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    METHOD AND SYSTEM FOR MODIFYING SUBSTRATE RELIEF FEATURES USING ION IMPLANTION
    3.
    发明申请
    METHOD AND SYSTEM FOR MODIFYING SUBSTRATE RELIEF FEATURES USING ION IMPLANTION 有权
    使用离子注入修饰衬底缓冲特征的方法和系统

    公开(公告)号：US20110223546A1

    公开(公告)日：2011-09-15

    申请号：US13046136

    申请日：2011-03-11

    申请人： Ludovic Godet ,  Patrick M. Martin ,  Timothy J. Miller ,  Vikram Singh

    发明人： Ludovic Godet ,  Patrick M. Martin ,  Timothy J. Miller ,  Vikram Singh

    IPC分类号： G03F7/20 ,  B01J19/08

    CPC分类号： H01J37/317 ,  G03F7/40 ,  H01J37/3171 ,  H01J37/3174 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01L21/0273 ,  H01L21/2236 ,  H01L21/263 ,  H01L21/265 ,  H01L29/66787

    摘要： A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.

    摘要翻译： 一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位，并且在处理室中产生等离子体，其具有与衬底的第一侧相邻的等离子体鞘 。 该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面 其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。

    Method and system for modifying substrate relief features using ion implantation
    4.
    发明授权
    Method and system for modifying substrate relief features using ion implantation 有权
    使用离子注入修改底物浮雕特征的方法和系统

    公开(公告)号：US08778603B2

    公开(公告)日：2014-07-15

    申请号：US13046136

    申请日：2011-03-11

    申请人： Ludovic Godet ,  Patrick M. Martin ,  Timothy J. Miller ,  Vikram Singh

    发明人： Ludovic Godet ,  Patrick M. Martin ,  Timothy J. Miller ,  Vikram Singh

    IPC分类号： G21G1/10

    CPC分类号： H01J37/317 ,  G03F7/40 ,  H01J37/3171 ,  H01J37/3174 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01L21/0273 ,  H01L21/2236 ,  H01L21/263 ,  H01L21/265 ,  H01L29/66787

    摘要： A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.

    摘要翻译： 一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位，并且在处理室中产生等离子体，其具有与衬底的第一侧相邻的等离子体鞘 。 该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面 其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。

    REDUCED IMPLANT VOLTAGE DURING ION IMPLANTATION
    5.
    发明申请
    REDUCED IMPLANT VOLTAGE DURING ION IMPLANTATION 审中-公开
    离子植入期间减少的植入电压

    公开(公告)号：US20100084583A1

    公开(公告)日：2010-04-08

    申请号：US12245938

    申请日：2008-10-06

    申请人： Christopher R. Hatem ,  Ludovic Godet

    发明人： Christopher R. Hatem ,  Ludovic Godet

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/304 ,  H01J2237/30433 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

    摘要： A method for ion implantation is disclosed which includes decreasing the implant energy level as the implant process is ongoing. In this way, either a box-like profile or a profile with higher retained dose can be achieved, enabling enhanced activation at the same junction depth. In one embodiment, the initial implant energy is used to implant about 25% of the dose. The implant energy level is then reduced and an additional 50% of the dose is implanted. The implant energy is subsequently decreased again and the remainder of the dose is implanted. The initial portion of the dose can optionally be performed at cold, such as cryogenic temperatures, to maximize amorphization of the substrate.

    摘要翻译： 公开了一种用于离子注入的方法，其包括当植入过程正在进行时降低植入能量水平。 以这种方式，可以实现具有更高保留剂量的盒状轮廓或轮廓，使得能够在相同的结深处增强激活。 在一个实施例中，初始植入能量用于植入约25％的剂量。 然后植入能量水平降低，另外50％的剂量被植入。 随后植入能量再次减少，并且植入其余的剂量。 剂量的初始部分可以任选地在冷的温度下进行，例如低温，以使底物的非晶化最大化。

    USJ TECHNIQUES WITH HELIUM-TREATED SUBSTRATES
    6.
    发明申请
    USJ TECHNIQUES WITH HELIUM-TREATED SUBSTRATES 有权

    公开(公告)号：US20100041219A1

    公开(公告)日：2010-02-18

    申请号：US12533550

    申请日：2009-07-31

    申请人： Christopher R. HATEM ,  Ludovic Godet

    发明人： Christopher R. HATEM ,  Ludovic Godet

    IPC分类号： H01L21/265

    CPC分类号： H01L21/26586 ,  H01L21/26506 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.

    Method to generate molecular ions from ions with a smaller atomic mass
    9.
    发明授权
    Method to generate molecular ions from ions with a smaller atomic mass 有权
    从原子质量较小的离子产生分子离子的方法

    公开(公告)号：US09024273B2

    公开(公告)日：2015-05-05

    申请号：US12763652

    申请日：2010-04-20

    申请人： Ludovic Godet ,  Svetlana Radovanov ,  Christopher R. Hatem

    发明人： Ludovic Godet ,  Svetlana Radovanov ,  Christopher R. Hatem

    IPC分类号： H01J37/08 ,  H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/08

    摘要： An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is ionized in an ion source. The first species ions and/or first species combine to form molecular ions. These molecular ions may be transported to a second chamber, which may be an arc chamber or diffusion chamber, and are extracted. The molecular ions may have a larger atomic mass than the first species or first species ions. A second species also may be ionized with the first species to form molecular ions. In one instance, the first and second species are both molecules.

    摘要翻译： 公开了一种产生分子离子的装置和产生分子离子的方法。 至少第一种在离子源中离子化。 第一种离子和/或第一种结合形成分子离子。 这些分子离子可以被输送到可以是电弧室或扩散室的第二室，并被提取。 分子离子可以具有比第一种或第一种离子更大的原子质量。 第二种也可以用第一种离子化形成分子离子。 在一种情况下，第一种和第二种都是分子。