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    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE INCLUDING SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE INCLUDING SAME 审中-公开

    公开(公告)号：US20190259910A1

    公开(公告)日：2019-08-22

    申请号：US16347010

    申请日：2017-11-03

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Youn Joon SUNG ,  Ki Man KANG ,  Min Sung KIM ,  Su lk PARK ,  Yong Gyeong LEE ,  Eun Dk LEE ,  Hyun Soo LIM

    IPC: H01L33/10 ,  H01L33/36 ,  H01L33/32 ,  H01L33/62

    Abstract: Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190237623A1

    公开(公告)日：2019-08-01

    申请号：US16331015

    申请日：2017-09-11

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Youn Joon SUNG ,  Min Sung KIM ,  Eun Dk LEE

    IPC: H01L33/38 ,  H01L33/32 ,  H01L33/12

    CPC classification number: H01L33/38 ,  H01L33/00 ,  H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/48 ,  H01L33/62 ,  H01S5/227

    Abstract: An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.

    SEMICONDUCTOR DEVICE PACKAGE
    3.
    发明申请
    SEMICONDUCTOR DEVICE PACKAGE 有权

    公开(公告)号：US20210043577A1

    公开(公告)日：2021-02-11

    申请号：US16979734

    申请日：2019-04-05

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Ki Man KANG ,  Eun Dk LEE

    IPC: H01L23/538 ,  H01L25/075 ,  H01L33/62

    Abstract: Disclosed in an embodiment is a semiconductor device package comprising a substrate and a plurality of semiconductor structures arranged to be spaced apart at the center of the substrate, wherein the semiconductor structure is arranged on the substrate and includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the ratio of the maximum height of the outermost surface of the first conductive type semiconductor layer to the length of the spacing distance between the adjacent semiconductor structures is 1:3 to 1:60.

    LIGHT EMITTING DEVICE PACKAGE
    6.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE 有权
    发光装置包装

    公开(公告)号：US20130146841A1

    公开(公告)日：2013-06-13

    申请号：US13711056

    申请日：2012-12-11

    Applicant: LG Innotek Co., Ltd.

    Inventor： Hyeong Seon YUN ,  Eun Dk LEE

    IPC: H01L33/04

    CPC classification number: H01L33/04 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/16 ,  H01L33/486 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

    Abstract: A light emitting device package includes a body having a cavity, at least one insulating layer disposed on the body, first and second electrode layers disposed on the insulating layer and electrically isolated from each other, at least one light emitting device disposed on a bottom surface of the cavity and electrically connected to the first and second electrode layer, a light-transmissive resin layer sealing the light emitting device disposed in the cavity, and a metal layer disposed on a rear surface of the body to face the light emitting device, wherein the light emitting device is grown in an m-direction on the (1123) plane of a substrate and includes a light emitting structure including a first conductive semiconductor layer, and active layer, and a second conductive semiconductor layer.

    Abstract translation: 发光器件封装包括具有空腔的本体，设置在主体上的至少一个绝缘层，设置在绝缘层上并彼此电隔离的第一和第二电极层，设置在底表面上的至少一个发光器件 并且电连接到第一和第二电极层，密封设置在空腔中的发光器件的透光树脂层和设置在本体的后表面上以面对发光器件的金属层，其中 发光器件在衬底的（1123）面上的m方向上生长，并且包括包括第一导电半导体层和有源层的发光结构和第二导电半导体层。

    SEMICONDUCTOR DEVICE AND HEAD LAMP COMPRISING SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND HEAD LAMP COMPRISING SAME 审中-公开

    公开(公告)号：US20200251626A1

    公开(公告)日：2020-08-06

    申请号：US16641771

    申请日：2018-08-31

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  KI Man KANG ,  Do Yub KIM ,  Eun Dk LEE

    IPC: H01L33/50 ,  H01L33/62 ,  H01L33/44 ,  H01L33/38 ,  F21S41/19 ,  H01L33/58 ,  H01L33/00 ,  H01L27/15 ,  F21S41/153

    Abstract: Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 μm to 40 μm and the thickness of the wavelength conversion layer is 1 μm to 50 μm.

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190181300A1

    公开(公告)日：2019-06-13

    申请号：US16310340

    申请日：2017-06-20

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Su Ik PARK ,  Youn Joon SUNG ,  Min Sung KIM ,  Yong Gyeong LEE ,  Eun Dk LEE

    IPC: H01L33/38 ,  H01L33/40 ,  H01L33/32

    Abstract: An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.

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