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公开(公告)号：US20190237623A1
公开(公告)日：2019-08-01
申请号：US16331015
申请日：2017-09-11
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG , Min Sung KIM , Eun Dk LEE
CPC classification number: H01L33/38 , H01L33/00 , H01L33/10 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/48 , H01L33/62 , H01S5/227
Abstract: An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.
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公开(公告)号：US20190157504A1
公开(公告)日：2019-05-23
申请号：US16308594
申请日：2017-06-09
Applicant: LG INNOTEK CO., LTD.
Inventor： Su IK PARK , Youn Joon SUNG , Yong Gyeong LEE , Min Sung KIM
Abstract: One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower part of the second recess and coming into contact with the second electrode.
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公开(公告)号：US20180226541A1
公开(公告)日：2018-08-09
申请号：US15749730
申请日：2016-07-29
Applicant: LG INNOTEK CO., LTD.
Inventor： Yong Gyeong LEE , Min Sung KIM , Su Ik PARK , Youn Joon SUNG , Kwang Yong CHOI
Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.
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公开(公告)号：US20190181300A1
公开(公告)日：2019-06-13
申请号：US16310340
申请日：2017-06-20
Applicant: LG INNOTEK CO., LTD.
Inventor： Su Ik PARK , Youn Joon SUNG , Min Sung KIM , Yong Gyeong LEE , Eun Dk LEE
Abstract: An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.
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公开(公告)号：US20210151627A1
公开(公告)日：2021-05-20
申请号：US17045297
申请日：2019-04-05
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG , Min Sung KIM
IPC: H01L33/38
Abstract: An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a second electrode pad which are spaced apart from each other, and the area ratio of the electrode pad to the second conductive layer is 1:20 to 1:27.
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Patent Agency Ranking
公开(公告)号：US20190280158A1
公开(公告)日：2019-09-12
申请号：US16463766
申请日：2017-11-24
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG , Yong Gyeong LEE , Min Sung KIM , Su Ik PARK
Abstract: An embodiment discloses a semiconductor element comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer arranged between the second conducive semiconductor layer and the active layer, wherein the section of the first conductive semiconductor layer decreases in a first direction, the electron blocking layer has an area in which the section thereof increases in the first direction, and the first direction is defined from the first conductive semiconductor layer to the second conductive semiconductor layer.
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公开(公告)号：US20180219133A1
公开(公告)日：2018-08-02
申请号：US15754639
申请日：2016-08-25
Applicant: LG INNOTEK CO., LTD.
Inventor： Su Ik PARK , Min Sung KIM , Youn Joon SUNG , Yong Gyeong LEE , Kwang Yong CHOI
CPC classification number: H01L33/405 , H01L33/10 , H01L33/26 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60
Abstract: Embodiments disclose a light-emitting device including a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess and a second recess passing through the second conductive semiconductor layer and the active layer and disposed up to a partial region of the first conductive semiconductor layer, a connection electrode disposed inside the first recess and electrically connected to the first conductive semiconductor layer, a reflective layer disposed inside the second recess, and an insulation layer configured to electrically insulate the reflective layer and the light-emitting structure, and a light-emitting device package including the same.
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公开(公告)号：US20190305184A1
公开(公告)日：2019-10-03
申请号：US16444528
申请日：2019-06-18
Applicant: LG INNOTEK CO., LTD.
Inventor： Yong Gyeong LEE , Min Sung KIM , Su Ik PARK , Youn Joon SUNG , Kwang Yong CHOI
Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the plurality of p-type conductors in the first direction.
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公开(公告)号：US20190088822A1
公开(公告)日：2019-03-21
申请号：US16083710
申请日：2017-03-08
Applicant: LG INNOTEK CO., LTD.
Inventor： Kwang Yong CHOI , Min Sung KIM , Su Ik PARK , Youn Joon SUNG , Yong Gyeong LEE
Abstract: An embodiment of the present invention relates to a light emitting device capable of enhancing ohmic characteristics of a semiconductor layer and an electrode and simultaneously improving driving voltage, comprising: a support substrate; a light emitting structure which is disposed on the support substrate and comprises a first semiconductor layer, a second semiconductor layer and an active layer disposed between the first semiconductor layer and the second semiconductor layer; at least one groove which exposes the first semiconductor layer through the second semiconductor layer and the active layer; a first electrode which is disposed between the light emitting structure and the support substrate and electrically connected to the exposed first semiconductor layer; a second electrode which comprises ITO and contacts the second semiconductor layer; and a capping layer which is electrically connected, between the first electrode and the light emitting structure, to the second electrode, wherein the capping layer comprises a first layer, which is disposed facing the second semiconductor layer, with the second electrode interposed therebetween and comprises a material having a thermal expansion coefficient different from the thermal expansion coefficient of the second semiconductor layer by 3 or less.
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公开(公告)号：US20180226542A1
公开(公告)日：2018-08-09
申请号：US15749069
申请日：2016-08-25
Applicant: LG INNOTEK CO., LTD.
Inventor： Su Ik PARK , Min Sung KIM , Youn Joon SUNG , Yong Gyeong LEE , Kwang Yong CHOI
CPC classification number: H01L33/382 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/26 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/486 , H01L33/62
Abstract: An embodiment relates to a light-emitting device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses passing through the second conductive semiconductor layer and active layer and disposed on a part of an area of the first conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer inside the plurality of first recesses; a conductive support substrate which is electrically connected to the first electrode; a second electrode which is electrically connected to the second conductive semiconductor layer; and an insulating layer which is disposed between the conductive support substrate and second conductive semiconductor layer, wherein a second recess passes through the first conductive semiconductor layer, second conductive semiconductor layer and active layer and is disposed on a part of an area of the insulating layer.
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