利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.027 秒)

    In-situ-etch-assisted HDP deposition
    6.
    发明申请
    In-situ-etch-assisted HDP deposition 失效
    原位蚀刻辅助HDP沉积

    公开(公告)号：US20060166515A1

    公开(公告)日：2006-07-27

    申请号：US11388657

    申请日：2006-03-24

    申请人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    发明人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

    摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

    摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10×10 6离子/ cm 3的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

    In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
    7.
    发明申请
    In-situ-etch-assisted HDP deposition using SiF4 and hydrogen 有权
    使用SiF4和氢进行原位蚀刻辅助的HDP沉积

    公开(公告)号：US20050048801A1

    公开(公告)日：2005-03-03

    申请号：US10655230

    申请日：2003-09-03

    申请人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    发明人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/50 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

    摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.

    摘要翻译： 提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。 包括SiF4，H2，硅源和氧化性气体反应物的工艺气体流入处理室。 从工艺气体形成具有至少10 11 / cm 3离子密度的等离子体。 使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。 在这种沉积过程中，衬底的温度大于450℃

    In-situ-etch-assisted HDP deposition using SiF4
    8.
    发明申请
    In-situ-etch-assisted HDP deposition using SiF4 失效
    使用SiF4进行原位蚀刻辅助HDP沉积

    公开(公告)号：US20050164517A1

    公开(公告)日：2005-07-28

    申请号：US11089874

    申请日：2005-03-25

    申请人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    发明人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/50 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

    摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.

    摘要翻译： 提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。 包括SiF 4 N，流动气体，硅源和氧化性气体反应物的工艺气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。

    RADICAL STEAM CVD
    9.
    发明申请
    RADICAL STEAM CVD 审中-公开
    放射性CVD

    公开(公告)号：US20120177846A1

    公开(公告)日：2012-07-12

    申请号：US13236388

    申请日：2011-09-19

    申请人： DongQing Li ,  Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle

    发明人： DongQing Li ,  Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle

    IPC分类号： C23C16/40 ,  C23C16/56 ,  C23C16/50

    CPC分类号： C23C16/308 ,  C23C16/045 ,  C23C16/452 ,  C23C16/56

    摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

    摘要翻译： 描述形成氧化硅层的方法。 这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。 可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。 该方法导致在衬底上沉积含硅 - 氧和氮的层。 然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。 氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

    Conformal layers by radical-component CVD
    10.
    发明授权
    Conformal layers by radical-component CVD 有权
    通过自由基成分CVD形成保形层

    公开(公告)号：US08563445B2

    公开(公告)日：2013-10-22

    申请号：US13024487

    申请日：2011-02-10

    申请人： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

    发明人： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

    IPC分类号： H01L21/469

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/76837

    摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.

    摘要翻译： 描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅氮前驱物和自由基 - 氮前体。 主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。 由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。 沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。 可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。 已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。