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    Sequential gas flow oxide deposition technique
    3.
    发明申请
    Sequential gas flow oxide deposition technique 失效
    顺序气流氧化沉积技术

    公开(公告)号：US20050019494A1

    公开(公告)日：2005-01-27

    申请号：US10627228

    申请日：2003-07-25

    申请人： Farhad Moghadam ,  Michael Cox ,  Padmanabhan Krishnaraj ,  Thanh Pham

    发明人： Farhad Moghadam ,  Michael Cox ,  Padmanabhan Krishnaraj ,  Thanh Pham

    IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507

    CPC分类号： C23C16/45542 ,  C23C16/402 ,  C23C16/507

    摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.

    摘要翻译： 一种在基板上沉积石英玻璃绝缘膜的方法。 在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于 或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

    GAS DELIVERY SYSTEM FOR SEMICONDUCTOR PROCESSING
    4.
    发明申请
    GAS DELIVERY SYSTEM FOR SEMICONDUCTOR PROCESSING 有权
    用于半导体加工的气体输送系统

    公开(公告)号：US20070048446A1

    公开(公告)日：2007-03-01

    申请号：US11552129

    申请日：2006-10-23

    申请人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh Pham ,  Zhong Hua

    发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh Pham ,  Zhong Hua

    IPC分类号： C23C16/00 ,  B05D3/00

    CPC分类号： H01L21/67017 ,  H01L21/67109

    摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

    摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

    In-situ-etch-assisted HDP deposition
    5.
    发明申请
    In-situ-etch-assisted HDP deposition 失效
    原位蚀刻辅助HDP沉积

    公开(公告)号：US20060166515A1

    公开(公告)日：2006-07-27

    申请号：US11388657

    申请日：2006-03-24

    申请人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    发明人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

    摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

    摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10×10 6离子/ cm 3的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

    In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
    6.
    发明申请
    In-situ-etch-assisted HDP deposition using SiF4 and hydrogen 有权
    使用SiF4和氢进行原位蚀刻辅助的HDP沉积

    公开(公告)号：US20050048801A1

    公开(公告)日：2005-03-03

    申请号：US10655230

    申请日：2003-09-03

    申请人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    发明人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/50 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

    摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.

    摘要翻译： 提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。 包括SiF4，H2，硅源和氧化性气体反应物的工艺气体流入处理室。 从工艺气体形成具有至少10 11 / cm 3离子密度的等离子体。 使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。 在这种沉积过程中，衬底的温度大于450℃

    In-situ-etch-assisted HDP deposition using SiF4
    7.
    发明申请
    In-situ-etch-assisted HDP deposition using SiF4 失效
    使用SiF4进行原位蚀刻辅助HDP沉积

    公开(公告)号：US20050164517A1

    公开(公告)日：2005-07-28

    申请号：US11089874

    申请日：2005-03-25

    申请人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    发明人： M. Karim ,  DongQing Li ,  Jeong Byun ,  Thanh Pham

    IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/50 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

    摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.

    摘要翻译： 提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。 包括SiF 4 N，流动气体，硅源和氧化性气体反应物的工艺气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。

    Pressure responsive clamp for a processing chamber
    9.
    发明授权
    Pressure responsive clamp for a processing chamber 失效
    用于处理室的压力响应夹

    公开(公告)号：US6012600A

    公开(公告)日：2000-01-11

    申请号：US590030

    申请日：1996-02-02

    申请人： Thanh Pham ,  Eugene Fukshansky ,  David Wanamaker

    发明人： Thanh Pham ,  Eugene Fukshansky ,  David Wanamaker

    IPC分类号： B65D45/18 ,  H01L21/687

    CPC分类号： B65D45/18 ,  H01L21/687

    摘要： A method and apparatus is provided which secures the lid of a processing chamber in abutting engagement with the walls of the chamber to form an airtight processing environment and which provides for the release of pressure within the chamber in the event of a sudden change in pressure such as an over pressure excursion. The method and apparatus generally comprise a clamp member having a base portion for mounting the clamp to a first surface, a contact portion for contacting a second surface and maintaining a desired relationship between the first and second surfaces, and a deflecting portion which allows separation of the first and second surfaces to relieve pressure behind the first or second surface and return to the desired relationship between the first and second surfaces.

    摘要翻译： 提供了一种方法和装置，其将处理室的盖与室的壁邻接地接合以形成气密处理环境，并且在压力突然变化的情况下提供室内压力的释放 作为过度压力的旅行。 所述方法和装置通常包括具有用于将夹具安装到第一表面的基部的夹持构件，用于接触第二表面并保持第一和第二表面之间期望的关系的接触部分和允许将第二表面分离的偏转部分 所述第一和第二表面以减轻所述第一或第二表面后面的压力并返回到所述第一和第二表面之间的所需关系。

    Liquid flow rate estimation and verification by direct liquid measurement
    10.
    发明授权
    Liquid flow rate estimation and verification by direct liquid measurement 失效
    液体流量估算和直接液体测量验证

    公开(公告)号：US5866795A

    公开(公告)日：1999-02-02

    申请号：US819593

    申请日：1997-03-17

    申请人： Yen-Kun Wang ,  Fong Chang ,  Thanh Pham ,  Jeff Plante

    发明人： Yen-Kun Wang ,  Fong Chang ,  Thanh Pham ,  Jeff Plante

    IPC分类号： G01L25/00

    CPC分类号： G01F25/0007 ,  C23C16/4481 ,  G01F1/007 ,  G01F1/708 ,  G01F25/003 ,  G01F25/0038

    摘要： An apparatus for controlling the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a purge gas supply, a carrier gas supply, a liquid flow meter, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A purge line is connected between the purge gas supply and the liquid flow meter and is used to trap a known mass of liquid precursor. To calibrate the flow of the liquid precursor, the purge gas is used to push the trapped liquid precursor through the liquid flow meter at a steady rate. The elapsed time for evacuating the trapped liquid precursor from the purge line is measured. Calibration information is computed using the mass of the trapped liquid precursor and the measured elapsed time based on the direct liquid measurement approach. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.

    摘要翻译： 用于控制液体前体流入沉积室的装置包括具有连接到沉积室上游的室入口管的液体注入口的液体注入系统。 液体注入系统包括液体前体供应源，吹扫气体供应源，载气供应器，液体流量计和控制液体前体和载体气体流到腔室的控制器。 吹扫管线连接在净化气体供应源和液体流量计之间，用于捕集已知质量的液体前体。 为了校准液体前体的流动，吹扫气体以稳定的速率推动被捕获的液体前体通过液体流量计。 测量从清除管线排出被捕获的液体前体的经过时间。 基于直接液体测量方法，使用捕获的液体前体的质量和测量的经过时间计算校准信息。 校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。