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公开(公告)号：US20120104355A1
公开(公告)日：2012-05-03
申请号：US13298570
申请日：2011-11-17
IPC分类号： H01L33/06
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US09437430B2
公开(公告)日：2016-09-06
申请号：US12020006
申请日：2008-01-25
IPC分类号： H01L31/0328 , H01L21/02 , H01L33/08 , H01L33/12
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译： 制造半导体结构以包括超过其预测临界厚度的应变外延层。
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公开(公告)号：US08080833B2
公开(公告)日：2011-12-20
申请号：US12764584
申请日：2010-04-21
IPC分类号： H01L33/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US10446391B2
公开(公告)日：2019-10-15
申请号：US13298570
申请日：2011-11-17
IPC分类号： H01L29/06 , H01L21/02 , H01L33/12 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/02
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
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公开(公告)号：US20100264460A1
公开(公告)日：2010-10-21
申请号：US12764584
申请日：2010-04-21
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US20080187016A1
公开(公告)日：2008-08-07
申请号：US12020006
申请日：2008-01-25
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译： 制造半导体结构以包括超过其预测临界厚度的应变外延层。
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公开(公告)号：US07638346B2
公开(公告)日：2009-12-29
申请号：US11503660
申请日：2006-08-14
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US20100135349A1
公开(公告)日：2010-06-03
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US08222650B2
公开(公告)日：2012-07-17
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： H01L27/15
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US20090283028A1
公开(公告)日：2009-11-19
申请号：US11503660
申请日：2006-08-14
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： C30B1/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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