and a DC power supply for applying minus DC voltage to the upper electrode. A first condition that plasma is generated by turning on the RF power supply and minus DC voltage is applied to the upper electrode and a second condition that the plasma is extinguished by turning off the RF power supply and minus DC voltage is applied to the upper electrode are alternately repeated. Etching is performed by positive ions in the plasma under the first condition and negative ions are supplied into the hole by the DC voltage to neutralize positive ions in the hole under the second condition.

摘要翻译： 提供了一种通过等离子体处理装置在蚀刻靶膜中形成孔的等离子体蚀刻方法。 该装置包括用于向上电极和下电极中的至少一个施加用于等离子体产生的RF功率的RF电源，以及用于向上电极施加负DC电压的DC电源。 通过接通RF电源产生等离子体的第一条件和负DC电压被施加到上电极，并且通过关闭RF电源而将等离子体熄灭的第二条件并且将负DC电压施加到上电极 交替重复。 在第一条件下，通过正离子在等离子体中进行蚀刻，并且通过DC电压将负离子供给到孔中，以在第二条件下中和孔中的正离子。

公开(公告)号：US20100213162A1

公开(公告)日：2010-08-26

申请号：US12707957

申请日：2010-02-18

申请人： Hiromasa Mochiki ,  Yoshinobu Ooya ,  Fumio Yamazaki ,  Toshio Haga

发明人： Hiromasa Mochiki ,  Yoshinobu Ooya ,  Fumio Yamazaki ,  Toshio Haga

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32174 ,  H01J37/32027 ,  H01J37/32091 ,  H01J2237/334

摘要： There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

摘要翻译： 提供了能够通过高速电子获得充分的有机膜修饰效果的等离子体蚀刻方法。 在通过等离子体蚀刻在蚀刻靶膜中形成孔时，通过开启等离子体产生高频电力施加单元和在处理室内不产生等离子体的第二条件，在处理室内产生等离子体的第一条件 通过关闭等离子体产生高频电力应用单元交替重复。 此外，从第一直流电源施加负的直流电压，使得在第二状态的周期期间所施加的负的直流电压的绝对值大于在第一状态期间施加的负的直流电压的绝对值 条件。

公开(公告)号：US08383001B2

公开(公告)日：2013-02-26

申请号：US12707957

申请日：2010-02-18

申请人： Hiromasa Mochiki ,  Yoshinobu Ooya ,  Fumio Yamazaki ,  Toshio Haga

发明人： Hiromasa Mochiki ,  Yoshinobu Ooya ,  Fumio Yamazaki ,  Toshio Haga

IPC分类号： B44C1/22

CPC分类号： H01J37/32174 ,  H01J37/32027 ,  H01J37/32091 ,  H01J2237/334

摘要： There is provided a plasma etching method capable of achieving a sufficient organic film modifying effect by high-velocity electrons. In forming a hole in an etching target film by plasma etching, a first condition of generating plasma within a processing chamber by way of turning on a plasma-generating high frequency power application unit and a second condition of not generating the plasma within the processing chamber by way of turning off the plasma-generating high frequency power application unit are repeated alternately. Further, a negative DC voltage is applied from a first DC power supply such that an absolute value of the applied negative DC voltage during a period of the second condition is greater than an absolute value of the applied negative DC voltage during a period of the first condition.

摘要翻译： 提供了能够通过高速电子获得充分的有机膜修饰效果的等离子体蚀刻方法。 在通过等离子体蚀刻在蚀刻靶膜中形成孔时，通过开启等离子体产生高频电力施加单元和在处理室内不产生等离子体的第二条件，在处理室内产生等离子体的第一条件 通过关闭等离子体产生高频电力应用单元交替重复。 此外，从第一直流电源施加负的直流电压，使得在第二状态的周期期间所施加的负的直流电压的绝对值大于在第一状态期间施加的负的直流电压的绝对值 条件。

公开(公告)号：US08685267B2

公开(公告)日：2014-04-01

申请号：US13165951

申请日：2011-06-22

申请人： Koichi Yatsuda ,  Hiromasa Mochiki

发明人： Koichi Yatsuda ,  Hiromasa Mochiki

IPC分类号： B44C1/22

CPC分类号： H01L21/6719 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/3065

摘要： There is provided a substrate processing method capable of preventing the decrease in etching efficiency by positive ions and increasing the overall etching efficiency by using negative ions. The substrate processing method includes applying a plasma RF and a bias RF in the pattern of a pulse wave, respectively. The substrate processing method repeatedly performs the steps of: (3b) etching a substrate by positive ions in plasma by applying both the plasma RF and the bias RF; (3c) generating negative ions in a processing chamber by stopping the application of both the plasma RF and the bias RF; and (3a) attracting the negative ions to the substrate by applying the bias RF and stopping the application of the plasma RF. A duty ratio of the bias RF is set to be greater than a duty ratio of the plasma RF.

摘要翻译： 提供了一种能够防止正离子蚀刻效率降低并且通过使用负离子提高整体蚀刻效率的衬底处理方法。 基板处理方法包括分别在脉波图案中施加等离子体RF和偏压RF。 基板处理方法重复执行以下步骤：（3b）通过施加等离子体RF和偏压RF两者来蚀刻等离子体中的正离子; （3c）通过停止施加等离子体RF和偏压RF来在处理室中产生负离子; 和（3a）通过施加偏压RF并停止施加等离子体RF来吸引负离子到衬底。 偏置RF的占空比被设定为大于等离子体RF的占空比。

公开(公告)号：US20110318933A1

公开(公告)日：2011-12-29

申请号：US13165951

申请日：2011-06-22

申请人： Koichi Yatsuda ,  Hiromasa Mochiki

发明人： Koichi Yatsuda ,  Hiromasa Mochiki

IPC分类号： H01L21/3065

CPC分类号： H01L21/6719 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/3065

摘要： There is provided a substrate processing method capable of preventing the decrease in etching efficiency by positive ions and increasing the overall etching efficiency by using negative ions. The substrate processing method includes applying a plasma RF and a bias RF in the pattern of a pulse wave, respectively. The substrate processing method repeatedly performs the steps of: (3b) etching a substrate by positive ions in plasma by applying both the plasma RF and the bias RF; (3c) generating negative ions in a processing chamber by stopping the application of both the plasma RF and the bias RF; and (3a) attracting the negative ions to the substrate by applying the bias RF and stopping the application of the plasma RF. A duty ratio of the bias RF is set to be greater than a duty ratio of the plasma RF.

摘要翻译： 提供了一种能够防止正离子蚀刻效率降低并且通过使用负离子提高整体蚀刻效率的衬底处理方法。 基板处理方法包括分别在脉波图案中施加等离子体RF和偏压RF。 基板处理方法重复执行以下步骤：（3b）通过施加等离子体RF和偏压RF两者来蚀刻等离子体中的正离子; （3c）通过停止施加等离子体RF和偏压RF来在处理室中产生负离子; 和（3a）通过施加偏压RF并停止施加等离子体RF来吸引负离子到衬底。 偏置RF的占空比被设定为大于等离子体RF的占空比。

公开(公告)号：US09373521B2

公开(公告)日：2016-06-21

申请号：US12943323

申请日：2010-11-10

申请人： Hiromasa Mochiki ,  Shin Okamoto ,  Takashi Nishijima ,  Fumio Yamazaki

发明人： Hiromasa Mochiki ,  Shin Okamoto ,  Takashi Nishijima ,  Fumio Yamazaki

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/3213

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/0273 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137

摘要： An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

摘要翻译： 在包括第一和第二电源的基板处理装置中执行用于蚀刻形成有目标膜和掩模膜的基板的蚀刻处理方法，该第一和第二电源分别向处理空间提供较高和较低的高频功率， 台，以及用于向电极提供直流电力的直流电源。 该方法包括用于修改形成在掩模膜上的图案的形状的修改步骤; 以及通过使用掩模膜蚀刻目标膜的蚀刻步骤。 在修改步骤中，通过等离子体蚀刻掩模膜。 此外，在蚀刻步骤中，将直流电力施加到电极，并且将较低的高频功率以重复更高和较低功率电平的脉搏波形式施加到安装台。

公开(公告)号：US20090120582A1

公开(公告)日：2009-05-14

申请号：US12266800

申请日：2008-11-07

申请人： Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

发明人： Chishio Koshimizu ,  Kazuki Denpoh ,  Hiromasa Mochiki

IPC分类号： H01L21/3065

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.

摘要翻译： 处理气体供给单元的喷淋板，设置在基板处理装置的处理室中，以将处理气体供给到处理室中的处理空间。 喷淋板介于形成在处理气体供给单元中的处理气体导入空间，用于引入处理气体和处理空间。 淋浴板包括处理气体供给通道，其允许处理气体引入空间与处理空间通信。 处理气体供给通路包括朝向处理气体导入空间形成的气孔和朝向处理空间形成的气体槽，气体孔和气体槽相互连通。 所有气体槽的总流路横截面面积大于所有气孔的总流路横截面面积。

公开(公告)号：US20060157445A1

公开(公告)日：2006-07-20

申请号：US11333289

申请日：2006-01-18

申请人： Hiromasa Mochiki

发明人： Hiromasa Mochiki

IPC分类号： B44C1/22 ,  G01R31/00 ,  C03C25/68 ,  G01L21/30

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67253

摘要： Mixing ratio and flow rate of a first gaseous mixture supplied to a central portion of the substrate are set. Subsequently, etching is performed by changing a mixing ratio of a second gaseous mixture supplied to an outer peripheral portion of the substrate while a setting of the first gaseous mixture is fixed, thereby, setting the mixing ratio of the second gaseous mixture based on an etching result to make etching selectivities and shapes at the central portion and the outer peripheral portion of the substrate uniform. Then, etching is performed by changing a flow rate of the second gaseous mixture while settings of the first gaseous mixture and the mixing ratio of the second gaseous mixture are fixed, thereby, setting the flow rate of the second gaseous mixture based on etching results to make etching rates at the central portion and the outer peripheral portion of the substrate uniform.

摘要翻译： 设置供给到基板的中心部分的第一气体混合物的混合比和流量。 随后，通过改变在第一气体混合物的设定被固定的同时提供给基板的外周部分的第二气体混合物的混合比，从而根据蚀刻设定第二气体混合物的混合比来进行蚀刻 导致在基板的中心部分和外周部分处的蚀刻选择性和形状均匀。 然后，在第一气态混合物的设定和第二气体混合物的混合比固定的同时，通过改变第二气态混合物的流量进行蚀刻，从而将基于蚀刻结果的第二气体混合物的流量设定为 使基板的中央部分和外周部分的蚀刻速率均匀。

公开(公告)号：US07829469B2

公开(公告)日：2010-11-09

申请号：US11608889

申请日：2006-12-11

申请人： Lee Chen ,  Hiromasa Mochiki

发明人： Lee Chen ,  Hiromasa Mochiki

IPC分类号： H01L21/302

CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3233 ,  H01J37/32587

摘要： A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A ring electrode, provided about a periphery of the substrate and opposite the electron source electrode, is utilized to create a ring hollow cathode plasma to affect changes in the distribution of plasma density.

摘要翻译： 描述了用于调整和控制等离子体处理系统中的等离子体均匀性的方法和系统。 等离子体处理系统包括电子源电极，直流电（DC）功率被耦合到其中，以便在衬底的蚀刻期间产生弹道电子束。 利用设置在基板的周边并且与电子源电极相对的环形电极来产生环空心阴极等离子体，以影响等离子体密度分布的变化。