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公开(公告)号：US20210036190A1
公开(公告)日：2021-02-04
申请号：US16981762
申请日：2019-03-22
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG , Min Sung KIM
Abstract: Disclosed in an embodiment is a semiconductor device comprising: a semiconductor structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second electrode electrically connected to the second conductive type semiconductor layer; and a reflective layer disposed under the second electrode, wherein the second conductive type semiconductor layer comprises a first sub-layer and a second sub-layer disposed between the first sub-layer and the active layer and having an aluminum (Al) composition higher than that of the first sub-layer, the reflective layer comes into contact with the lower surface of the second sub-layer, and the second electrode comes into contact with the first sub-layer.
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公开(公告)号：US20200013925A1
公开(公告)日：2020-01-09
申请号：US16479065
申请日：2018-01-19
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG , Min Sung KIM
Abstract: Disclosed is in the embodiment is a semiconductor device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the second conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer includes a first sub semiconductor layer, a third sub semiconductor layer and a second sub semiconductor layer disposed between the first sub semiconductor layer and the third sub semiconductor layer, wherein proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer is larger than an proportion of aluminum in the active layer, and an proportion of aluminum in the second sub semiconductor layer is smaller than the proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer, wherein the second conductive semiconductor layer includes a current injection layer of which proportion of aluminum decreases as a distance from the active layer increases, the first electrode is disposed on the second sub semiconductor layer, the second electrode is disposed on the current injection layer, and the ratio of the average value of the proportion of aluminum in the second sub semiconductor layer to the average value of the proportion of aluminum in the current injection layer is 1:0.12 to 1:1.6.
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公开(公告)号：US20190259910A1
公开(公告)日：2019-08-22
申请号：US16347010
申请日：2017-11-03
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG , Ki Man KANG , Min Sung KIM , Su lk PARK , Yong Gyeong LEE , Eun Dk LEE , Hyun Soo LIM
Abstract: Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.
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公开(公告)号：US20180083165A1
公开(公告)日：2018-03-22
申请号：US15563737
申请日：2016-03-31
Applicant: LG INNOTEK CO., LTD.
Inventor： Woo Sik LIM , Min Sung KIM , Eun Woo RO , Su Ik PARK , Youn Joon SUNG , Kwang Yong CHOI
CPC classification number: H01L33/382 , G02B6/0053 , G02B6/0055 , G02B6/0088 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/44 , H01L33/505 , H01L33/60 , H01L33/62 , H01L33/647 , H01L2933/0016 , H01L2933/0066
Abstract: An embodiment relates to a light-emitting element that easily dissipates heat through a pad and has a uniform heat distribution, the light-emitting element including a light-emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode that is formed on one side of the light-emitting structure and includes a plurality of contact parts electrically connected with the first semiconductor layer; a second electrode formed on the one side of the light-emitting structure and electrically connected with the second semiconductor layer; a first pad connected with the first electrode; and a second pad spaced apart from the first pad and connected with the second electrode, wherein the plurality of contact parts are arranged on the first and second pads.
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公开(公告)号：US20190237623A1
公开(公告)日：2019-08-01
申请号：US16331015
申请日：2017-09-11
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG , Min Sung KIM , Eun Dk LEE
CPC classification number: H01L33/38 , H01L33/00 , H01L33/10 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/48 , H01L33/62 , H01S5/227
Abstract: An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.
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Patent Agency Ranking
公开(公告)号：US20190157504A1
公开(公告)日：2019-05-23
申请号：US16308594
申请日：2017-06-09
Applicant: LG INNOTEK CO., LTD.
Inventor： Su IK PARK , Youn Joon SUNG , Yong Gyeong LEE , Min Sung KIM
Abstract: One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower part of the second recess and coming into contact with the second electrode.
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公开(公告)号：US20180226541A1
公开(公告)日：2018-08-09
申请号：US15749730
申请日：2016-07-29
Applicant: LG INNOTEK CO., LTD.
Inventor： Yong Gyeong LEE , Min Sung KIM , Su Ik PARK , Youn Joon SUNG , Kwang Yong CHOI
Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.
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公开(公告)号：US20180182920A1
公开(公告)日：2018-06-28
申请号：US15736263
申请日：2016-07-04
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG
CPC classification number: H01L33/24 , H01L33/007 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2933/0025
Abstract: An embodiment provides a light emitting element comprising: a first conductive semiconductor layer including a first layer and a second layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a first electrode and a second electrode arranged on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first layer includes a plurality of first grooves, and a growth prevention layer is arranged on the bottom surface and side surfaces of each of the first grooves.
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公开(公告)号：US20150123158A1
公开(公告)日：2015-05-07
申请号：US14505910
申请日：2014-10-03
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG , Sung Hoon JUNG
CPC classification number: H01L33/10 , H01L33/007 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
Abstract: A light emitting device includes a substrate, a light extraction layer provided over the substrate and a light emitting structure provided over the light extraction layer. The light extraction layer has a refraction index higher than a refraction index of the substrate and lower than a refraction index of the light emitting structure. The light extraction layer has a first region contacting the substrate and a second region provided opposite to the first region. The first region has a greater cross-sectional area than a cross-sectional area of the second region.
Abstract translation: 发光器件包括衬底，设置在衬底上的光提取层和设置在光提取层上的发光结构。 光提取层具有比基板的折射率高的折射率，并且低于发光结构的折射率。 光提取层具有与基板接触的第一区域和与第一区域相对设置的第二区域。 第一区域具有比第二区域的横截面面积更大的横截面面积。
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公开(公告)号：US20200052174A1
公开(公告)日：2020-02-13
申请号：US16536512
申请日：2019-08-09
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon SUNG
Abstract: Disclosed in an embodiment is a semiconductor device including a light-emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a recess passing through the second conductive semiconductor layer, the active layer, and a portion of the first conductive semiconductor layer, a conductive layer electrically connected to the second conductive semiconductor layer, and a bonding pad disposed to be spaced apart from the light-emitting structure, wherein the active layer is divided into an inactive region and an active region by the recess, the conductive layer is electrically connected to the active region, and the conductive layer includes a stepped portion overlapping the recess in a vertical direction.
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