公开(公告)号：US20240355667A1

公开(公告)日：2024-10-24

申请号：US18758576

申请日：2024-06-28

Applicant: LAM RESEARCH CORPORATION

Inventor： Haoquan YAN ,  Robert Griffith O'NEILL ,  Raphael CASAES ,  Jon MCCHESNEY ,  Alex PATERSON

IPC: H01L21/687 ,  H01J37/02 ,  H01J37/20 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/68742 ,  H01J37/023 ,  H01J37/20 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

公开(公告)号：US20160225584A1

公开(公告)日：2016-08-04

申请号：US15092149

申请日：2016-04-06

Applicant: Lam Research Corporation

Inventor： Maolin LONG ,  Alex PATERSON

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32165 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

Abstract: A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.

Abstract translation: 一种用于产生等离子体以处理晶片的等离子体处理系统。 等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。 室结构包括室壁和电介质构件。 电介质构件包括顶部，垂直壁和凸缘。 顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。 顶部线圈组设置在顶部上方。 侧面线圈组围绕垂直壁。 垂直壁的垂直内表面被配置为暴露于等离子体。 垂直壁的内径小于室壁的内径。

公开(公告)号：US20170032931A1

公开(公告)日：2017-02-02

申请号：US15291468

申请日：2016-10-12

Applicant: LAM RESEARCH CORPORATION

Inventor： Tom KAMP ,  Arthur H. SATO ,  Alex PATERSON

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A gas plenum arrangement for a substrate processing system includes a gas plenum body arranged to define a gas plenum between a coil and a processing chamber. The coil is arranged outside of an outer edge of the gas plenum body. A plurality of flux attenuating portions is arranged outside of the outer edge of the gas plenum body. The flux attenuation portions overlap the coil.

Abstract translation: 用于衬底处理系统的气体增压室装置包括设置成在线圈和处理室之间限定气体增压室的气体增压室。 线圈布置在气室的外边缘的外侧。 多个通量衰减部分设置在气体增压室的外边缘的外侧。 磁通衰减部分与线圈重叠。

公开(公告)号：US20190013232A1

公开(公告)日：2019-01-10

申请号：US16131822

申请日：2018-09-14

Applicant: LAM RESEARCH CORPORATION

Inventor： Haoquan YAN ,  Robert Griffith O'NEILL ,  Raphael CASAES ,  Jon MCCHESNEY ,  Alex PATERSON

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/02 ,  H01L21/67 ,  H01J37/20

Abstract: An edge ring is configured to be raised and lowered relative to a pedestal, via one or more lift pins, in a processing chamber of a substrate processing system. The edge ring includes an upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and at least one feature arranged in the lower surface of the edge ring. At least one inner surface of the at least one feature is sloped.

公开(公告)号：US20150318147A1

公开(公告)日：2015-11-05

申请号：US14800850

申请日：2015-07-16

Applicant: Lam Research Corporation

Inventor： Michael KANG ,  Alex PATERSON ,  Ian J. KENWORTHY

IPC: H01J37/32 ,  H01L21/67 ,  B05D1/00

CPC classification number: H01L21/30604 ,  B05B1/185 ,  B05D1/62 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/505 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/3244 ,  H01J2237/3341 ,  H01L21/30655 ,  H01L21/67069

Abstract: A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The upper plate can include eight radially extending gas passages evenly spaced around the periphery of the upper plate and the lower plate can include inner and outer rows of gas holes. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber. A gas delivery system delivers process gas to a plenum between the upper and lower plates having a gas volume of no greater than 500 cm3. The gas holes in the lower plate extend between the plenum and a plasma exposed yttria coated surface of the lower plate. The gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber such that the etching gas in the plenum can be replaced with the deposition gas within about 200 milliseconds and vice versa.

Abstract translation: 两件式陶瓷喷头包括将处理气体输送到电感耦合等离子体处理室的上板和下板。 上板覆盖在下板上，并且包括从上板的外周向内延伸的径向延伸的气体通道，与径向延伸的气体通道流体连通的轴向延伸的气体通道和在上部和下部之间形成增压室的环形凹槽 盘子 下板包括与增压室流体连通的轴向延伸的气孔。 上板可包括围绕上板周边均匀分布的八个径向延伸的气体通道，下板可包括内排和外排气孔。 两件式陶瓷喷头形成室的电介质窗口，通过天线产生的射频能量耦合到腔室中。 气体输送系统将处理气体输送到具有不大于500cm 3的气体体积的上板和下板之间的增压室。 下板中的气孔在气室和下板​​的等离子体暴露的氧化钇涂层表面之间延伸。 气体输送系统可操作以将蚀刻气体和沉积气体供应到处理室中，使得气室中的蚀刻气体可以在大约200毫秒内被沉积气体代替，反之亦然。