公开(公告)号：US07691753B2

公开(公告)日：2010-04-06

申请号：US11422150

申请日：2006-06-05

申请人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N. Pham ,  Farhad K. Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N. Pham ,  Farhad K. Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

IPC分类号： H01L21/302

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

公开(公告)号：US07081414B2

公开(公告)日：2006-07-25

申请号：US10445240

申请日：2003-05-23

申请人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N Pham ,  Farhad K Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N Pham ,  Farhad K Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

IPC分类号： H01L21/302

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

摘要翻译： 提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。 在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。 因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。 因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

公开(公告)号：US07033945B2

公开(公告)日：2006-04-25

申请号：US10857829

申请日：2004-06-01

申请人： Jeong Soo Byun ,  Zheng Yuan ,  Shankar Venkataraman ,  M. Ziaul Karim ,  Thanh N. Pham ,  Ellie Y. Yieh

发明人： Jeong Soo Byun ,  Zheng Yuan ,  Shankar Venkataraman ,  M. Ziaul Karim ,  Thanh N. Pham ,  Ellie Y. Yieh

IPC分类号： H01L21/311

CPC分类号： H01L21/76224

摘要： A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.

摘要翻译： 填充在基板上相邻的凸起表面之间形成的间隙的方法。 在一个实施例中，该方法包括在衬底上沉积硼掺杂石英玻璃（BSG）层，以使用热CVD工艺部分填充间隙; 在高于BSG层的共晶温度的温度下将BSG层暴露于蒸汽环境; 通过将层暴露于含氟蚀刻剂来除去BSG层的上部; 以及在BSG层上沉积未掺杂的二氧化硅玻璃（USG）层以填补间隙的剩余部分。

公开(公告)号：US20090087615A1

公开(公告)日：2009-04-02

申请号：US12290437

申请日：2008-10-29

申请人： Jennifer Y. Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh N. Pham

发明人： Jennifer Y. Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh N. Pham

IPC分类号： B32B3/24

CPC分类号： C23C16/45565 ,  C04B41/009 ,  C04B41/5353 ,  C04B41/91 ,  C23C16/4404 ,  C23C16/4407 ,  C30B35/00 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32862 ,  Y10T428/24273 ,  Y10T428/24314 ,  C04B35/505

摘要： Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

摘要翻译： 本文公开了一种用于处理室的气体分配组件中的气体分配板，其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。 气体分配板包括通常为月牙形的多个通孔。 通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。 固体含氧化钇的衬底通常包含至少99.9％的氧化钇，并且具有至少4.92g / cm 3的密度，约0.02％或更低的吸水率，以及在约10μm范围内的平均晶粒尺寸 到大约25个妈妈。 本文还公开了用于制造和清洁含氧化钇气体分配板的方法。

公开(公告)号：US07097886B2

公开(公告)日：2006-08-29

申请号：US10319827

申请日：2002-12-13

申请人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

发明人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

IPC分类号： H05H1/24

CPC分类号： H01J37/32082 ,  C23C16/045 ,  H01J2237/3327 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

摘要翻译： 一种在具有形成在两个相邻凸起特征之间的间隙的基底上沉积绝缘膜的方法。 该方法包括使用具有同时沉积和溅射部件的高密度等离子体工艺在衬底上和间隙中沉积绝缘膜的一部分，并使用原子层沉积在衬底上和间隙中沉积绝缘膜的另一部分 处理。 在一些实施例中，通过原子层沉积工艺沉积的膜的部分沉积在使用高密度等离子体CVD技术沉积的膜的部分上。 在其他实施例中，通过高密度等离子体CVD工艺沉积的膜的部分沉积在使用原子层沉积工艺沉积的膜的部分上。

公开(公告)号：US06903031B2

公开(公告)日：2005-06-07

申请号：US10655230

申请日：2003-09-03

申请人： M. Ziaul Karim ,  DongQing Li ,  Jeong Soo Byun ,  Thanh N. Pham

发明人： M. Ziaul Karim ,  DongQing Li ,  Jeong Soo Byun ,  Thanh N. Pham

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/50 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.

摘要翻译： 提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。 包括SiF 4，H 2 S，硅源和氧化性气体反应物的工艺气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。 在这种沉积过程中，衬底的温度大于450℃

公开(公告)号：US07799698B2

公开(公告)日：2010-09-21

申请号：US11422159

申请日：2006-06-05

申请人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N. Pham ,  Farhad K. Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N. Pham ,  Farhad K. Moghadam ,  Zhuang Li ,  Padmanabhan Krishnaraj

IPC分类号： H01I21/302

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

摘要翻译： 提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。 在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。 因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。 因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

公开(公告)号：US07479304B2

公开(公告)日：2009-01-20

申请号：US10918232

申请日：2004-08-13

申请人： Jennifer Y. Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh N. Pham

发明人： Jennifer Y. Sun ,  Senh Thach ,  James Dempster ,  Li Xu ,  Thanh N. Pham

IPC分类号： C23C16/00 ,  B05D3/12

CPC分类号： C23C16/45565 ,  C04B41/009 ,  C04B41/5353 ,  C04B41/91 ,  C23C16/4404 ,  C23C16/4407 ,  C30B35/00 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32862 ,  Y10T428/24273 ,  Y10T428/24314 ,  C04B35/505

摘要： Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

摘要翻译： 本文公开了一种用于处理室的气体分配组件中的气体分配板，其中气体分配板由可能还包括氧化铝的固体含氧化钇衬底制成。 气体分配板包括通常为月牙形的多个通孔。 通过超声波钻孔在固体含氧化钇基质中形成的通孔特别好。 固体含氧化钇的衬底通常包含至少99.9％的氧化钇，并且具有至少4.92g / cm 3的密度，约0.02％或更低的吸水率，以及在约10μm的范围内的平均晶粒尺寸 到大约25个妈妈。 本文还公开了用于制造和清洁含氧化钇气体分配板的方法。

公开(公告)号：US07049211B2

公开(公告)日：2006-05-23

申请号：US11089874

申请日：2005-03-25

申请人： M. Ziaul Karim ,  DongQing Li ,  Jeong Soo Byun ,  Thanh N. Pham

发明人： M. Ziaul Karim ,  DongQing Li ,  Jeong Soo Byun ,  Thanh N. Pham

IPC分类号： H01L21/44 ,  H01L21/28 ,  H01L21/469 ,  H01L21/31

CPC分类号： C23C16/402 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76837

摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.

摘要翻译： 提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。 包括SiF 4 N，流动气体，硅源和氧化性气体反应物的工艺气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。

公开(公告)号：US06511923B1

公开(公告)日：2003-01-28

申请号：US09574404

申请日：2000-05-19

申请人： Yaxin Wang ,  Michael Barnes ,  Thanh N. Pham ,  Farhad Moghadam

发明人： Yaxin Wang ,  Michael Barnes ,  Thanh N. Pham ,  Farhad Moghadam

IPC分类号： H01L2131

CPC分类号： H01L21/31053 ,  H01L21/31629

摘要： A composite insulating film including three layers is formed on a substrate having a gap. The first layer partially fills the gap and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. The second layer is formed over the first layer, and contains an undoped dielectric material such as silicon oxide, nitride, or oxynitride. The second layer is more stable and integrable, and less susceptible to moisture absorption and outgassing, than the first layer. The second layer is substantially smaller in thickness than the first layer, and at least substantially fills the gap. The third layer is formed over the second layer, and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. In a specific embodiment, the first layer is formed by plasma-enhanced chemical vapor deposition in which reactive species are generated from a process gas mixture by plasma for sputtering the first layer.

摘要翻译： 在具有间隙的基板上形成包括三层的复合绝缘膜。 第一层部分地填充间隙并且包含具有低介电常数的介电材料，例如掺杂卤素的硅酸盐玻璃。 第二层形成在第一层上，并且包含未掺杂的介电材料，例如氧化硅，氮化物或氧氮化物。 第二层比第一层更稳定和可整合，较不易吸潮和脱气。 第二层的厚度明显小于第一层，并且至少基本上填充间隙。 第三层形成在第二层上，并且包含具有低介电常数的电介质材料，例如卤素掺杂的硅酸盐玻璃。 在具体实施例中，第一层通过等离子体增强化学气相沉积形成，其中通过等离子体从工艺气体混合物产生反应性物质以溅射第一层。