公开(公告)号：US20060196603A1

公开(公告)日：2006-09-07

申请号：US11075527

申请日：2005-03-07

申请人： Lawrence Lei ,  Siqing Lu ,  Steven Gianoulakis ,  Won Bang ,  David Sun ,  Yen-Kun Victor Wang

发明人： Lawrence Lei ,  Siqing Lu ,  Steven Gianoulakis ,  Won Bang ,  David Sun ,  Yen-Kun Victor Wang

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01J37/32449 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/3321

摘要： Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.

摘要翻译： 本发明的技术涉及将沉积气体分布到基底上。 在一个实施例中，提供了用于处理室的气体分配器。 气体分配器包括具有气体偏转表面和气体分配器面的主体。 气体偏转表面限定清洁气体通路。 气体分配器面设置在与气体偏转表面相对的主体的相反侧上，并朝向衬底支撑构件。 气体分配器面包括升高的台阶和穿过升高台阶的至少一组孔。 所述至少一组孔适于将沉积气体分布在位于所述基板支撑构件上的基板上。

公开(公告)号：US20080044568A1

公开(公告)日：2008-02-21

申请号：US11877490

申请日：2007-10-23

申请人： Lawrence Lei ,  Siqing Lu

发明人： Lawrence Lei ,  Siqing Lu

IPC分类号： C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/45563 ,  C23C16/45578

摘要： Techniques of the present invention are directed to reducing clogging of nozzles. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply, a nozzle opening at a distal end, and a heat shield disposed around at least a portion of the nozzle opening. A nozzle passage extends from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber.

摘要翻译： 本发明的技术涉及减少喷嘴堵塞。 在一个实施例中，将气体引入半导体处理室的方法包括提供喷嘴，该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分，以及远离室壁向内取向的远侧部分 半导体处理室的内部。 喷嘴包括与气体供应联接的近端，在远端处的喷嘴开口和围绕喷嘴开口的至少一部分设置的热屏蔽。 喷嘴通道从近端延伸到远端。 该方法还包括将来自气体供应的气体通过近端，喷嘴通道和喷嘴的喷嘴开口流入半导体处理室的内部。

公开(公告)号：US20060048707A1

公开(公告)日：2006-03-09

申请号：US10934213

申请日：2004-09-03

申请人： Lawrence Lei ,  Siqing Lu

发明人： Lawrence Lei ,  Siqing Lu

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/45563 ,  C23C16/45578

摘要： Techniques of the present invention are directed to reducing clogging of nozzles. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply, a nozzle opening at a distal end, and a heat shield disposed around at least a portion of the nozzle opening. A nozzle passage extends from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber.

摘要翻译： 本发明的技术涉及减少喷嘴堵塞。 在一个实施例中，将气体引入半导体处理室的方法包括提供喷嘴，该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分，以及远离室壁向内取向的远侧部分 半导体处理室的内部。 喷嘴包括与气体供应联接的近端，在远端处的喷嘴开口和围绕喷嘴开口的至少一部分设置的热屏蔽。 喷嘴通道从近端延伸到远端。 该方法还包括将来自气体供应的气体通过近端，喷嘴通道和喷嘴的喷嘴开口流入半导体处理室的内部。

公开(公告)号：US20050218115A1

公开(公告)日：2005-10-06

申请号：US11080387

申请日：2005-03-14

申请人： Lawrence Lei ,  Siqing Lu ,  Steven Gianoulakis ,  Irene Chou ,  David Sun

发明人： Lawrence Lei ,  Siqing Lu ,  Steven Gianoulakis ,  Irene Chou ,  David Sun

IPC分类号： G01L21/30 ,  H01L21/302

CPC分类号： C23C16/45563

摘要： Embodiments of the present invention are directed to reducing clogging of nozzles and to reducing flow variance through the nozzles in a semiconductor processing chamber. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply. The nozzle includes a nozzle opening at a distal end. The nozzle includes a nozzle passage extending from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber; and choking the gas flow through the nozzle passage at a choke location which is spaced away from the distal end.

摘要翻译： 本发明的实施例涉及减少喷嘴堵塞和减少半导体处理室中的喷嘴的流动变化。 在一个实施例中，将气体引入半导体处理室的方法包括提供喷嘴，该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分，以及远离室壁向内取向的远侧部分 半导体处理室的内部。 喷嘴包括与气体供应连接的近端。 喷嘴包括在远端的喷嘴开口。 喷嘴包括从近端延伸到远端的喷嘴通道。 该方法还包括使气体从气体供应通过喷嘴的近端，喷嘴通道和喷嘴开口流入半导体处理室的内部; 并且在与远端间隔开的扼流位置处阻塞气体流过喷嘴通道。

公开(公告)号：US20070063698A1

公开(公告)日：2007-03-22

申请号：US11522416

申请日：2006-09-18

申请人： Lawrence Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Miller

发明人： Lawrence Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Miller

IPC分类号： G01B7/06

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US20080186022A1

公开(公告)日：2008-08-07

申请号：US12099747

申请日：2008-04-08

申请人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

发明人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

IPC分类号： G01B7/06

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US07355394B2

公开(公告)日：2008-04-08

申请号：US11522416

申请日：2006-09-18

申请人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu P. Gu ,  Joel Huston ,  Paul Smith ,  G. Lorimer Miller

发明人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu P. Gu ,  Joel Huston ,  Paul Smith ,  G. Lorimer Miller

IPC分类号： G01B7/06 ,  G01N27/72

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US07201803B2

公开(公告)日：2007-04-10

申请号：US10731651

申请日：2003-12-09

申请人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong (Andrew) Chang ,  Anh N. Nguyen ,  Ming Xi

发明人： Siqing Lu ,  Yu Chang ,  Dongxi Sun ,  Vinh Dang ,  Michael X. Yang ,  Anzhong (Andrew) Chang ,  Anh N. Nguyen ,  Ming Xi

IPC分类号： B05C11/00

CPC分类号： G05D11/133 ,  Y10T436/104998 ,  Y10T436/12

摘要： A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

摘要翻译： 用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。 该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。 控制阀的刷新时间可能小于10毫秒。 因此，阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。 可以通过可编程逻辑控制器的输出电源实现硬件互锁。

公开(公告)号：US20070037397A1

公开(公告)日：2007-02-15

申请号：US11202043

申请日：2005-08-11

申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

IPC分类号： H01L21/302

CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

摘要翻译： 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。

公开(公告)号：US20060177600A1

公开(公告)日：2006-08-10

申请号：US11053363

申请日：2005-02-08

申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

IPC分类号： H05H1/02 ,  C23C16/00 ,  H05H1/46

CPC分类号： H01J37/32688 ,  H01J37/321

摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate within a substrate plane during substrate processing. A gas-delivery system is configured to introduce a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber. A magnetic confinement ring with magnetic dipoles is disposed circumferentially around a symmetry axis orthogonal to the substrate plane and provides a magnetic field with a net dipole moment substantially nonparallel with the substrate plane. A controller controls the gas-delivery system, the pressure-control system, and the high-density plasma system.

摘要翻译： 衬底处理系统具有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间将衬底支撑在衬底平面内。 气体输送系统构造成将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体产生系统与处理室可操作地耦合。 具有磁偶极子的磁约束环周围围绕与基板平面正交的对称轴设置，并提供具有与基板平面基本上不平行的净偶极矩的磁场。 控制器控制气体输送系统，压力控制系统和高密度等离子体系统。