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    Broadband tunable semiconductor laser source
    2.
    发明授权
    Broadband tunable semiconductor laser source 失效
    宽带可调半导体激光源

    公开(公告)号：US6108362A

    公开(公告)日：2000-08-22

    申请号：US954305

    申请日：1997-10-17

    申请人： Laura Ellen Adams ,  Clyde George Bethea ,  Wei-Chiao Fang ,  Gerald Nykolak ,  Roosevelt People ,  Arthur Mike Sergent ,  Tawee Tanbun-Ek ,  Won-Tien Tsang

    发明人： Laura Ellen Adams ,  Clyde George Bethea ,  Wei-Chiao Fang ,  Gerald Nykolak ,  Roosevelt People ,  Arthur Mike Sergent ,  Tawee Tanbun-Ek ,  Won-Tien Tsang

    IPC分类号： H01S3/10 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/00 ,  H01S3/08

    CPC分类号： H01S5/06258 ,  H01S5/10

    摘要： A tunable semiconductor laser comprises a gain section having an MQW active region, a uniform pitch grating DFB region, and first waveguide. A composite reflector, including a second MQW region and a second waveguide, forms a cavity resonator with the DFB region. A voltage applied to the composite reflector induces a quantum confined stark effect, thereby allowing the wavelength to be altered. In one embodiment, the current drive to the active region and the shape of the first waveguide (e.g., a raised-sine function) are mutually adapted so that N longitudinal modes have essentially the same threshold gain and so that the DFB region spanned by the first waveguide is segmented into N zones, each zone providing optical feedback at a different wavelength corresponding to a different longitudinal mode.

    摘要翻译： 可调谐半导体激光器包括具有MQW有源区，均匀间距光栅DFB区和第一波导的增益部。 包括第二MQW区域和第二波导的复合反射器与DFB区域形成空腔谐振器。 施加到复合反射器的电压引起量子限制的斯塔克效应，从而允许改变波长。 在一个实施例中，对有源区域的当前驱动和第一波导的形状（例如，升高的正弦函数）相互适应，使得N个纵向模式具有基本上相同的阈值增益，并且使得由 第一波导被分割成N个区域，每个区域提供对应于不同纵向模式的不同波长的光学反馈。

    Sub-carrier multiplexing in broadband optical networks
    4.
    发明授权
    Sub-carrier multiplexing in broadband optical networks 失效
    宽带光网络中的子载波复用

    公开(公告)号：US06081361A

    公开(公告)日：2000-06-27

    申请号：US954575

    申请日：1997-10-17

    申请人： Laura Ellen Adams ,  Clyde George Bethea ,  Gerald Nykolak ,  Roosevelt People ,  Tawee Tanbun-Ek

    发明人： Laura Ellen Adams ,  Clyde George Bethea ,  Gerald Nykolak ,  Roosevelt People ,  Tawee Tanbun-Ek

    IPC分类号： H04J14/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/50 ,  H04B10/04 ,  H04B10/06 ,  H04B10/142 ,  H04B10/152 ,  H04J7/00 ,  H04J14/02 ,  H04B10/01 ,  H01S3/08 ,  H04B10/12

    CPC分类号： H04J14/0298 ,  H01S5/0265 ,  H01S5/06258 ,  H04J7/00 ,  H01S5/1243

    摘要： In a WDM fiber-optic network, a unique laser transmitter enables signals to be routed at three hierarchical levels: at one level discrimination among signal paths is based on N WDM wavelength channels, at another level discrimination is based on m AM subcarrier frequency channels, and at a third level discrimination is based on n FM subcarrier frequency channels. Thus, a total of Nmn distinguishable optical channels can be accommodated and a like number of users served. The laser transmitter comprises a broadband, tunable semiconductor laser which includes an intracavity, integrated composite reflector to which a tuning voltage and a FM dither signal are applied, an intracavity gain section to which drive current is applied, and an extracavity, integrated electroabsorption modulator to which an information (e.g., data, voice, video) signal and an AM dither signal are applied. The tuning voltage provides coarse wavelength tuning among N WDM channels, whereas the FM dither signal produces an additional m channels via FM-SCM. The AM dither likewise produces an additional n channels via AM-SCM.

    摘要翻译： 在WDM光纤网络中，独特的激光发射机使信号能够以三个等级的级别进行路由：在一个级别，信号路径之间的鉴别基于N个WDM波长信道，在另一个等级，鉴别是基于m个AM子载波频率信道， 并且在第三级鉴别是基于n个FM子载波频率信道。 因此，可以容纳总共Nmn个可辨别的光学通道并且服务相同数量的用户。 激光发射机包括宽带可调谐半导体激光器，其包括腔内，集成复合反射器，调谐电压和FM抖动信号施加到该腔内，集成复合反射器，施加驱动电流的腔内增益部分，以及腔外集成电吸收调制器 其中应用信息（例如，数据，语音，视频）信号和AM抖动信号。 调谐电压在N个WDM通道中提供粗略的波长调谐，而FM抖动信号通过FM-SCM产生额外的m个通道。 AM抖动同样通过AM-SCM产生另外的n个通道。

    Process for fabricating an optical waveguide
    7.
    发明授权
    Process for fabricating an optical waveguide 失效
    光波导制造工艺

    公开(公告)号：US06261857B1

    公开(公告)日：2001-07-17

    申请号：US09097924

    申请日：1998-06-17

    申请人： Muhammad Ashrafal Alam ,  Mark S. Hybertsen ,  Roosevelt People

    发明人： Muhammad Ashrafal Alam ,  Mark S. Hybertsen ,  Roosevelt People

    IPC分类号： H01L2100

    CPC分类号： G02B6/1228 ,  G02B6/12004 ,  G02B2006/12173 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/2272

    摘要： A process for fabricating a waveguide with a desired tapered profile is disclosed. The waveguide has a first section with a first height and a second section with a second height. The first height is greater than the second height. The waveguide height tapers from the first height to the second height. The waveguide is a compound semiconductor material and is formed using selective area growth. In selective area growth, a dielectric mask is formed on a substrate. The dimensions of the dielectric mask are selected to provide a waveguide with the desired dimensions. The compound semiconductor material is deposited on the substrate using chemical vapor deposition. The dielectric mask affects the rate at which the compound material is deposited in areas of the substrate proximate to the mask. Therefore, the profile of the waveguide formed using the selected mask dimensions is modeled and compared with the desired profile. If modeled profile is not acceptably similar to the desired profile, the dimensions of the mask are modified. The profile of the waveguide formed using the modified mask dimensions is again modeled, and the modeled waveguide profile is compared with the desired waveguide profile. This process is repeated until the modeled profile is sufficiently similar to the desired profile. After the mask dimensions are selected, the mask is formed on the substrate, and the compound semiconductor waveguide is formed on the substrate using selective area growth.

    摘要翻译： 公开了一种制造具有所需锥形轮廓的波导的方法。 波导具有具有第一高度的第一部分和具有第二高度的第二部分。 第一个高度大于第二个高度。 波导高度从第一高度向第二高度逐渐变细。 波导是化合物半导体材料，并且使用选择性面积生长形成。 在选择性区域生长中，在基板上形成介电掩模。 选择介电掩模的尺寸以提供具有期望尺寸的波导。 使用化学气相沉积将化合物半导体材料沉积在基板上。 介电掩模影响复合材料沉积在靠近掩模的基板的区域中的速率。 因此，使用所选择的掩模尺寸形成的波导的轮廓被建模并与期望的轮廓进行比较。 如果建模的轮廓不可接受地类似于所需的轮廓，则掩模的尺寸被修改。 再次对使用修改的掩模尺寸形成的波导的轮廓进行建模，并将所建模的波导轮廓与期望的波导轮廓进行比较。 重复该过程，直到建模的轮廓与期望的轮廓充分相似。 在选择掩模尺寸之后，在基板上形成掩模，并且使用选择性区域生长在基板上形成化合物半导体波导。