Light emitting diode having electrode extensions for current spreading
    2.
    发明授权
    Light emitting diode having electrode extensions for current spreading 有权
    具有用于电流扩展的电极延伸的发光二极管

    公开(公告)号:US08680559B2

    公开(公告)日:2014-03-25

    申请号:US12941536

    申请日:2010-11-08

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01L33/20

    摘要: An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

    摘要翻译: 本发明的一个示例性实施例公开了一种发光二极管,其包括具有彼此相对的第一边缘和第二边缘的基板,设置在基板上的发光结构,所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘,布置在第一边缘附近的第一电极焊盘,布置在第二半导体层上的多个第二电极焊盘,布置在第二半导体层上的第二电极焊盘 在第二边缘附近,多个第一延伸部,每个第一延伸部从第一电极焊盘延伸,以及多个第二延伸部,每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分,其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外,第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分,其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

    Light emitting diode and method of fabricating the same
    3.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号:US08628983B2

    公开(公告)日:2014-01-14

    申请号:US13368122

    申请日:2012-02-07

    IPC分类号: H01L21/00

    摘要: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

    摘要翻译: 这里公开了一种发光二极管。 发光二极管包括支撑衬底,形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层,有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长,并且支撑衬底与牺牲衬底是均匀的。

    Light emitting diode having electrode pads
    4.
    发明授权
    Light emitting diode having electrode pads 有权
    具有电极焊盘的发光二极管

    公开(公告)号:US08309971B2

    公开(公告)日:2012-11-13

    申请号:US12974917

    申请日:2010-12-21

    摘要: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

    摘要翻译: 本发明的示例性实施例涉及包括基板,布置在基板上的第一导电类型半导体层,布置在第一导电类型半导体层上的第二导电类型半导体层,设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层,电连接到第一导电类型半导体层的第一电极焊盘,布置在第二导电类型半导体层上的第二电极焊盘,设置在第二导电类型半导体层和第二电极之间的绝缘层 垫,以及电连接到第二电极焊盘的至少一个上延伸部,所述至少一个上延伸部电连接到第二导电型半导体层。

    Light emitting device having plurality of light emitting cells and method of fabricating the same
    5.
    发明授权
    Light emitting device having plurality of light emitting cells and method of fabricating the same 有权
    具有多个发光单元的发光器件及其制造方法

    公开(公告)号:US08232571B2

    公开(公告)日:2012-07-31

    申请号:US12623968

    申请日:2009-11-23

    申请人: Won Cheol Seo

    发明人: Won Cheol Seo

    IPC分类号: H01L33/00

    摘要: Disclosed are a light emitting device having a plurality of light emitting cells and a method of fabricating the same. The light emitting device comprises a plurality of light emitting cells positioned on a substrate to be spaced apart from one another. Each of the light emitting cells comprises a first conductive-type upper semiconductor layer, an active layer and a second conductive-type lower semiconductor layer. Electrodes are positioned between the substrate and the light emitting cells, and each of the electrodes has an extension extending toward adjacent one of the light emitting cells. An etching prevention layer is positioned in regions between the light emitting cells and between the electrodes. Each wire has one end connected to the upper semiconductor layer and the other end connected to the electrode through the etching prevention layer.

    摘要翻译: 公开了具有多个发光单元的发光器件及其制造方法。 发光器件包括位于衬底上以彼此间隔开的多个发光单元。 每个发光单元包括第一导电型上半导体层,有源层和第二导电型下半导体层。 电极位于基板和发光单元之间,并且每个电极具有向相邻的一个发光单元延伸的延伸。 防蚀层位于发光单元之间和电极之间的区域中。 每根导线的一端连接到上半导体层,另一端通过防蚀层与电极连接。

    LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 有权
    具有发光细胞的多重性的发光装置及其制造方法

    公开(公告)号:US20110297972A1

    公开(公告)日:2011-12-08

    申请号:US13202210

    申请日:2010-03-24

    IPC分类号: H01L33/62

    摘要: A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.

    摘要翻译: 公开了一种具有多个发光单元的发光器件。 发光器件包括衬底; 位于所述基板上的多个发光单元彼此间隔开,每个所述发光单元包括p型下半导体层,有源层和n型上半导体层; p电极被定位成在衬底和发光单元之间彼此间隔开,各个p电极电连接到相应的下半导体层,每个p电极具有延伸到相邻的一个 发光单元; 设置在各个发光单元的上表面上的n电极,其中与每个发光单元电接触的每个n电极的接触表面存在于将所述发光单元平分在所述发光单元的中心的任何直线的两侧 发光单元的上表面; 用于覆盖所述发光单元的侧面的侧绝缘层; 以及用于连接p电极和n电极的电线,电线通过侧绝缘层与发光单元的侧面间隔开。

    Light emitting device and method for fabricating the same
    7.
    发明授权
    Light emitting device and method for fabricating the same 有权
    发光元件及其制造方法

    公开(公告)号:US07982234B2

    公开(公告)日:2011-07-19

    申请号:US12498168

    申请日:2009-07-06

    IPC分类号: H01L29/72

    摘要: There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.

    摘要翻译: 提供一种发光器件,其包括包括第一导电半导体层,有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板,其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

    Substrate assembly for crystal growth and fabricating method for light emitting device using the same
    9.
    发明授权
    Substrate assembly for crystal growth and fabricating method for light emitting device using the same 有权
    用于晶体生长的基板组件及使用其的发光器件的制造方法

    公开(公告)号:US08912551B2

    公开(公告)日:2014-12-16

    申请号:US13640943

    申请日:2011-04-07

    IPC分类号: H01L33/48 H01L33/00

    CPC分类号: H01L33/0079 Y10T428/24942

    摘要: A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.

    摘要翻译: 公开了一种其上形成有第一导电型半导体层,有源层和第二导电型半导体层的衬底组件,该衬底组件包括第一衬底,第二衬底和介于其间的结合层。 在基板组件中,接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

    Patterned substrate for light emitting diode and light emitting diode employing the same
    10.
    发明授权
    Patterned substrate for light emitting diode and light emitting diode employing the same 有权
    用于发光二极管的图案衬底和采用其的发光二极管

    公开(公告)号:US08614458B2

    公开(公告)日:2013-12-24

    申请号:US12090050

    申请日:2006-11-28

    IPC分类号: H01L33/00

    摘要: Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

    摘要翻译: 本文公开了用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外,凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此,突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失,从而提高光提取效率。