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1.发明申请METHODS OF EVAPORATING METAL ONTO A SEMICONDUCTOR WAFER IN A TEST WAFER HOLDER 有权将金属蒸发到测试保持架中的半导体波形的方法公开(公告)号：US20120083118A1
公开(公告)日：2012-04-05
申请号：US13179382
申请日：2011-07-08
申请人： Lam T. Luu , Shiban K. Tiku , Richard S. Bingle , Jens A. Riege , Heather L. Knoedler , Daniel C. Weaver
发明人： Lam T. Luu , Shiban K. Tiku , Richard S. Bingle , Jens A. Riege , Heather L. Knoedler , Daniel C. Weaver
IPC分类号： H01L21/28
CPC分类号： C23C14/545 , C23C14/505 , C23C14/546 , H01L21/67253 , H01L21/68714 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： Apparatus and methods for evaporating metal onto semiconductor wafers are disclosed. One such apparatus can include an evaporation chamber that includes a wafer holder, such as a dome, and a test wafer holder that is separate and spaced apart from the wafer holder. In certain implementations, the test wafer can be coupled to a cross beam supporting at least one shaper. A metal can be evaporated onto production wafers positioned in the wafer holder while metal is evaporated on a test wafer positioned in a test wafer holder. In some instances, the production wafers can be GaAs wafers. The test wafer can be used to make a quality assessment about the production wafers.
摘要翻译： 公开了将金属蒸发到半导体晶片上的装置和方法。 一种这样的设备可以包括蒸发室，其包括晶片保持器，例如圆顶，以及与晶片保持器分离并间隔开的测试晶片保持器。 在某些实施方案中，测试晶片可以耦合到支撑至少一个整形器的横梁。 金属可以被蒸发到位于晶片保持器中的生产晶片上，同时金属在位于测试晶片保持器中的测试晶片上蒸发。 在某些情况下，生产晶片可以是GaAs晶片。 测试晶片可用于对生产晶圆进行质量评估。
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2.发明授权Methods of evaporating metal onto a semiconductor wafer in a test wafer holder 有权在测试晶片保持器中将金属蒸发到半导体晶片上的方法公开(公告)号：US08481344B2
公开(公告)日：2013-07-09
申请号：US13179382
申请日：2011-07-08
申请人： Lam T. Luu , Shiban K. Tiku , Richard S. Bingle , Jens A. Riege , Heather L. Knoedler , Daniel C. Weaver
发明人： Lam T. Luu , Shiban K. Tiku , Richard S. Bingle , Jens A. Riege , Heather L. Knoedler , Daniel C. Weaver
IPC分类号： H01L21/687 , C23C14/54
CPC分类号： C23C14/545 , C23C14/505 , C23C14/546 , H01L21/67253 , H01L21/68714 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： Apparatus and methods for evaporating metal onto semiconductor wafers are disclosed. One such apparatus can include an evaporation chamber that includes a wafer holder, such as a dome, and a test wafer holder that is separate and spaced apart from the wafer holder. In certain implementations, the test wafer can be coupled to a cross beam supporting at least one shaper. A metal can be evaporated onto production wafers positioned in the wafer holder while metal is evaporated on a test wafer positioned in a test wafer holder. In some instances, the production wafers can be GaAs wafers. The test wafer can be used to make a quality assessment about the production wafers.
摘要翻译： 公开了将金属蒸发到半导体晶片上的装置和方法。 一种这样的设备可以包括蒸发室，其包括晶片保持器，例如圆顶，以及与晶片保持器分离并间隔开的测试晶片保持器。 在某些实施方案中，测试晶片可以耦合到支撑至少一个整形器的横梁。 金属可以被蒸发到位于晶片保持器中的生产晶片上，同时金属在位于测试晶片保持器中的测试晶片上蒸发。 在某些情况下，生产晶片可以是GaAs晶片。 测试晶片可用于对生产晶圆进行质量评估。
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公开(公告)号：US08022448B1
公开(公告)日：2011-09-20
申请号：US12898632
申请日：2010-10-05
申请人： Lam T. Luu , Shiban K. Tiku , Richard S. Bingle , Jens A. Riege , Heather L. Knoedler , Daniel C. Weaver
发明人： Lam T. Luu , Shiban K. Tiku , Richard S. Bingle , Jens A. Riege , Heather L. Knoedler , Daniel C. Weaver
IPC分类号： H01L29/76
CPC分类号： C23C14/545 , C23C14/505 , C23C14/546 , H01L21/67253 , H01L21/68714 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： Apparatus and methods for evaporating metal onto semiconductor wafers are disclosed. One such apparatus can include an evaporation chamber that includes a wafer holder, such as a dome, and a test wafer holder that is separate and spaced apart from the wafer holder. In certain implementations, the test wafer can be coupled to a cross beam supporting at least one shaper. A metal can be evaporated onto production wafers positioned in the wafer holder while metal is evaporated on a test wafer positioned in a test wafer holder. In some instances, the production wafers can be GaAs wafers. The test wafer can be used to make a quality assessment about the production wafers.
摘要翻译： 公开了将金属蒸发到半导体晶片上的装置和方法。 一种这样的设备可以包括蒸发室，其包括晶片保持器，例如圆顶，以及与晶片保持器分离并间隔开的测试晶片保持器。 在某些实施方案中，测试晶片可以耦合到支撑至少一个整形器的横梁。 金属可以被蒸发到位于晶片保持器中的生产晶片上，同时金属在位于测试晶片保持器中的测试晶片上蒸发。 在某些情况下，生产晶片可以是GaAs晶片。 测试晶片可用于对生产晶圆进行质量评估。
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公开(公告)号：US20120080790A1
公开(公告)日：2012-04-05
申请号：US12898622
申请日：2010-10-05
IPC分类号： H01L23/532 , C25D17/06 , H01L21/02 , C25D17/12
CPC分类号： H01L21/76898 , C25D3/48 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D17/10 , C25D17/12 , C25D21/10 , H01L21/304 , H01L21/6835 , H01L21/78 , H01L23/481 , H01L24/05 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0557 , H01L2924/00014 , H01L2924/01019 , H01L2924/1305 , H01L2924/00 , H01L2224/05552
摘要： Apparatus and methods for uniform metal plating onto a semiconductor wafer, such as GaAs wafer, are disclosed. One such apparatus can include an anode and a showerhead body. The anode can include an anode post and a showerhead anode plate. The showerhead anode plate can include holes sized to dispense a particular plating solution, such as plating solution that includes gold, onto a wafer. The showerhead body can be coupled to the anode post and the showerhead anode plate. The showerhead body can be configured to create a seal sufficient to substantially prevent a reduction of pressure in the plating solution flowing from the anode post to holes of the showerhead anode plate.
摘要翻译： 公开了用于均匀金属电镀到诸如GaAs晶片的半导体晶片上的装置和方法。 一种这样的设备可以包括阳极和喷头体。 阳极可以包括阳极柱和喷头阳极板。 喷头阳极板可以包括孔，其大小可以将诸如包括金的电镀溶液等特定电镀液分配到晶片上。 淋浴头主体可以连接到阳极柱和喷头阳极板。 淋浴头体可以被配置成产生足以基本上防止从阳极柱流到喷淋阳极板的孔的电镀液中的压力降低的密封。
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公开(公告)号：US08415770B2
公开(公告)日：2013-04-09
申请号：US13462651
申请日：2012-05-02
IPC分类号： H01L23/544
CPC分类号： H01L21/76898 , C25D3/48 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D17/10 , C25D17/12 , C25D21/10 , H01L21/304 , H01L21/6835 , H01L21/78 , H01L23/481 , H01L24/05 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0557 , H01L2924/00014 , H01L2924/01019 , H01L2924/1305 , H01L2924/00 , H01L2224/05552
摘要： Apparatus and methods for uniform metal plating onto a semiconductor wafer, such as GaAs wafer, are disclosed. One such apparatus can include an anode and a showerhead body. The anode can include an anode post and a showerhead anode plate. The showerhead anode plate can include holes sized to dispense a particular plating solution, such as plating solution that includes gold, onto a wafer. The showerhead body can be coupled to the anode post and the showerhead anode plate. The showerhead body can be configured to create a seal sufficient to substantially prevent a reduction of pressure in the plating solution flowing from the anode post to holes of the showerhead anode plate.
摘要翻译： 公开了用于均匀金属电镀到诸如GaAs晶片的半导体晶片上的装置和方法。 一种这样的设备可以包括阳极和喷头体。 阳极可以包括阳极柱和喷头阳极板。 喷头阳极板可以包括孔，其大小可以将诸如包括金的电镀溶液等特定电镀液分配到晶片上。 淋浴头主体可以连接到阳极柱和喷头阳极板。 淋浴头体可以被配置成产生足以基本上防止从阳极柱流到喷淋阳极板的孔的电镀液中的压力降低的密封。
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公开(公告)号：US20120211888A1
公开(公告)日：2012-08-23
申请号：US13462651
申请日：2012-05-02
CPC分类号： H01L21/76898 , C25D3/48 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D17/10 , C25D17/12 , C25D21/10 , H01L21/304 , H01L21/6835 , H01L21/78 , H01L23/481 , H01L24/05 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0557 , H01L2924/00014 , H01L2924/01019 , H01L2924/1305 , H01L2924/00 , H01L2224/05552
摘要： Apparatus and methods for uniform metal plating onto a semiconductor wafer, such as GaAs wafer, are disclosed. One such apparatus can include an anode and a showerhead body. The anode can include an anode post and a showerhead anode plate. The showerhead anode plate can include holes sized to dispense a particular plating solution, such as plating solution that includes gold, onto a wafer. The showerhead body can be coupled to the anode post and the showerhead anode plate. The showerhead body can be configured to create a seal sufficient to substantially prevent a reduction of pressure in the plating solution flowing from the anode post to holes of the showerhead anode plate.
摘要翻译： 公开了用于均匀金属电镀到诸如GaAs晶片的半导体晶片上的装置和方法。 一种这样的设备可以包括阳极和喷头体。 阳极可以包括阳极柱和喷头阳极板。 喷头阳极板可以包括孔，其大小可以将诸如包括金的电镀溶液等特定电镀液分配到晶片上。 淋浴头主体可以连接到阳极柱和喷头阳极板。 淋浴头体可以被配置成产生足以基本上防止从阳极柱流到喷淋阳极板的孔的电镀液中的压力降低的密封。
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公开(公告)号：US08188575B2
公开(公告)日：2012-05-29
申请号：US12898622
申请日：2010-10-05
IPC分类号： H01L23/544
CPC分类号： H01L21/76898 , C25D3/48 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/06 , C25D17/10 , C25D17/12 , C25D21/10 , H01L21/304 , H01L21/6835 , H01L21/78 , H01L23/481 , H01L24/05 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0557 , H01L2924/00014 , H01L2924/01019 , H01L2924/1305 , H01L2924/00 , H01L2224/05552
摘要： Apparatus and methods for uniform metal plating onto a semiconductor wafer, such as GaAs wafer, are disclosed. One such apparatus can include an anode and a showerhead body. The anode can include an anode post and a showerhead anode plate. The showerhead anode plate can include holes sized to dispense a particular plating solution, such as plating solution that includes gold, onto a wafer. The showerhead body can be coupled to the anode post and the showerhead anode plate. The showerhead body can be configured to create a seal sufficient to substantially prevent a reduction of pressure in the plating solution flowing from the anode post to holes of the showerhead anode plate.
摘要翻译： 公开了用于均匀金属电镀到诸如GaAs晶片的半导体晶片上的装置和方法。 一种这样的设备可以包括阳极和喷头体。 阳极可以包括阳极柱和喷头阳极板。 喷头阳极板可以包括孔，其大小可以将诸如包括金的电镀溶液等特定电镀液分配到晶片上。 淋浴头主体可以连接到阳极柱和喷头阳极板。 淋浴头体可以被配置成产生足以基本上防止从阳极柱流到喷淋阳极板的孔的电镀液中的压力降低的密封。
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公开(公告)号：US20120080150A1
公开(公告)日：2012-04-05
申请号：US12898648
申请日：2010-10-05
申请人： Jens A. Riege , Steve Canale , David J. Zapp
发明人： Jens A. Riege , Steve Canale , David J. Zapp
IPC分类号： B32B38/10
CPC分类号： H01L21/6838 , B32B38/10 , B32B2457/14 , H01L21/67092
摘要： Disclosed are systems, devices and methodologies for separating wafers from carrier plates. In certain wafer processing operations, it is desirable to temporarily mount a wafer on a carrier plate for support and ease of handling. Such a mounting can be achieved by bonding the wafer and the carrier plate with an adhesive. Once such operations are completed, the wafer needs to be separated or unbonded from the carrier plate. Such a separation process can be achieved by applying a mechanical shear force to the wafer-carrier plate assembly. Various devices and methodologies, and related features, are disclosed.
摘要翻译： 公开了用于从载板分离晶片的系统，装置和方法。 在某些晶片处理操作中，期望将晶片临时安装在载体板上用于支撑和易于处理。 这种安装可以通过用粘合剂粘合晶片和载体板来实现。 一旦这样的操作完成，晶片需要与载体板分离或未粘合。 这种分离过程可以通过对晶片载体板组件施加机械剪切力来实现。 公开了各种装置和方法以及相关特征。
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公开(公告)号：US08758553B2
公开(公告)日：2014-06-24
申请号：US12898648
申请日：2010-10-05
申请人： Jens A. Riege , Steve Canale , David J. Zapp
发明人： Jens A. Riege , Steve Canale , David J. Zapp
IPC分类号： B32B38/10
CPC分类号： H01L21/6838 , B32B38/10 , B32B2457/14 , H01L21/67092
摘要： Disclosed are systems, devices and methodologies for separating wafers from carrier plates. In certain wafer processing operations, it is desirable to temporarily mount a wafer on a carrier plate for support and ease of handling. Such a mounting can be achieved by bonding the wafer and the carrier plate with an adhesive. Once such operations are completed, the wafer needs to be separated or unbonded from the carrier plate. Such a separation process can be achieved by applying a mechanical shear force to the wafer-carrier plate assembly. Various devices and methodologies, and related features, are disclosed.
摘要翻译： 公开了用于从载板分离晶片的系统，装置和方法。 在某些晶片处理操作中，期望将晶片临时安装在载体板上用于支撑和易于处理。 这种安装可以通过用粘合剂粘合晶片和载体板来实现。 一旦这样的操作完成，晶片需要与载体板分离或未粘合。 这种分离过程可以通过对晶片载体板组件施加机械剪切力来实现。 公开了各种装置和方法以及相关特征。
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