公开(公告)号：US20240355667A1

公开(公告)日：2024-10-24

申请号：US18758576

申请日：2024-06-28

Applicant: LAM RESEARCH CORPORATION

Inventor： Haoquan YAN ,  Robert Griffith O'NEILL ,  Raphael CASAES ,  Jon MCCHESNEY ,  Alex PATERSON

IPC: H01L21/687 ,  H01J37/02 ,  H01J37/20 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/68742 ,  H01J37/023 ,  H01J37/20 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

公开(公告)号：US20240379375A1

公开(公告)日：2024-11-14

申请号：US18683501

申请日：2022-09-01

Applicant: Lam Research Corporation

Inventor： Xiaofeng SU ,  Priyadarsini SUBRAMANIAN ,  Zhongkui TAN ,  Yoshie KIMURA ,  Haoquan YAN ,  Denis Andreievich SYOMIN ,  Jing LI ,  Yijun CHEN

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/033

Abstract: A method for etching features in a carbon containing layer below a mask is provided. A simultaneous etch and passivation step is provided comprising flowing an etch gas comprising a boron containing passivant gas and an oxygen containing gas. A plasma is created from the etch gas, wherein the plasma etches features in the carbon containing layer.

公开(公告)号：US20230317437A1

公开(公告)日：2023-10-05

申请号：US18329791

申请日：2023-06-06

Applicant: Lam Research Corporation

Inventor： John Stephen DREWERY ,  Tom A. KAMP ,  Haoquan YAN ,  John Edward DAUGHERTY ,  Ali Sucipto TAN ,  Ming-Kuei TSENG ,  Bruce Edmund FREEMAN

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44

CPC classification number: H01J37/32862 ,  H01J37/32834 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/0228 ,  H01L21/67069 ,  C23C16/0236 ,  C23C16/45544 ,  C23C16/4405 ,  H01J37/32449 ,  H01L21/02164 ,  H01J2237/3341 ,  H01J2237/3321 ,  H01J2237/186 ,  H01J2237/1825 ,  H01L21/6833

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US20210257195A1

公开(公告)日：2021-08-19

申请号：US17302622

申请日：2021-05-07

Applicant: Lam Research Corporation

Inventor： John Stephen DREWERY ,  Tom A. KAMP ,  Haoquan YAN ,  John Edward DAUGHERTY ,  Ali Sucipto TAN ,  Ming-Kuei TSENG ,  Bruce FREEMAN

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US20190013232A1

公开(公告)日：2019-01-10

申请号：US16131822

申请日：2018-09-14

Applicant: LAM RESEARCH CORPORATION

Inventor： Haoquan YAN ,  Robert Griffith O'NEILL ,  Raphael CASAES ,  Jon MCCHESNEY ,  Alex PATERSON

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/02 ,  H01L21/67 ,  H01J37/20

Abstract: An edge ring is configured to be raised and lowered relative to a pedestal, via one or more lift pins, in a processing chamber of a substrate processing system. The edge ring includes an upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and at least one feature arranged in the lower surface of the edge ring. At least one inner surface of the at least one feature is sloped.