公开(公告)号：US5602414A

公开(公告)日：1997-02-11

申请号：US260791

申请日：1994-06-16

申请人： Kotaro Mitsui ,  Zenpei Kawazu ,  Kazuo Mizuguchi ,  Seiji Ochi ,  Yuji Ohkura ,  Norio Hayafuji ,  Hirotaka Kizuki ,  Mari Tsugami ,  Akihiro Takami ,  Manabu Katoh

发明人： Kotaro Mitsui ,  Zenpei Kawazu ,  Kazuo Mizuguchi ,  Seiji Ochi ,  Yuji Ohkura ,  Norio Hayafuji ,  Hirotaka Kizuki ,  Mari Tsugami ,  Akihiro Takami ,  Manabu Katoh

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H01L31/00

CPC分类号： H01L27/14649

摘要： In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.

摘要翻译： 在红外线检测器的制造方法中，首先，在半导体基板的正面形成有与第一导电型相反的多个第二导电类型的间隔开的CdHgTe区域的第一导电型CdHgTe层， 在第一导电型CdHgTe层的表面产生，并且第二导电型CdHgTe区域之间的第一导电类型CdHgTe层的表面的一部分被带电粒子束选择性地照射，以从该部分蒸发Hg原子，由此CdHgTe 产生具有比第一导电型CdHgTe层的Cd组分大的第一导电类型的分离区，穿过第一导电型CdHgTe层并围绕每个第二导电型CdHgTe区。 因此，实现了在像素之间没有串扰的高度集成的高分辨率红外检测器。

公开(公告)号：US6134961A

公开(公告)日：2000-10-24

申请号：US339107

申请日：1999-06-24

申请人： Hiroshi Touge ,  Manabu Katoh ,  Shinichi Harada

发明人： Hiroshi Touge ,  Manabu Katoh ,  Shinichi Harada

IPC分类号： G01C19/56 ,  G01C19/5726 ,  G01C19/5747 ,  G01P9/00

CPC分类号： G01C19/5719

摘要： An angular velocity sensor includes coupling beams supported afloat by highly flexible support beams so as to be movable relative to a substrate, with the support beams being flexible in the x-axis and a y-axis directions and being symmetrical with respect to the center of the sensor. A first vibrator and a second vibrator are supported by respective coupling beams through spring beams that are highly flexible in the x-direction, with the spring beams being symmetrical with respect to the x-axis passing through the center symmetrical to each other with respect to the y-axis passing through the center. Drive electrodes drive at least one of the first vibrator and the second vibrator to vibrate in the x-direction. First displacement detection electrodes detect a y-directional vibration of the first vibrator and second displacement detection electrodes detect a y-directional vibration of the second vibrator. Precision with respect to detecting the angular velocity is prevented from being lowered by electrical and mechanical disturbances.

摘要翻译： 角速度传感器包括由高度柔性的支撑梁支撑的耦合梁，以便相对于基板可移动，其中支撑梁在x轴和y轴方向上是柔性的，并且相对于 传感器。 第一振动器和第二振动器由相应的耦合梁支撑，弹簧梁在x方向上具有高度柔性，弹簧梁相对于通过相对于彼此对称的中心的x轴对称 y轴穿过中心。 驱动电极驱动第一振动器和第二振动器中的至少一个振动器沿x方向振动。 第一位移检测电极检测第一振动器的y方向振动，第二位移检测电极检测第二振动器的y方向振动。 通过电和机械扰动防止了检测角速度的精度降低。

公开(公告)号：US5793067A

公开(公告)日：1998-08-11

申请号：US675968

申请日：1996-07-05

申请人： Takeshi Miura ,  Teruyuki Shimura ,  Manabu Katoh

发明人： Takeshi Miura ,  Teruyuki Shimura ,  Manabu Katoh

IPC分类号： H01L23/495 ,  H01L25/07 ,  H01L31/0328

CPC分类号： H01L23/49562 ,  H01L23/49568 ,  H01L25/072 ,  H01L2924/0002

摘要： An electrode lead of a transistor extends beyond other electrode leads of the transistor, is disposed adjacent to the corresponding electrode, and is disposed outside the other electrode leads for heat radiation. A wider part of the electrode lead may have a via hole or a thick metal plating for heat radiation. Further, the electrode is preferably grounded and is connected to an external input terminal to which heat is transferred.

摘要翻译： 晶体管的电极引线延伸超过晶体管的其他电极引线，与相应的电极相邻设置，并且设置在另一个电极引线外部用于散热。 电极引线的较宽部分可以具有用于热辐射的通孔或厚金属电镀。 此外，电极优选地接地并且连接到热传递到的外部输入端子。

公开(公告)号：US5864169A

公开(公告)日：1999-01-26

申请号：US503952

申请日：1995-07-19

申请人： Teruyuki Shimura ,  Masayuki Sakai ,  Ryo Hattori ,  Hiroshi Matsuoka ,  Manabu Katoh

发明人： Teruyuki Shimura ,  Masayuki Sakai ,  Ryo Hattori ,  Hiroshi Matsuoka ,  Manabu Katoh

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8222 ,  H01L23/367 ,  H01L23/48 ,  H01L23/522 ,  H01L23/538 ,  H01L27/082 ,  H01L31/0328 ,  H01L23/34

CPC分类号： H01L23/5381 ,  H01L21/76898 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/481 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/48455 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/30107

摘要： A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; a semiconductor element disposed on the front surface of the semiconductor substrate and including an electrode; a PHS for dissipating heat generated in the semiconductor element, the PHS including a metal layer and disposed on the rear surface of the semiconductor substrate; a via-hole including a through-hole penetrating through the semiconductor substrate from the front surface to the rear surface and having an inner surface, and a metal disposed in the through-hole and contacting the PHS; and an air-bridge wiring including a metal film and having first and second portions, the air-bridge contacting the electrode of the semiconductor element at the first portion and contacting the metal of the via-hole at the second portion. Therefore, heat produced in the semiconductor element is transferred to the PHS not only through the semiconductor substrate just under the element but also through the air-bridge wiring and the via-hole, whereby the heat dissipating property of the device is significantly improved.

摘要翻译： 半导体器件包括具有相对的前表面和后表面的半导体衬底; 半导体元件，设置在所述半导体基板的前表面上并且包括电极; 用于散发在半导体元件中产生的热的PHS，PHS包括金属层并设置在半导体衬底的后表面上; 通孔，该通孔包括从前表面到后表面穿过半导体衬底的通孔，并具有内表面，以及设置在通孔中并与PHS接触的金属; 以及包括金属膜并具有第一和第二部分的空气桥接布线，所述空气桥接在所述第一部分处与所述半导体元件的电极接触并且在所述第二部分与所述通孔的金属接触。 因此，半导体元件中产生的热量不仅通过刚好在元件下方的半导体衬底传递到PHS，而且还通过气桥布线和通孔传递到PHS，从而显着提高了器件的散热性能。

公开(公告)号：US5719530A

公开(公告)日：1998-02-17

申请号：US634966

申请日：1996-04-19

申请人： Teruyuki Shimura ,  Manabu Katoh

发明人： Teruyuki Shimura ,  Manabu Katoh

IPC分类号： H01L21/331 ,  H01L23/66 ,  H01L29/73 ,  H03F3/60 ,  H03F3/68

CPC分类号： H01L23/66 ,  H01L29/73 ,  H01L2223/6644 ,  H01L2924/0002

摘要： A high power bipolar transistor includes bipolar transistors disposed on a substrate; a signal line including a pad for inputting a driving signal and a signal transmission line continuous with the pad commonly connecting base electrodes of the bipolar transistors; and a bypass line having a first end connected to the signal transmission line proximate to the pad and a second end connected to the signal transmission line remote from the pad. Approximately equal powers are supplied to the transistors connected to any position on the base feed line so that the operation of the respective transistors is uniform, improving output power and efficiency.

摘要翻译： 高功率双极晶体管包括设置在基板上的双极晶体管; 信号线，包括用于输入驱动信号的焊盘和与通常连接双极晶体管的基极的焊盘连续的信号传输线; 以及旁路管线，其具有连接到靠近焊盘的信号传输线的第一端和连接到远离焊盘的信号传输线的第二端。 大约相等的功率被提供给连接到基极馈电线上的任何位置的晶体管，使得各个晶体管的工作是均匀的，从而提高输出功率和效率。