公开(公告)号：US09537056B2

公开(公告)日：2017-01-03

申请号：US14250039

申请日：2014-04-10

Applicant: LG INNOTEK CO., LTD.

Inventor： Jung Hyeok Bae ,  Young Kyu Jeong ,  Kyung Wook Park ,  Duk Hyun Park

IPC: H01L27/15 ,  H01L33/40 ,  C23C4/08 ,  H05H1/42 ,  H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  H01L21/683 ,  H01L23/00 ,  H01L21/033 ,  H01L25/065 ,  H01L25/07

CPC classification number: H01L33/405 ,  C23C4/08 ,  C23C4/134 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/0331 ,  H01L21/2855 ,  H01L21/6835 ,  H01L21/76877 ,  H01L21/76885 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/074 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/27418 ,  H01L2224/27622 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/181 ,  H05H1/42 ,  H05K2203/1344 ,  H01L2924/00 ,  H01L2224/27 ,  H01L2924/0105

Abstract: Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

Abstract translation: 提供了一种发光装置。 在一个实施例中，发光装置包括：支撑构件; 所述发光结构在所述第一导电型半导体层和所述第二导电型半导体层之间包括第一导电型半导体层，第二导电型半导体层和有源层; 保护构件，位于支撑构件的上表面的周边区域; 包括在第一导电类型半导体层上的上部的电极，从上部延伸并位于发光结构的侧表面的侧部，以及从侧部延伸并位于保护构件上的延伸部 ; 以及在发光结构的侧表面和电极之间的绝缘层。

公开(公告)号：US09076947B2

公开(公告)日：2015-07-07

申请号：US14230715

申请日：2014-03-31

Applicant: LG INNOTEK CO., LTD.

Inventor： Jung Hyeok Bae ,  Young Kyu Jeong ,  Kyung Wook Park ,  Duk Hyun Park

IPC: H01L33/62 ,  H01L33/64

CPC classification number: H01L33/62 ,  H01L33/641 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member.

Abstract translation: 提供了一种发光装置。 发光器件包括：在一个实施例中，发光器件包括：发光结构，包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层 型半导体层; 以及在发光结构下方的导电支撑构件。 导电支撑构件包括第一导电支撑构件和第二导电支撑构件。 第二导电支撑构件的导热率高于第一导电支撑构件的导热性。

公开(公告)号：US09865778B2

公开(公告)日：2018-01-09

申请号：US15301166

申请日：2015-04-02

Applicant: LG INNOTEK CO., LTD.

Inventor： Woong Sun Yum ,  Ji Hyun Koo ,  Hyun Ju Kim ,  Kyung Wook Park ,  Sung Ho Choo

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/38 ,  H01L33/22 ,  H01L33/62 ,  H01L33/32

CPC classification number: H01L33/405 ,  H01L33/0008 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light-emitting device discloses a light emitting structure layer including an active layer between first and second conductive semiconductor layers, a first electrode electrically connected to the first conductive semiconductor layer, a contact layer disposed under the second conductive semiconductor layer, a reflective layer disposed under the contact layer, a capping layer disposed under the reflective layer, and a conductive supporting member disposed under the capping layer. The reflective layer comprises a thickness that is greater than the thickness of the second conductive semiconductor layer and 90 or more times greater than the thickness of the contact layer.