公开(公告)号：US06811680B2

公开(公告)日：2004-11-02

申请号：US10038066

申请日：2002-01-03

申请人： Liang-Yuh Chen ,  Wei-Yung Hsu ,  Alain Duboust ,  Ratson Morad ,  Daniel A. Carl

发明人： Liang-Yuh Chen ,  Wei-Yung Hsu ,  Alain Duboust ,  Ratson Morad ,  Daniel A. Carl

IPC分类号： B23H506

CPC分类号： B23H5/08

摘要： A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

摘要翻译： 提供了一种用于平坦化衬底上的材料层的方法和装置。 在一个方面，提供一种用于处理衬底的方法，包括在衬底表面上形成钝化层，在电解质溶液中抛光衬底，向衬底表面施加阳极偏压，以及从衬底的至少一部分去除材料 表面。 在另一方面，提供了一种装置，其包括部分外壳，抛光制品，阴极，电源，可移动地设置在抛光制品上方的基板载体，以及基于计算机的控制器，以将基板定位在电解质溶液中以形成 在衬底表面上的钝化层，用抛光制品抛光电解质溶液中的衬底，并将阳极偏压施加到衬底表面或抛光制品上以从衬底表面的至少一部分去除材料。

公开(公告)号：US20050056537A1

公开(公告)日：2005-03-17

申请号：US10972884

申请日：2004-10-25

申请人： Liang-Yuh Chen ,  Wei-Yung Hsu ,  Alain Duboust ,  Ratson Morad ,  Daniel Carl

发明人： Liang-Yuh Chen ,  Wei-Yung Hsu ,  Alain Duboust ,  Ratson Morad ,  Daniel Carl

IPC分类号： B24B37/00 ,  B23H5/08 ,  B24B37/04 ,  H01L21/304 ,  H01L21/316 ,  B23H5/00

CPC分类号： B23H5/08

摘要： A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

摘要翻译： 提供了一种用于平坦化衬底上的材料层的方法和装置。 在一个方面，提供一种用于处理衬底的方法，包括在衬底表面上形成钝化层，在电解质溶液中抛光衬底，向衬底表面施加阳极偏压，以及从衬底的至少一部分去除材料 表面。 在另一方面，提供了一种装置，其包括部分外壳，抛光制品，阴极，电源，可移动地设置在抛光制品上方的基板载体，以及基于计算机的控制器，以将基板定位在电解质溶液中以形成 在衬底表面上的钝化层，用抛光制品抛光电解质溶液中的衬底，并将阳极偏压施加到衬底表面或抛光制品上以从衬底表面的至少一部分去除材料。

公开(公告)号：US06884724B2

公开(公告)日：2005-04-26

申请号：US09939323

申请日：2001-08-24

申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl

IPC分类号： H01L21/288 ,  H01L21/321 ,  H01L21/20

CPC分类号： H01L21/7684 ,  H01L21/3212

摘要： Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

公开(公告)号：US07323095B2

公开(公告)日：2008-01-29

申请号：US10792069

申请日：2004-03-03

申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

IPC分类号： C25D21/00 ,  C25D7/12

CPC分类号： C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc. During the deposition, the partial enclosure and the substrate are rotated relative one another.

摘要翻译： 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基底定位在其中具有电解质的部分封闭体中，其中离开可渗透盘的第一距离处。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘。 在沉积期间，部分封闭物和基底相对彼此旋转。

公开(公告)号：US06896776B2

公开(公告)日：2005-05-24

申请号：US09739139

申请日：2000-12-18

申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel A. Carl ,  Sasson Somekh

IPC分类号： B24B37/00 ,  B24B37/04 ,  C25D5/00 ,  C25D5/22 ,  C25D7/12 ,  H01L21/288 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  C25D1/00 ,  C25D17/00

CPC分类号： C25D7/123 ,  C25D5/06 ,  C25D5/22 ,  C25D17/001 ,  C25D17/008 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a fist distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.

摘要翻译： 提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。 衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面，提供了一种方法，其中将基板定位在其中具有电解质的部分封闭件中，其中离开可渗透盘的第一距离。 任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。 接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。 在沉积期间，部分封闭物和基底相对彼此旋转。

公开(公告)号：US20050202677A1

公开(公告)日：2005-09-15

申请号：US11114936

申请日：2005-04-25

申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel Carl

发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel Carl

IPC分类号： H01L21/288 ,  H01L21/321 ,  C25C3/00

CPC分类号： H01L21/7684 ,  H01L21/3212

摘要： Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

摘要翻译： 提供了用于平坦化基板表面的方法和装置。 在一个方面，提供了一种用于平坦化衬底表面的方法，包括将第一导电材料抛光到阻挡层材料，通过电化学沉积技术在第一导电材料上沉积第二导电材料，以及抛光第二导电材料和屏障 层材料到介电层。 在另一方面，提供一种用于在衬底上形成平坦化层的处理系统，所述处理系统包括基于计算机的控制器，所述计算机控制器被配置为使所述系统将第一导电材料抛光至阻挡层材料，将第二导电材料沉积在所述第二导电材料上 通过电化学沉积技术的第一导电材料，并将第二导电材料和阻挡层材料抛光到介电层。

公开(公告)号：US20070187258A1

公开(公告)日：2007-08-16

申请号：US11355769

申请日：2006-02-15

申请人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

发明人： Tianbao Du ,  Feng Liu ,  Alain Duboust ,  Wei-Yung Hsu ,  Liang-Yuh Chen

IPC分类号： B23H5/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125

摘要： Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.

摘要翻译： 提供了从衬底表面去除导电材料的方法。 在一个方面，一种方法包括提供包括在衬底场区域之间形成的介电特征定义的衬底，设置在特征定义中的衬底场区域上的阻挡材料和设置在阻挡材料上的导电材料， 以直流偏压去除导电材料的主体部分，并抛光衬底以用脉冲偏压去除导电材料的剩余部分。

公开(公告)号：US20060006074A1

公开(公告)日：2006-01-12

申请号：US11196876

申请日：2005-08-04

申请人： Feng Liu ,  Tianbao Du ,  Alain Duboust ,  Yan Wang ,  Yongqi Hu ,  Stan Tsai ,  Liang-Yuh Chen ,  Wen-Chiang Tu ,  Wei-Yung Hsu

发明人： Feng Liu ,  Tianbao Du ,  Alain Duboust ,  Yan Wang ,  Yongqi Hu ,  Stan Tsai ,  Liang-Yuh Chen ,  Wen-Chiang Tu ,  Wei-Yung Hsu

IPC分类号： B23H5/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/6875 ,  H01L21/7684

摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.

摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面，提供了一种处理衬底以除去布置在形成于衬底中的窄特征定义上的导电材料的方法，该导电材料以比通过电化学机械抛光技术在衬底中形成的宽特征定义上布置的导电材料更高的去除速率除去，以及 然后用至少一种化学机械抛光技术研磨衬底。

公开(公告)号：US20080003931A1

公开(公告)日：2008-01-03

申请号：US11562811

申请日：2006-11-22

申请人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Yan Wang ,  Shi-Ping Wang ,  Zhihong Wang ,  Andrew Nagengast ,  Wei-Yung Hsu ,  Liang-Yuh Chen

发明人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Yan Wang ,  Shi-Ping Wang ,  Zhihong Wang ,  Andrew Nagengast ,  Wei-Yung Hsu ,  Liang-Yuh Chen

IPC分类号： B24B53/007

CPC分类号： B24B37/30 ,  B24B55/00 ,  H01L21/67219

摘要： A carrier head and a method of cleaning the carrier head are disclosed. The carrier head may have one or more openings through a sidewall that extend into a cavity within the carrier head using a fluid passage. The openings may each have a lip. The lip may have a chamfered edge. Additionally, a fluid passage may slope generally downward from the openings to the cavity. The chamfered lips and the sloped fluid passage reduce back splashing and help ensure that sufficient rinsing fluid reaches the cavity to rinse polishing fluid and particles from the carrier head. The present invention relates to carrier heads for polishing or planarizing semiconductor substrates by chemical mechanical polishing (CMP) or electrochemical mechanical polishing (ECMP). The cavities in the carrier head are cleaned by rinsing fluid (i.e., liquid or gas) from inside the cavity towards a substrate receiving side of the carrier head.

摘要翻译： 公开了载体头和清洁载体头的方法。 载体头部可以具有穿过侧壁的一个或多个开口，该侧壁使用流体通道延伸到载体头部内的空腔中。 开口可以各自具有唇缘。 唇缘可以具有倒角边缘。 此外，流体通道可以从开口大致向下倾斜到空腔。 倒角的唇缘和倾斜的流体通道减少了飞溅，并有助于确保足够的冲洗流体到达腔体以从载体头部漂洗抛光液和颗粒。 本发明涉及用于通过化学机械抛光（CMP）或电化学机械抛光（ECMP）对半导体衬底进行抛光或平面化的载体头。 载体头部中的空腔通过从空腔内部朝向承载头的基板接收侧的冲洗流体（即，液体或气体）来清洁。

公开(公告)号：US20060219663A1

公开(公告)日：2006-10-05

申请号：US11338146

申请日：2006-01-23

申请人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

发明人： Shi-Ping Wang ,  Martin Wohlert ,  Alain Duboust ,  Renhe Jia ,  Feng Liu ,  Yuan Tian ,  Liang-Yuh Chen ,  Stan Tsai ,  Wei-Yung Hsu

IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  H01L21/32125 ,  H01L21/7684

摘要： Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.

摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。 一方面，提供了全序列电化学机械平面化技术。 在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。 此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。 抛光组合物可以以全序或混合平面化技术使用。 本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。