公开(公告)号：US20060249808A1

公开(公告)日：2006-11-09

申请号：US10908245

申请日：2005-05-04

申请人： Louis Hsu ,  Conal Murray ,  Chandrasekhar Narayan ,  Chih-Chao Yang

发明人： Louis Hsu ,  Conal Murray ,  Chandrasekhar Narayan ,  Chih-Chao Yang

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  G11C16/02 ,  G11C17/16 ,  G11C17/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a reprogrammable electrically blowable fuse. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the electrically blowable fuse is determined by a sensing system which compares a resistance of the electrically blowable fuse to a reference resistance.

摘要翻译： 本发明提供一种可再编程的可电熔熔断器。 电可熔熔丝使用电迁移效应进行编程，并使用反向电迁移效应重新编程。 可电熔熔丝的状态（即“打开”或“关闭”）由将电可电熔丝的电阻与参考电阻进行比较的感测系统确定。

公开(公告)号：US20070281469A1

公开(公告)日：2007-12-06

申请号：US11839258

申请日：2007-08-15

申请人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Conal Murray ,  Carl Radens ,  Kwong-Hon Wong ,  Chih-Chao Yang

发明人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Conal Murray ,  Carl Radens ,  Kwong-Hon Wong ,  Chih-Chao Yang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76847 ,  H01L21/76865 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： The present invention provides an interconnect structure that can be made in the BEOL which exhibits good mechanical contact during normal chip operations and does not fail during various reliability tests as compared with the conventional interconnect structures described above. The inventive interconnect structure has a kinked interface at the bottom of a via that is located within an interlayer dielectric layer. Specifically, the inventive interconnect structure includes a first dielectric layer having at least one metallic interconnect embedded within a surface thereof; a second dielectric layer located atop the first dielectric layer, wherein said second dielectric layer has at least one aperture having an upper line region and a lower via region, wherein the lower via region includes a kinked interface; at least one pair of liners located on at least vertical walls of the at least one aperture; and a conductive material filling the at least one aperture.

摘要翻译： 本发明提供一种可以在BEOL中制造的互连结构，其在正常的芯片操作期间表现出良好的机械接触，并且在与上述的常规互连结构相比在各种可靠性测试期间不会失败。 本发明的互连结构在通孔的底部具有位于层间介质层内的扭结界面。 具体地，本发明的互连结构包括：第一介电层，其具有嵌入在其表面内的至少一个金属互连; 位于所述第一介电层顶部的第二电介质层，其中所述第二电介质层具有至少一个具有上线区域和下通孔区域的孔，其中所述下通孔区域包括扭结界面; 位于所述至少一个孔的至少垂直壁上的至少一对衬垫; 以及填充所述至少一个孔的导电材料。

公开(公告)号：US20080023789A1

公开(公告)日：2008-01-31

申请号：US11834841

申请日：2007-08-07

申请人： Louis Hsu ,  Conal Murray ,  Chaudrasekhar Narayan ,  Chih-Chao Yang

发明人： Louis Hsu ,  Conal Murray ,  Chaudrasekhar Narayan ,  Chih-Chao Yang

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  G11C16/02 ,  G11C17/16 ,  G11C17/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a reprogrammable electrically blowable fuse. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the electrically blowable fuse is determined by a sensing system which compares a resistance of the electrically blowable fuse to a reference resistance.

摘要翻译： 本发明提供一种可再编程的可电熔熔断器。 电可熔熔丝使用电迁移效应进行编程，并使用反向电迁移效应重新编程。 可电熔熔丝的状态（即“打开”或“关闭”）由将电可电熔丝的电阻与参考电阻进行比较的感测系统确定。

公开(公告)号：US20060081986A1

公开(公告)日：2006-04-20

申请号：US10964882

申请日：2004-10-14

申请人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Conal Murray ,  Carl Radens ,  Kwong-Hon Wong ,  Chih-Chao Yang

发明人： Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Conal Murray ,  Carl Radens ,  Kwong-Hon Wong ,  Chih-Chao Yang

IPC分类号： H01L23/52

CPC分类号： H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76847 ,  H01L21/76865 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： The present invention provides an interconnect structure that can be made in the BEOL which exhibits good mechanical contact during normal chip operations and does not fail during various reliability tests as compared with the conventional interconnect structures described above. The inventive interconnect structure has a kinked interface at the bottom of a via that is located within an interlayer dielectric layer. Specifically, the inventive interconnect structure includes a first dielectric layer having at least one metallic interconnect embedded within a surface thereof; a second dielectric layer located atop the first dielectric layer, wherein said second dielectric layer has at least one aperture having an upper line region and a lower via region, wherein the lower via region includes a kinked interface; at least one pair of liners located on at least vertical walls of the at least one aperture; and a conductive material filling the at least one aperture.

摘要翻译： 本发明提供一种可以在BEOL中制造的互连结构，其在正常的芯片操作期间表现出良好的机械接触，并且在与上述的常规互连结构相比在各种可靠性测试期间不会失败。 本发明的互连结构在通孔的底部具有位于层间介质层内的扭结界面。 具体地，本发明的互连结构包括：第一介电层，其具有嵌入在其表面内的至少一个金属互连; 位于所述第一介电层顶部的第二电介质层，其中所述第二电介质层具有至少一个具有上线区域和下通孔区域的孔，其中所述下通孔区域包括扭结界面; 位于所述至少一个孔的至少垂直壁上的至少一对衬垫; 以及填充所述至少一个孔的导电材料。

公开(公告)号：US09058887B2

公开(公告)日：2015-06-16

申请号：US11928258

申请日：2007-10-30

申请人： Louis C. Hsu ,  Conal E. Murray ,  Chandrasekhar Narayan ,  Chih-Chao Yang

发明人： Louis C. Hsu ,  Conal E. Murray ,  Chandrasekhar Narayan ,  Chih-Chao Yang

IPC分类号： G06F17/50 ,  G11C17/18 ,  H04L12/701 ,  H04L29/08

CPC分类号： G11C17/18 ,  G06F17/5045 ,  H04L29/08072 ,  H04L45/00

摘要： The present invention provides a reprogrammable electrically blowable fuse and associated design structure. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the electrically blowable fuse is determined by a sensing system which compares a resistance of the electrically blowable fuse to a reference resistance.

摘要翻译： 本发明提供了一种可再编程的电可熔熔丝和相关的设计结构。 电可熔熔丝使用电迁移效应进行编程，并使用反向电迁移效应重新编程。 可电熔熔丝的状态（即“打开”或“关闭”）由将电可电熔丝的电阻与参考电阻进行比较的感测系统确定。

公开(公告)号：US20090109722A1

公开(公告)日：2009-04-30

申请号：US11928258

申请日：2007-10-30

申请人： Louis C. Hsu ,  Conal E. Murray ,  Chandrasekhar Narayan ,  Chih-Chao Yang

发明人： Louis C. Hsu ,  Conal E. Murray ,  Chandrasekhar Narayan ,  Chih-Chao Yang

IPC分类号： G11C17/00

CPC分类号： G11C17/18 ,  G06F17/5045 ,  H04L29/08072 ,  H04L45/00

摘要： The present invention provides a reprogrammable electrically blowable fuse and associated design structure. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the electrically blowable fuse is determined by a sensing system which compares a resistance of the electrically blowable fuse to a reference resistance.

摘要翻译： 本发明提供了一种可再编程的电可熔熔丝和相关的设计结构。 电可熔熔丝使用电迁移效应进行编程，并使用反向电迁移效应重新编程。 可电熔熔丝的状态（即“打开”或“关闭”）由将电可电熔丝的电阻与参考电阻进行比较的感测系统确定。

公开(公告)号：US07298639B2

公开(公告)日：2007-11-20

申请号：US10908245

申请日：2005-05-04

申请人： Louis C. Hsu ,  Conal E. Murray ,  Chandrasekhar Narayan ,  Chih-Chao Yang

发明人： Louis C. Hsu ,  Conal E. Murray ,  Chandrasekhar Narayan ,  Chih-Chao Yang

IPC分类号： G11C17/00

CPC分类号： H01L23/5256 ,  G11C16/02 ,  G11C17/16 ,  G11C17/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： A electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., “opened” or “closed”) of the electrically blowable fuse is determined by a sensing system which compares a resistance of the electrically blowable fuse to a reference resistance.

摘要翻译： 使用电迁移效应对可电熔熔丝进行编程，并使用反向电迁移效应进行重新编程。 可电熔熔丝的状态（即“打开”或“关闭”）由将电可电熔丝的电阻与参考电阻进行比较的感测系统确定。

公开(公告)号：US20060231945A1

公开(公告)日：2006-10-19

申请号：US10907873

申请日：2005-04-19

申请人： Anil Chinthakindi ,  Lawrence Clevenger ,  Tom Lee ,  Gerald Matusiewicz ,  Conal Murray ,  Chih-Chao Yang

发明人： Anil Chinthakindi ,  Lawrence Clevenger ,  Tom Lee ,  Gerald Matusiewicz ,  Conal Murray ,  Chih-Chao Yang

IPC分类号： H01L23/34

CPC分类号： H01L23/5228 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method are disclosed for heat dissipation relative to a heat generating element in a semiconductor device. The structure includes a plurality of heat transmitting lines partially vertically coincidental with the heat generating element, and at least one interconnecting path from each heat transmitting line to a substrate of the semiconductor device. In one embodiment, the heat generating element includes a resistor in a non-first metal level. The invention is compatible with conventional BEOL interconnect schemes, minimizes the amount of heat transfer from the resistor to the surrounding interconnect wiring, thus eliminating the loss of current carrying capability in the wiring.

摘要翻译： 公开了相对于半导体器件中的发热元件的散热的结构和方法。 该结构包括多个与发热元件垂直一致的传热线，以及从每个传热线到半导体器件的基板的至少一个互连路径。 在一个实施例中，发热元件包括非第一金属水平的电阻器。 本发明与传统的BEOL互连方案兼容，使得从电阻器到周围互连布线的传热量最小化，从而消除了布线中的载流能力的损失。

公开(公告)号：US07657995B2

公开(公告)日：2010-02-09

申请号：US11776835

申请日：2007-07-12

申请人： Louis Hsu ,  Timothy Dalton ,  Lawrence Clevenger ,  Carl Radens ,  Kwong Hon Wong ,  Chih-Chao Yang

发明人： Louis Hsu ,  Timothy Dalton ,  Lawrence Clevenger ,  Carl Radens ,  Kwong Hon Wong ,  Chih-Chao Yang

IPC分类号： H01H11/00 ,  H01H65/00

CPC分类号： H01H59/0009 ,  H01H1/20 ,  H01H2001/0084 ,  H01H2001/0089 ,  Y10T29/49105 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T29/49208

摘要： A method of fabricating a MEMS switch that is fully integratable in a semiconductor fabrication line. The method consists of forming two posts, each end thereof terminating in a cap; a rigid movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; forming upper and lower electrode pairs and upper and lower interconnect wiring lines connected and disconnected by the rigid movable conductive plate. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines.

摘要翻译： 一种制造可在半导体制造生产线中完全集成的MEMS开关的方法。 该方法包括形成两个柱，其每端终止于盖中; 刚性可移动导电板，其表面终止于两个相对边缘中的每一个中的环中，所述环松散地连接到引导柱; 形成上下电极对以及由刚性可移动导电板连接和断开的上下互连布线。 导电板向上移动，使两条上部互连线路短路。 相反，当电压施加到下电极对时，导电板向下移动，而上电极对接地，使两个下互连布线短路并打开上布线。

公开(公告)号：US20080079172A1

公开(公告)日：2008-04-03

申请号：US11939671

申请日：2007-11-14

申请人： Louis Hsu ,  Jack Mandelman ,  William Tonti ,  Chih-Chao Yang

发明人： Louis Hsu ,  Jack Mandelman ,  William Tonti ,  Chih-Chao Yang

IPC分类号： H01L23/52

CPC分类号： H01L23/5329 ,  H01L21/7682 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/942 ,  H01L2924/00

摘要： A method for fabricating and back-end-of-line (BEOL) metalization structures includes simultaneous high-k and low-k dielectric regions. An interconnect structure includes a first inter-level dielectric (ILD) layer and a second ILD layer with the first ILD layer underlying the second ILD layer. A plurality of columnar air gaps is formed in the first ILD. The columnar air gap structure is created using a two-phase photoresist material for providing different etching selectivity during subsequent processing.

摘要翻译： 一种用于制造和后端（BEOL）金属化结构的方法包括同时存在的高k和低k电介质区域。 互连结构包括第一层间电介质（ILD）层和具有位于第二ILD层下面的第一ILD层的第二ILD层。 在第一ILD中形成多个柱状气隙。 使用两相光致抗蚀剂材料制造柱状气隙结构，用于在随后的处理期间提供不同的蚀刻选择性。