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公开(公告)号：US09831395B2
公开(公告)日：2017-11-28
申请号：US14978741
申请日：2015-12-22
Applicant: LG INNOTEK CO., LTD.
Inventor： Baek Jun Kim , Hiroshi Kodaira , Ki Man Kang , Ha Na Kim , Hyun Don Song , Jung Woo Lee , Jung Hun Oh
CPC classification number: H01L33/486 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/16195 , H01L2924/16315 , H01L2933/0058 , H01L2924/00014
Abstract: A light emitting device includes a body having a cavity and a step difference structure around the cavity, a plurality of electrodes in the cavity, a light emitting chip in the cavity, a transparent window having an outer portion provided on the step difference structure to cover the cavity, and an adhesive member between the transparent window and the body. The adhesive member includes a first adhesive member between an outer bottom surface of the transparent window and a bottom of the step difference structure and a second adhesive member between the outer portion of the transparent window and the body.
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2.发明授权公开(公告)号：US09673368B2
公开(公告)日：2017-06-06
申请号：US15150161
申请日：2016-05-09
Applicant: LG INNOTEK CO., LTD.
Inventor： Hyun Don Song , Ki Man Kang , Seung Hwan Kim , Sung Won David Roh , Jin Wook Lee , Eun Ju Hong , Yee Rang Hong
IPC: H01L27/15 , H01L31/12 , H01L33/00 , H01L33/62 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/48 , H01L33/46 , H01L33/60 , H01L33/64
CPC classification number: H01L33/62 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/46 , H01L33/48 , H01L33/486 , H01L33/60 , H01L33/641 , H01L33/644 , H01L33/647 , H01L2933/0016
Abstract: A light emitting device having an enhanced surface property and an electrical property is provided. The light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode disposed on one side of the light emitting structure and electrically connected to the first semiconductor layer, a second electrode disposed on one side of the light emitting structure and electrically connected to the second semiconductor layer, and an ohmic contact including a first layer disposed between the second electrode and the second semiconductor layer and having aluminum (Al), a second layer including at least one MxAly alloy formed by a reaction with Al included in the first layer, and a third layer disposed on the second layer and having gold (Au) is provided.
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公开(公告)号：US09595639B2
公开(公告)日：2017-03-14
申请号：US14299583
申请日：2014-06-09
Applicant: LG INNOTEK CO., LTD.
Inventor： Hyun Don Song
CPC classification number: H01L33/40 , H01L24/14 , H01L25/167 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/12041 , H01L2924/181 , H01L2924/00
Abstract: A light emitting device includes a light emitting structure provided over a first substrate and including at least a first conductive semiconductor layer; an active layer and a second conductive semiconductor layer. A first electrode is provided over the first conductive semiconductor layer; and a second electrode is provided over the second conductive semiconductor layer. A MIM (metal-insulator-metal) structure is provided over at least one of the first and second electrodes.
Abstract translation: 发光器件包括设置在第一衬底上并包括至少第一导电半导体层的发光结构; 有源层和第二导电半导体层。 第一电极设置在第一导电半导体层上; 并且第二电极设置在第二导电半导体层上。 在第一和第二电极中的至少一个上提供MIM（金属 - 绝缘体 - 金属）结构。
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公开(公告)号：US20150091037A1
公开(公告)日：2015-04-02
申请号：US14504522
申请日：2014-10-02
Applicant: LG INNOTEK CO., LTD.
Inventor： Sung Ho JUNG , Yoon Joon Sung , Hyun Don Song
CPC classification number: H01L33/58 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2224/48091 , H01L2924/00014
Abstract: A light emitting device includes a semiconductor structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A plurality of lower refractive layers is provided on an outer surface of the semiconductor structure layer. The lower refractive layers includes a first lower refractive layer having a first refractive index lower than a refractive index of the semiconductor structure layer on a surface of the semiconductor structure layer, and a second lower refractive layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive layer. The second refractive index of the second lower refractive layer is 1.5 or less, and the second lower refractive layer is provided on an outer surface thereof with a plurality of protrusions. The second lower refractive layer includes a plurality of metallic oxide powders.
Abstract translation: 发光器件包括半导体结构层，其包括第一导电半导体层，第一导电半导体层上的有源层和有源层上的第二导电半导体层。 多个下折射层设置在半导体结构层的外表面上。 低折射层包括具有低于半导体结构层的表面上的半导体结构层的折射率的第一折射率的第一下折射层和具有低于第一折射率的第二折射率的第二下折射层 折射率在第一低折射层的外表面上。 第二下折射层的第二折射率为1.5以下，第二下折射层在其外表面上设置有多个突起。 第二下折射层包括多个金属氧化物粉末。
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5.发明授权Light emitting device, light emitting device package and lighting system including the same 有权发光装置，发光装置封装和包括其的照明系统公开(公告)号：US09343640B2
公开(公告)日：2016-05-17
申请号：US14535122
申请日：2014-11-06
Applicant: LG Innotek Co., Ltd.
Inventor： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
CPC classification number: H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
Abstract translation: 描述了包括第二导电类型半导体层的发光器件; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。 此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。
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Patent Agency Ranking
公开(公告)号：US10541351B2
公开(公告)日：2020-01-21
申请号：US16068557
申请日：2017-01-06
Applicant: LG INNOTEK CO., LTD.
Inventor： Hyun Don Song
Abstract: A light emitting device according to embodiments includes a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a submount disposed to face the substrate, first and second metal pads disposed on the submount to be spaced apart from each other, a first bump disposed on the first metal pad, a plurality of second bumps disposed on the second metal pad to be spaced apart from each other, a first ohmic layer interposed between the first conductive semiconductor layer and the first bump, a second ohmic layer interposed between the second conductive semiconductor layer and the plurality of second bumps, a first spreading layer interposed between the first ohmic layer and the first bump, a second spreading layer interposed between the second ohmic layer and the plurality of second bumps, and a current blocking layer disposed in a maximum heating area of the second ohmic layer overlapping an area between the plurality of second bumps in a thickness direction of the light emitting structure such that the current blocking layer does not cut the second ohmic layer in a horizontal direction intersecting the thickness direction.
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公开(公告)号：US10475960B2
公开(公告)日：2019-11-12
申请号：US15764112
申请日：2016-09-30
Applicant: LG INNOTEK CO., LTD.
Inventor： Sung Dal Jung , Hyun Don Song , Ki Man Kang , Seung Hwan Kim , Jong Sub Lee
IPC: H01L33/32 , H01L33/00 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/36 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/50 , H01L33/62 , H01L33/60
Abstract: Disclosed in an embodiment is a light emitting device comprising: a substrate; a light emitting structure, which includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first groove penetrating through the second semiconductor layer and the active layer and disposed up until a partial region of the first semiconductor layer; a reflective electrode layer covering a lower part of the second semiconductor layer and a sidewalls of the first groove; a first ohmic electrode disposed inside the first groove and electrically connected to the first semiconductor layer; and a first insulation layer for electrically insulating the first ohmic electrode and the reflective electrode layer.
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公开(公告)号：US09543485B2
公开(公告)日：2017-01-10
申请号：US14504522
申请日：2014-10-02
Applicant: LG INNOTEK CO., LTD.
Inventor： Sung Ho Jung , Youn Joon Sung , Hyun Don Song
CPC classification number: H01L33/58 , H01L33/22 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2224/48091 , H01L2924/00014
Abstract: A light emitting device includes a semiconductor structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A plurality of lower refractive layers is provided on an outer surface of the semiconductor structure layer. The lower refractive layers includes a first lower refractive layer having a first refractive index lower than a refractive index of the semiconductor structure layer on a surface of the semiconductor structure layer, and a second lower refractive layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive layer. The second refractive index of the second lower refractive layer is 1.5 or less, and the second lower refractive layer is provided on an outer surface thereof with a plurality of protrusions. The second lower refractive layer includes a plurality of metallic oxide powders.
Abstract translation: 发光器件包括半导体结构层，其包括第一导电半导体层，第一导电半导体层上的有源层和有源层上的第二导电半导体层。 多个下折射层设置在半导体结构层的外表面上。 低折射层包括具有低于半导体结构层的表面上的半导体结构层的折射率的第一折射率的第一下折射层和具有低于第一折射率的第二折射率的第二下折射层 折射率在第一低折射层的外表面上。 第二下折射层的第二折射率为1.5以下，第二下折射层在其外表面上设置有多个突起。 第二下折射层包括多个金属氧化物粉末。
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9.发明授权Light emitting device, light emitting device package and lighting system including the same 有权发光装置，发光装置封装和包括其的照明系统公开(公告)号：US08907363B2
公开(公告)日：2014-12-09
申请号：US13963877
申请日：2013-08-09
Applicant: LG Innotek Co., Ltd.
Inventor： Sung Min Hwang , Hyun Don Song , Hyun Kyong Cho
CPC classification number: H01L33/60 , H01L33/0033 , H01L33/145 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/48 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
Abstract translation: 描述了包括第二导电类型半导体层的发光器件; 在所述第二导电类型半导体层上方的有源层; 在有源层上的第一导电类型半导体层; 在第二导电类型半导体层下面的第一区域中的第二电极; 包括金属的电流阻挡层; 以及位于第一导电类型半导体层上的第一电极。 此外，第一电极具有与电流阻挡层垂直重叠的至少一个部分。
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公开(公告)号：US10553756B2
公开(公告)日：2020-02-04
申请号：US15764961
申请日：2016-09-30
Applicant: LG INNOTEK CO., LTD.
Inventor： Jong Sub Lee , Hyun Don Song , Ki Man Kang , Seung Hwan Kim , Sung Dal Jung
Abstract: An embodiment of the present invention includes: a gallium nitride substrate; and a light-emitting structure disposed on the other surface of the substrate, wherein the substrate includes a plurality of light extraction structures formed on one surface thereof, the thickness of the substrate is 80 μm or more, and the average height of the plurality of light extraction structures is 10 μm or more.
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