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    Sequential gas flow oxide deposition technique
    3.
    发明申请
    Sequential gas flow oxide deposition technique 失效
    顺序气流氧化沉积技术

    公开(公告)号：US20050019494A1

    公开(公告)日：2005-01-27

    申请号：US10627228

    申请日：2003-07-25

    申请人： Farhad Moghadam ,  Michael Cox ,  Padmanabhan Krishnaraj ,  Thanh Pham

    发明人： Farhad Moghadam ,  Michael Cox ,  Padmanabhan Krishnaraj ,  Thanh Pham

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507

    CPC分类号： C23C16/45542 ,  C23C16/402 ,  C23C16/507

    摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.

    摘要翻译： 一种在基板上沉积石英玻璃绝缘膜的方法。 在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于 或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

    Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers
    4.
    发明授权
    Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers 失效
    低偏压沉积高密度等离子体化学气相沉积硅酸盐玻璃层

    公开(公告)号：US06667248B2

    公开(公告)日：2003-12-23

    申请号：US09949414

    申请日：2001-09-05

    申请人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

    发明人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

    IPC分类号： H01L2131

    CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

    摘要： A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

    摘要翻译： 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏置功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。

    Process gas distribution for forming stable fluorine-doped silicate glass and other films
    8.
    发明授权
    Process gas distribution for forming stable fluorine-doped silicate glass and other films 失效
    用于形成稳定的氟掺杂硅酸盐玻璃等膜的工艺气体分布

    公开(公告)号：US06383954B1

    公开(公告)日：2002-05-07

    申请号：US09361682

    申请日：1999-07-27

    申请人： Yaxin Wang ,  Diana Chan ,  Turgut Sahin ,  Tetsuya Ishikawa ,  Farhad Moghadam

    发明人： Yaxin Wang ,  Diana Chan ,  Turgut Sahin ,  Tetsuya Ishikawa ,  Farhad Moghadam

    IPC分类号： H01L2131

    CPC分类号： H01L21/02274 ,  C23C16/401 ,  C23C16/455 ,  H01J37/3244 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/31625 ,  H01L21/31629

    摘要： A substrate processing system includes a housing defining a chamber for forming a film on the substrate surface of a substrate disposed within the chamber. The system includes a first plurality of nozzles that extend into the chamber for injecting a first chemical at a first distance from a periphery of the substrate surface, and a second plurality of nozzles that extend into the chamber for injecting a second chemical at a second distance from the periphery of the substrate surface. The second distance is substantially equal to or smaller than the first distance. In one embodiment, the first chemical contains a dielectric material and the second chemical contains dopant species which react with the first chemical to deposit a doped dielectric material on the substrate. Injecting the dopant species closer to the substrate surface than previously done ensures that the dopant species are distributed substantially uniformly over the substrate surface and the deposition of a stable doped dielectric layer.

    摘要翻译： 衬底处理系统包括限定用于在设置在腔室内的衬底的衬底表面上形成膜的腔室。 该系统包括第一多个喷嘴，其延伸到腔室中，用于从衬底表面的周边第一距离处注入第一化学品;以及第二多个喷嘴，其延伸到室中，用于以第二距离注入第二化学品 从基板表面的周边。 第二距离基本上等于或小于第一距离。 在一个实施例中，第一化学品包含介电材料，第二化学品含有与第一化学物质反应以在衬底上沉积掺杂电介质材料的掺杂剂物质。 注入比以前更接近于衬底表面的掺杂剂物质确保掺杂剂物质基本均匀地分布在衬底表面上并沉积稳定的掺杂介电层。