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    TUNNELING MAGNETORESISTANCE READ HEAD HAVING A COFE INTERFACE LAYER AND METHODS FOR PRODUCING THE SAME
    1.
    发明申请
    TUNNELING MAGNETORESISTANCE READ HEAD HAVING A COFE INTERFACE LAYER AND METHODS FOR PRODUCING THE SAME 有权
    带有接合层的隧道磁阻读取头及其制造方法

    公开(公告)号：US20110141613A1

    公开(公告)日：2011-06-16

    申请号：US12948072

    申请日：2010-11-17

    申请人： Koji Sakamoto ,  Koichi Nishioka

    发明人： Koji Sakamoto ,  Koichi Nishioka

    IPC分类号： G11B5/33 ,  G11B21/02 ,  B05D5/00

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49034

    摘要： According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0≦x≦15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.

    摘要翻译： 根据一个实施例，一种用于制造隧道磁阻（TMR）读头的方法包括形成固定层，在固定层上形成绝缘阻挡层，在绝缘阻挡层上方形成自由层，退火自由层， 固定层和绝缘阻挡层。 该固定层包括具有CoxFe（0＆amp; nlE; x＆nlE; 15）界面层的第一铁磁层和在CoxFe界面层和绝缘阻挡层之间的Co基非晶金属层，在第一铁磁层下面​​的反向平行耦合层，以及 位于反平行耦合层下面的第二铁磁层。 在另一个实施例中，TMR读取头包括上述层，并且可以包括在磁数据存储系统中。

    TUNNELING JUNCTION MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    TUNNELING JUNCTION MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF 有权
    隧道结电磁效应元件及其制造方法

    公开(公告)号：US20110141606A1

    公开(公告)日：2011-06-16

    申请号：US12955746

    申请日：2010-11-29

    申请人： Koichi Nishioka ,  Koji Sakamoto ,  Tatsumi Hirano

    发明人： Koichi Nishioka ,  Koji Sakamoto ,  Tatsumi Hirano

    IPC分类号： G11B15/18 ,  G11B5/39 ,  B05D5/12

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114

    摘要： According to one embodiment, a TMR effect element includes a ground layer, an antiferromagnetic layer above the ground layer, a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer, an anti-parallel coupling layer above the first ferromagnetic layer, a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer, an insulation barrier layer above the second ferromagnetic layer, and a third ferromagnetic layer above the insulation barrier layer. At least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO. Other elements, heads, and formation methods are described according to various embodiments.

    摘要翻译： 根据一个实施例，TMR效应元件包括接地层，接地层上方的反铁磁层，反铁磁层上方的第一铁磁层并与反铁磁层交换耦合，第一铁磁层上方的反平行耦合层 具有经由所述反平行耦合层反平行于所述第一铁磁层的磁矩而耦合的磁矩的第二铁磁层，所述第二铁磁层上方的绝缘阻挡层和所述绝缘阻挡层上方的第三铁磁层 。 第二铁磁层的至少一部分和绝缘阻挡层侧上的第三铁磁层的至少一部分由晶体构成，绝缘阻挡层包括MgO和具有独立立方晶体结构的氧化物材料 与MgO的固溶度。 根据各种实施例描述其它元件，头和形成方法。

    Magnetic head with wide sensor back edge, low resistance, and high signal to-noise ratio and methods of production thereof
    3.
    发明授权
    Magnetic head with wide sensor back edge, low resistance, and high signal to-noise ratio and methods of production thereof 有权
    具有传感器后端宽，电阻低，信噪比高的磁头及其制造方法

    公开(公告)号：US08339752B1

    公开(公告)日：2012-12-25

    申请号：US13245708

    申请日：2011-09-26

    申请人： Masashi Hattori ,  Koichi Nishioka ,  Koji Sakamoto ,  Tsutomu Yasuda ,  Hideki Mashima

    发明人： Masashi Hattori ,  Koichi Nishioka ,  Koji Sakamoto ,  Tsutomu Yasuda ,  Hideki Mashima

    IPC分类号： G11B5/39

    CPC分类号： H01F10/3254 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/398 ,  Y10T29/49037

    摘要： In one embodiment, a magnetic head includes a magnetoresistive free layer, wherein a width of the free layer nearest an air bearing surface (ABS) is less than a width of the free layer at a point away from the ABS in a track width direction, with the magnetic head being configured to pass a sense current in a direction perpendicular to a plane of deposition of the free layer. In another embodiment, a method includes forming a magnetoresistive film above a shield, forming a masking layer above the magnetoresistive film, patterning the masking layer such that it exposes portions of the magnetoresistive film, wherein the masking layer defines an area which is narrow near an area that forms an ABS side of a free layer and wider at an area away from the ABS, and removing the exposed portions of the magnetoresistive film to form the free layer.

    摘要翻译： 在一个实施例中，磁头包括无磁阻层，其中最接近空气支承表面（ABS）的自由层的宽度小于在轨道宽度方向上离开ABS的点处的自由层的宽度， 其中磁头被配置为在与自由层的沉积平面垂直的方向上传递感测电流。 在另一个实施例中，一种方法包括在屏蔽层之上形成磁阻膜，在磁阻膜上方形成掩模层，对掩模层进行图案化以使其暴露磁阻膜的部分，其中掩模层限定一个窄的区域 形成自由层的ABS侧并且远离ABS的区域更宽的区域，以及去除磁阻膜的暴露部分以形成自由层。

    Tunneling magnetoresistance read head having a cofe interface layer and methods for producing the same
    5.
    发明授权
    Tunneling magnetoresistance read head having a cofe interface layer and methods for producing the same 有权
    具有cofe界面层的隧道磁阻读取头及其制造方法

    公开(公告)号：US08351163B2

    公开(公告)日：2013-01-08

    申请号：US12948072

    申请日：2010-11-17

    申请人： Koji Sakamoto ,  Koichi Nishioka

    发明人： Koji Sakamoto ,  Koichi Nishioka

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49034

    摘要： According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0≦x≦15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.

    摘要翻译： 根据一个实施例，一种用于制造隧道磁阻（TMR）读头的方法包括形成固定层，在固定层上形成绝缘阻挡层，在绝缘阻挡层上方形成自由层，退火自由层， 固定层和绝缘阻挡层。 该固定层包括具有CoxFe（0＆amp; nlE; x＆nlE; 15）界面层的第一铁磁层和在CoxFe界面层和绝缘阻挡层之间的Co基非晶金属层，在第一铁磁层下面​​的反向平行耦合层，以及 位于反平行耦合层下面的第二铁磁层。 在另一个实施例中，TMR读取头包括上述层，并且可以包括在磁数据存储系统中。

    Tunneling junction magnetoresistive effect element and manufacturing method thereof
    6.
    发明授权
    Tunneling junction magnetoresistive effect element and manufacturing method thereof 有权
    隧道结磁阻效应元件及其制造方法

    公开(公告)号：US08284526B2

    公开(公告)日：2012-10-09

    申请号：US12955746

    申请日：2010-11-29

    申请人： Koichi Nishioka ,  Koji Sakamoto ,  Tatsumi Hirano

    发明人： Koichi Nishioka ,  Koji Sakamoto ,  Tatsumi Hirano

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114

    摘要： According to one embodiment, a TMR effect element includes a ground layer, an antiferromagnetic layer above the ground layer, a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer, an anti-parallel coupling layer above the first ferromagnetic layer, a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer, an insulation barrier layer above the second ferromagnetic layer, and a third ferromagnetic layer above the insulation barrier layer. At least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO. Other elements, heads, and formation methods are described according to various embodiments.

    摘要翻译： 根据一个实施例，TMR效应元件包括接地层，接地层上方的反铁磁层，反铁磁层上方的第一铁磁层并与反铁磁层交换耦合，第一铁磁层上方的反平行耦合层 具有经由所述反平行耦合层反平行于所述第一铁磁层的磁矩而耦合的磁矩的第二铁磁层，所述第二铁磁层上方的绝缘阻挡层和所述绝缘阻挡层上方的第三铁磁层 。 第二铁磁层的至少一部分和绝缘阻挡层侧上的第三铁磁层的至少一部分由晶体构成，绝缘阻挡层包括MgO和具有独立立方晶体结构的氧化物材料 与MgO的固溶度。 根据各种实施例描述其它元件，头和形成方法。

    ENHANCED ANTI-PARALLEL-PINNED SENSOR USING THIN RUTHENIUM SPACER AND HIGH MAGNETIC FIELD ANNEALING
    8.
    发明申请
    ENHANCED ANTI-PARALLEL-PINNED SENSOR USING THIN RUTHENIUM SPACER AND HIGH MAGNETIC FIELD ANNEALING 有权
    使用薄型间隔器和高磁场退火的增强型抗并联型传感器

    公开(公告)号：US20080285182A1

    公开(公告)日：2008-11-20

    申请号：US12172134

    申请日：2008-07-11

    申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

    发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/12 ,  Y10T428/1121

    摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

    摘要翻译： 反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。 反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。 间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。 间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。 该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

    Magnetic head with magnetic domain control structure having anti-ferromagnetic layer and plural magnetic layers
    9.
    发明授权
    Magnetic head with magnetic domain control structure having anti-ferromagnetic layer and plural magnetic layers 失效
    具有磁畴控制结构的磁头具有反铁磁层和多个磁性层

    公开(公告)号：US07230803B2

    公开(公告)日：2007-06-12

    申请号：US10771312

    申请日：2004-02-05

    申请人： Akira Morinaga ,  Koichi Nishioka ,  Takayoshi Ohtsu ,  Norifumi Miyamoto ,  Shuichi Kojima

    发明人： Akira Morinaga ,  Koichi Nishioka ,  Takayoshi Ohtsu ,  Norifumi Miyamoto ,  Shuichi Kojima

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A magneto-resistive effect head including: an antiferromagnetic layer; a pinned layer which is formed on the antiferromagnetic layer and whose magnetizing direction has been fixed; a spacer formed on the pinned layer; a free layer formed on the spacer; and magnetic domain control layers having antiferromagnetic flims and magnet layers for performing a magnetic domain control of the free layer; wherein the each of the antiferromagnetjc films is formed on the free layer; wherein the each of magnet layers has at least two magnetic films coupled anti-ferromagnetically through at least one nonmagnetic film; a pair of lead layers for supplying a current to the stack of layers; and wherein seed layers are formed between the antiferromagnetic films and the lead layers.

    摘要翻译： 磁阻效应头包括：反铁磁层; 形成在反铁磁层上并且其磁化方向已被固定的钉扎层; 形成在被钉扎层上的间隔物; 形成在间隔物上的自由层; 以及磁畴控制层，其具有用于对自由层进行磁畴控制的反铁磁性薄膜和磁铁层; 其中每个反铁磁膜形成在自由层上; 其中每个磁体层具有至少两个通过至少一个非磁性膜反铁磁耦合的磁膜; 一对用于向层叠层提供电流的引线层; 并且其中在反铁磁膜和引线层之间形成种子层。

    Spin-valve giant magnetoresistive head and method of manufacturing the same
    10.
    发明授权
    Spin-valve giant magnetoresistive head and method of manufacturing the same 失效
    旋转阀巨磁阻头及其制造方法

    公开(公告)号：US06717778B2

    公开(公告)日：2004-04-06

    申请号：US09931255

    申请日：2001-08-17

    申请人： Masatoshi Arasawa ,  Haruko Tanaka ,  Makoto Morijiri ,  Koichi Nishioka ,  Shuichi Kojima ,  Masayasu Kagawa

    发明人： Masatoshi Arasawa ,  Haruko Tanaka ,  Makoto Morijiri ,  Koichi Nishioka ,  Shuichi Kojima ,  Masayasu Kagawa

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.

    摘要翻译： 通过在下绝缘间隙层上层叠反铁磁层，钉扎磁性层，非磁性导电层，自由磁性层和非磁性保护层，形成梯形截面形状的多个自旋阀GMR传感器薄膜。 在将自旋阀巨磁阻层图案化成自旋阀GMR传感器的多个薄膜的过程中产生的下绝缘间隙层的蚀刻量为10nm以下。 此外，相对于自由磁性层的中间线，多个薄膜的每个侧面的切线与自由磁性层的中间线在其厚度方向上形成的角度θ成为45度以上。 这种结构使得可以提供这样的自旋阀巨磁阻头，其满足确保恒定击穿电压的要求并防止MR输出电压波形的不稳定性。