公开(公告)号：US5503708A

公开(公告)日：1996-04-02

申请号：US155858

申请日：1993-11-23

申请人： Kootaroo Koizumi ,  Sukeyoshi Tsunekawa ,  Kenichi Kawasumi ,  Takeshi Kimura ,  Keisuke Funatsu

发明人： Kootaroo Koizumi ,  Sukeyoshi Tsunekawa ,  Kenichi Kawasumi ,  Takeshi Kimura ,  Keisuke Funatsu

IPC分类号： H01L21/306 ,  G03F7/42 ,  H01L21/311 ,  H01L21/00

CPC分类号： G03F7/42 ,  H01L21/31138

摘要： An organic film removing method uses an organic film removing apparatus comprising a processing vessel defining a processing chamber, a wafer support for supporting a semiconductor wafer within the processing chamber, and a mixed gas supplier for supplying a mixed gas consisting of an alcohol or alcohols, and ozone gas or an ozone-containing gas into the processing chamber so that the mixed gas acts on an organic film pattern on the surface of the supported semiconductor wafer. The apparatus continuously supplies the mixed gas into the processing chamber at least in a period between a time immediately before mounting the semiconductor wafer on the wafer support and a time when the organic film is removed completely; conveys the semiconductor wafer into the processing chamber; supports the semiconductor wafer within the processing chamber; and heats the patterned organic film on the surface of the supported semiconductor wafer at a temperature in a range below a temperature at which substantial defects will be formed in the elements of a semiconductor device to be formed on the semiconductor wafer. This method is capable of ashing the organic film at an ashing rate equal to or higher than an ashing rate at which a known organic film removing method employing a steam-containing ozone gas ashes the organic film, and of reducing water marks as compared with the known method employing the steam-containing ozone gas.

摘要翻译： 有机膜去除方法使用有机膜去除装置，其包括限定处理室的处理容器，用于在处理室内支撑半导体晶片的晶片支撑件和用于供应由醇或醇组成的混合气体的混合气体供应器， 和臭氧气体或含臭氧气体进入处理室，使得混合气体作用在被支撑的半导体晶片的表面上的有机膜图案上。 至少在将半导体晶片安装在晶片载体上之前的时间和完全去除有机薄膜的时间之间的时间内，该装置将混合气体连续地供给到处理室中; 将半导体晶片传送到处理室中; 支撑处理室内的半导体晶片; 并且在半导体晶片的要形成的半导体器件的元件中将在形成缺陷的温度以下的温度范围内的温度下对被加热的半导体晶片的表面上的图案化有机膜进行加热。 该方法能够以等于或高于使用含有蒸汽的臭氧气体的有机薄膜去除方法灰化有机薄膜并且与其相比减少水痕的灰化速率灰化的有机薄膜灰化 已知的使用含蒸汽的臭氧气体的方法。

公开(公告)号：US5478401A

公开(公告)日：1995-12-26

申请号：US399512

申请日：1995-03-07

申请人： Sukeyoshi Tsunekawa ,  Keisuke Funatsu ,  Kenichi Kawasumi ,  Akio Inada ,  Masaro Kaku

发明人： Sukeyoshi Tsunekawa ,  Keisuke Funatsu ,  Kenichi Kawasumi ,  Akio Inada ,  Masaro Kaku

IPC分类号： B08B11/02 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/687

CPC分类号： H01L21/68735 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/6875

摘要： An apparatus and method for surface treatment of a substance to be processed, which are capable of decreasing the number of foreign matters holding on the reverse side of the substance more than prior art like apparatus and method without largely decreasing a surface treating speed as compared with that of the prior art, by supplying ozone gas to the surface of the substance mounted on a supporting base. The supporting base has a heating part and a supporting part. There is provided a supporting material on the surface of the supporting part for partly supporting one side of the substance to be processed so that a required amount of gap may be formed between the substance to be processed and the supporting part. In the heating part is built a heater. And for a member constituting the supporting part is used a material having greater emissivity than a member constituting the heating part.

摘要翻译： 一种用于表面处理待处理物质的装置和方法，其能够比现有技术类似的装置和方法更少地保留在物体的相反侧的异物数量，而不会大大降低表面处理速度，与 通过向安装在支撑基座上的物质的表面供给臭氧气体，是现有技术。 支撑基座具有加热部和支撑部。 在支撑部件的表面上设置有支撑材料，用于部分地支撑待处理物质的一侧，使得可以在待处理物质和支撑部件之间形成所需量的间隙。 在加热部分内装一个加热器。 并且对于构成支撑部件的构件使用具有比构成加热部件的构件更大的发射率的材料。

公开(公告)号：US06607988B2

公开(公告)日：2003-08-19

申请号：US09749554

申请日：2000-12-28

申请人： Takashi Yunogami ,  Yoshitaka Nakamura ,  Kazuo Nojiri ,  Sukeyoshi Tsunekawa ,  Toshiyuki Arai ,  Miwako Nakahara ,  Shigeru Ohno ,  Tomonori Saeki ,  Masaru Izawa

发明人： Takashi Yunogami ,  Yoshitaka Nakamura ,  Kazuo Nojiri ,  Sukeyoshi Tsunekawa ,  Toshiyuki Arai ,  Miwako Nakahara ,  Shigeru Ohno ,  Tomonori Saeki ,  Masaru Izawa

IPC分类号： H01L21302

CPC分类号： H01L28/65 ,  C23F4/00 ,  H01L21/32136 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/91

摘要： With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.

摘要翻译： 为了提供使用光致抗蚀剂作为蚀刻掩模对Ru（钌）进行高选择性蚀刻的技术，覆盖沉积在孔的侧壁和底表面上的下电极材料的Ru膜被覆盖 与光致抗蚀剂膜接触，然后在含有臭氧气体的气体气氛中进行各向同性的干法蚀刻，由此除去孔外部的Ru膜的一部分。

公开(公告)号：US06326218B1

公开(公告)日：2001-12-04

申请号：US09575442

申请日：2000-05-22

申请人： Takashi Yunogami ,  Kazuo Nojiri ,  Yuzuru Ohji ,  Sukeyoshi Tsunekawa ,  Masahiko Hiratani ,  Yuichi Matsui

发明人： Takashi Yunogami ,  Kazuo Nojiri ,  Yuzuru Ohji ,  Sukeyoshi Tsunekawa ,  Masahiko Hiratani ,  Yuichi Matsui

IPC分类号： H01G706

CPC分类号： H01L27/105 ,  H01L21/32139 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/60

摘要： Described is a manufacturing method of an integrated circuit which uses a thin film such as platinum or BST as a hard mask upon patterning ruthenium or the like, thereby making it possible to form a device without removing the hard mask. In addition, the invention method makes it possible to interpose a protecting film such as platinum in order to prevent, upon removing a resist used for the patterning of the hard mask, an underlying ruthenium film or the like from being damaged.

摘要翻译： 描述了在图案化钌等上使用诸如铂或BST之类的薄膜作为硬掩模的集成电路的制造方法，从而可以在不去除硬掩模的情况下形成器件。 另外，本发明的方法可以插入诸如铂的保护膜，以便在去除用于图案化硬掩模的抗蚀剂时，下面的钌膜等被损坏。

公开(公告)号：US4717462A

公开(公告)日：1988-01-05

申请号：US922892

申请日：1986-10-24

申请人： Yoshio Homma ,  Sukeyoshi Tsunekawa ,  Shunji Sasabe

发明人： Yoshio Homma ,  Sukeyoshi Tsunekawa ,  Shunji Sasabe

IPC分类号： C23C14/34 ,  C23C14/04 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/00

CPC分类号： H01J37/3408 ,  C23C14/046

摘要： A sputtering apparatus comprising an intermediate electrode having a plurality of openings disposed between a cathode and a substrate electrode.The directionality of the particles which are liberated from a target by the collision of ions against the target is made remarkably uniform by the presence of the intermediate electrode, and thus a thin film having a superior step coverage can be deposited on the substrate placed on the substrate electrode.

摘要翻译： 一种溅射装置，包括具有设置在阴极和基板电极之间的多个开口的中间电极。 通过中间电极的存在，通过离子与靶碰撞而从靶中释放的颗粒的方向性被显着地均匀化，因此具有优异的台阶覆盖率的薄膜可以沉积在放置在基板上的基板上 基板电极。

公开(公告)号：US06821446B2

公开(公告)日：2004-11-23

申请号：US09944410

申请日：2001-09-04

申请人： Kunio Harada ,  Masao Kamahori ,  Hideki Kambara ,  Sumio Yamaguchi ,  Sukeyoshi Tsunekawa

发明人： Kunio Harada ,  Masao Kamahori ,  Hideki Kambara ,  Sumio Yamaguchi ,  Sukeyoshi Tsunekawa

IPC分类号： C03C1500

CPC分类号： C03C17/005 ,  C03C17/32 ,  C03C2218/328 ,  G01N27/44704 ,  Y10T428/131 ,  Y10T428/1321 ,  Y10T428/26 ,  Y10T428/2933 ,  Y10T428/2964 ,  Y10T428/2973 ,  Y10T428/2975 ,  Y10T428/2976 ,  Y10T428/31623

摘要： The present invention provides a method for producing a high-quality capillary tube used in an electrophoresis apparatus in a safe and inexpensive manner. A polymer coating on a capillary tube is converted into gas and removed through an oxidative reaction with oxygen radicals resulting from ozone decomposition.

摘要翻译： 本发明提供一种以安全且廉价的方式生产用于电泳装置的高品质毛细管的方法。 将毛细管上的聚合物涂层转化为气体，并通过氧化反应除去臭氧分解产生的氧自由基。

公开(公告)号：US5747387A

公开(公告)日：1998-05-05

申请号：US519399

申请日：1995-08-25

申请人： Koutarou Koizumi ,  Sukeyoshi Tsunekawa ,  Kazuhiko Kawai ,  Maki Shimoda ,  Katsuhiko Itoh ,  Haruo Itoh ,  Akio Saito

发明人： Koutarou Koizumi ,  Sukeyoshi Tsunekawa ,  Kazuhiko Kawai ,  Maki Shimoda ,  Katsuhiko Itoh ,  Haruo Itoh ,  Akio Saito

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/02043 ,  G03F7/42 ,  H01L21/31138 ,  Y10S438/906

摘要： According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.

摘要翻译： 根据本发明，在通过含臭氧气体或含臭氧气体和紫外线的离子注入改变了质量的抗蚀剂灰化后，样品的表面立即被清洗，或者样品是 在灰化后不用暴露于大气中，用水清洗，从而使残留物数减少到+ E，fra 1/100 + EE，减少溶液清洗过程中的负荷，减少半导体器件的生产成本，改善 半导体器件的生产率。

公开(公告)号：US4792842A

公开(公告)日：1988-12-20

申请号：US129393

申请日：1987-11-24

申请人： Yoshio Honma ,  Sukeyoshi Tsunekawa ,  Natsuki Yokoyama ,  Hiroshi Morisaki

发明人： Yoshio Honma ,  Sukeyoshi Tsunekawa ,  Natsuki Yokoyama ,  Hiroshi Morisaki

IPC分类号： H01L23/522 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/48

CPC分类号： H01L23/485 ,  H01L21/76877 ,  H01L21/76886 ,  H01L2924/0002

摘要： Disclosed is a semiconductor device and method for manufacturing the same, which is provided with a first wiring layer whose thickness within a contact hole is great in a lower portion of the contact hole and is small in an upper portion thereof. Since the first wiring layer at the lower portion of the contact hole is sufficiently thick, reaction between a second wiring layer formed on the first wiring layer and a substrate is effectively prevented. The first wiring layer is formed by bias sputtering in which a bias voltage is applied to the substrate.

摘要翻译： 公开了一种半导体器件及其制造方法，其具有第一布线层，其第一布线层的接触孔的厚度在接触孔的下部较大，上部较小。 由于接触孔下部的第一布线层足够厚，因此有效地防止了形成在第一布线层上的第二布线层与基板之间的反应。 第一布线层通过偏置溅射形成，其中偏置电压被施加到基板。

公开(公告)号：US07419577B2

公开(公告)日：2008-09-02

申请号：US10687614

申请日：2003-10-20

申请人： Kunio Harada ,  Masao Kamahori ,  Hideki Kambara ,  Sumio Yamaguchi ,  Sukeyoshi Tsunekawa

发明人： Kunio Harada ,  Masao Kamahori ,  Hideki Kambara ,  Sumio Yamaguchi ,  Sukeyoshi Tsunekawa

IPC分类号： G01N27/453

CPC分类号： C03C17/005 ,  C03C17/32 ,  C03C2218/328 ,  G01N27/44704 ,  Y10T428/131 ,  Y10T428/1321 ,  Y10T428/26 ,  Y10T428/2933 ,  Y10T428/2964 ,  Y10T428/2973 ,  Y10T428/2975 ,  Y10T428/2976 ,  Y10T428/31623

摘要： The present invention provides a method for producing a high-quality capillary tube used in an electrophoresis apparatus in a safe and inexpensive manner. A polymer coating on a capillary tube is converted into gas and removed through an oxidative reaction with oxygen radicals resulting from ozone decomposition.

摘要翻译： 本发明提供一种以安全且廉价的方式生产用于电泳装置的高品质毛细管的方法。 将毛细管上的聚合物涂层转化为气体，并通过氧化反应除去臭氧分解产生的氧自由基。

公开(公告)号：US07264677B2

公开(公告)日：2007-09-04

申请号：US11252786

申请日：2005-10-19

申请人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

发明人： Miwako Nakahara ,  Toshiyuki Arai ,  Shigeru Ohno ,  Takashi Yunogami ,  Sukeyoshi Tsunekawa ,  Kazuto Watanabe

IPC分类号： C23G1/00

CPC分类号： C23G5/00 ,  C23C16/4405 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/32136 ,  H01L28/65 ,  Y10S438/905

摘要： Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

摘要翻译： 钌，锇及其氧化物可以通过向金属及其氧化物之间的金属及其氧化物之间的催化提供原子供氧气体（通常为臭氧），并且通过臭氧对晶片和反应器没有任何损害来简单而快速地进行蚀刻 并且催化剂不仅用于蚀刻而且还用于室清洁，确保反应堆的稳定运行和高品质装置的生产。