MEMS microphone module and manufacturing process thereof
    1.
    发明授权
    MEMS microphone module and manufacturing process thereof 有权
    MEMS麦克风模块及其制造工艺

    公开(公告)号:US09445212B2

    公开(公告)日:2016-09-13

    申请号:US12050368

    申请日:2008-03-18

    CPC classification number: H04R31/00 H04R19/016

    Abstract: A micro-electro-mechanical system (MEMS) microphone module and a manufacturing process thereof are described. A thickness of a transparent temporary cover plate temporarily disposed in a conventional plastic package structure is adjusted. After a mold for a plastic protector is formed, an UV ray is utilized to irradiate the mold to reduce adherence on the temporary cover plate and a back surface of the MEMS acoustic wave sensing chip. Then, the temporary cover plate is removed, and the left space left is the main source for the back-volume of the MEMS microphone. Finally, a tag is covered on the plastic protector, so as to define the whole back-volume and form a closed back-volume. In the above-mentioned process, the size of the back-volume is the same as an area of the whole MEMS microphone chip. In addition, the back-volume can be defined.

    Abstract translation: 微机电系统(MEMS)麦克风模块及其制造过程被描述。 临时设置在传统的塑料封装结构中的透明临时盖板的厚度被调节。 在形成用于塑料保护器的模具之后,使用紫外线照射模具以减少临时盖板和MEMS声波感测芯片的背面的粘附。 然后,移除临时盖板,剩下的剩余空间是用于MEMS麦克风的后部体积的主要来源。 最后,在塑料保护器上覆盖一个标签,以便定义整个后部体积并形成封闭的后部体积。 在上述处理中,背面体积的大小与整个MEMS麦克风芯片的面积相同。 此外,可以定义后卷。

    MEMS MICROPHONE MODULE AND MANUFACTURING PROCESS THEREOF
    2.
    发明申请
    MEMS MICROPHONE MODULE AND MANUFACTURING PROCESS THEREOF 有权
    MEMS麦克风模块及其制造工艺

    公开(公告)号:US20090129622A1

    公开(公告)日:2009-05-21

    申请号:US12050368

    申请日:2008-03-18

    CPC classification number: H04R31/00 H04R19/016

    Abstract: A micro-electro-mechanical system (MEMS) microphone module and a manufacturing process thereof are described. A thickness of a transparent temporary cover plate temporarily disposed in a conventional plastic package structure is adjusted. After a mold for a plastic protector is formed, an UV ray is utilized to irradiate the mold to reduce adherence on the temporary cover plate and a back surface of the MEMS acoustic wave sensing chip. Then, the temporary cover plate is removed, and the left space left is the main source for the back-volume of the MEMS microphone. Finally, a tag is covered on the plastic protector, so as to define the whole back-volume and form a closed back-volume. In the above-mentioned process, the size of the back-volume is the same as an area of the whole MEMS microphone chip. In addition, the back-volume can be defined.

    Abstract translation: 微机电系统(MEMS)麦克风模块及其制造过程被描述。 临时设置在传统的塑料封装结构中的透明临时盖板的厚度被调节。 在形成用于塑料保护器的模具之后,使用紫外线照射模具以减少临时盖板和MEMS声波感测芯片的背面的粘附。 然后,移除临时盖板,剩下的剩余空间是用于MEMS麦克风的后部体积的主要来源。 最后,在塑料保护器上覆盖一个标签,以便定义整个后部体积并形成封闭的后部体积。 在上述处理中,背面体积的大小与整个MEMS麦克风芯片的面积相同。 此外,可以定义后卷。

    Wafer level sensing package and manufacturing process thereof
    3.
    发明授权
    Wafer level sensing package and manufacturing process thereof 有权
    晶圆级感测封装及其制造工艺

    公开(公告)号:US07915065B2

    公开(公告)日:2011-03-29

    申请号:US12331539

    申请日:2008-12-10

    Abstract: A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.

    Abstract translation: 描述了晶片级感测封装及其制造工艺。 该过程包括提供具有感测芯片的晶片,其中每个感测芯片具有感测区域和焊盘; 在晶片表面上形成应力释放层; 在应力释放层上包覆光致抗蚀剂层; 图案化光致抗蚀剂层以暴露垫和应力释放层的一部分,而不暴露感测区域的开口区域; 在由光致抗蚀剂层暴露的应力释放层的部分上形成再分布焊盘的导电金属层; 去除光致抗蚀剂层; 在所述应力释放层和所述导电金属层上形成再包覆光致抗蚀剂层; 在再分布的焊盘区域上方的再包层光致抗蚀剂层中形成孔; 以及在所述孔中形成导电凸块以电连接到所述导电金属层。

    WAFER LEVEL SENSING PACKAGE AND MANUFACTURING PROCESS THEREOF
    4.
    发明申请
    WAFER LEVEL SENSING PACKAGE AND MANUFACTURING PROCESS THEREOF 有权
    WAFER水平感测包装及其制造工艺

    公开(公告)号:US20090124074A1

    公开(公告)日:2009-05-14

    申请号:US12331539

    申请日:2008-12-10

    Abstract: A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.

    Abstract translation: 描述了晶片级感测封装及其制造工艺。 该过程包括提供具有感测芯片的晶片,其中每个感测芯片具有感测区域和焊盘; 在晶片表面上形成应力释放层; 在应力释放层上包覆光致抗蚀剂层; 图案化光致抗蚀剂层以暴露垫和应力释放层的一部分,而不暴露感测区域的开口区域; 在由光致抗蚀剂层暴露的应力释放层的部分上形成再分布焊盘的导电金属层; 去除光致抗蚀剂层; 在所述应力释放层和所述导电金属层上形成再包覆光致抗蚀剂层; 在再分布的焊盘区域上方的再包层光致抗蚀剂层中形成孔; 并且在所述孔中形成导电凸块以电连接到所述导电金属层。

    SENSING DEVICE AND FABRICATING METHOD THEREOF
    5.
    发明申请
    SENSING DEVICE AND FABRICATING METHOD THEREOF 审中-公开
    感应装置及其制作方法

    公开(公告)号:US20130153418A1

    公开(公告)日:2013-06-20

    申请号:US13443902

    申请日:2012-04-11

    CPC classification number: B81C1/00293 B81C2203/0145 B81C2203/019 G01D11/26

    Abstract: A sensing device is provided. A suction port of a chamber is sealed by using a gas sealing layer with a gas sealing filter. The gas sealing filter has a plurality of one-way passes. The one-way passes have a width in a range of several nanometers to several hundred nanometers. A gas molecular exhausts to the outside of the chamber through the one-way passes. Owing to preventing the material of gas sealing layer from flowing into the chamber by the gas sealing filter, superior sealing performance is achieved as compared to those adopting solder or sealing material, thereby facilitating control of the condition in the chamber.

    Abstract translation: 提供感测装置。 通过使用具有气体密封过滤器的气体密封层来密封腔室的吸入口。 气体密封过滤器具有多个单程通道。 单向通道的宽度在几纳米到几百纳米的范围内。 气体分子通过单程通过排气到室外。 由于通过气体密封过滤器防止气体密封层的材料流入室,与使用焊料或密封材料的密封性相比,实现了优异的密封性能,从而有助于控制室内的状态。

    Device structure with preformed ring and method therefor
    6.
    发明授权
    Device structure with preformed ring and method therefor 有权
    具有预制环的装置结构及其方法

    公开(公告)号:US07791181B2

    公开(公告)日:2010-09-07

    申请号:US12014636

    申请日:2008-01-15

    Abstract: A device structure with preformed ring includes a sensor chip and a ring disposed and surrounded on periphery of sensitive area of an active surface thereof. The device structure with preformed ring may batchly bind and electrically connect to a carrier by a way of two-dimension array, and then a packaging process is performed. During the packaging process, the top portion of the ring can be used to against the inner side of a packaging mold, so as to stop the packaging material covering the device at outside of the ring and stick with the ring. Therefore, an opening is formed on the sensitive area surface of the device. Depending on the ring, the extra process for eliminating the packaging material on the sensitive area surface can be avoided in the conventional process.

    Abstract translation: 具有预成型环的装置结构包括传感器芯片和设置并围绕其活性表面的敏感区域的周围的环。 具有预制环的装置结构可以通过二维阵列的方式分批地结合和电连接到载体,然后进行包装处理。 在包装过程中,环的顶部可以用于抵靠包装模具的内侧,以便在环的外侧停止包裹该装置的包装材料并且与环一起粘着。 因此,在装置的敏感区域表面上形成开口。 根据环,在常规方法中可以避免用于消除敏感区域表面上的包装材料的额外处理。

    Wafer level sensing package and manufacturing process thereof
    7.
    发明申请
    Wafer level sensing package and manufacturing process thereof 审中-公开
    晶圆级感测封装及其制造工艺

    公开(公告)号:US20090121299A1

    公开(公告)日:2009-05-14

    申请号:US12073392

    申请日:2008-03-05

    Abstract: A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer.

    Abstract translation: 描述了晶片级感测封装及其制造工艺。 该过程包括提供具有感测芯片的晶片,其中每个感测芯片具有感测区域和焊盘; 在晶片表面上形成应力释放层; 在应力释放层上包覆光致抗蚀剂层; 图案化光致抗蚀剂层以暴露垫和应力释放层的一部分,而不暴露感测区域的开口区域; 在由光致抗蚀剂层暴露的应力释放层的部分上形成再分布焊盘的导电金属层; 去除光致抗蚀剂层; 在所述应力释放层和所述导电金属层上形成再包覆光致抗蚀剂层; 在再分布的焊盘区域上方的再包层光致抗蚀剂层中形成孔; 以及在所述孔中形成导电凸块以电连接到所述导电金属层。

    STRUCTURE AND PROCESS FOR MICROELECTROMECHANICAL SYSTEM-BASED SENSOR
    8.
    发明申请
    STRUCTURE AND PROCESS FOR MICROELECTROMECHANICAL SYSTEM-BASED SENSOR 有权
    基于微电子系统的传感器的结构与工艺

    公开(公告)号:US20130099331A1

    公开(公告)日:2013-04-25

    申请号:US13327681

    申请日:2011-12-15

    CPC classification number: B81B7/007 B81B2207/097 H01L2924/0002 H01L2924/00

    Abstract: A structure and a process for a microelectromechanical system (MEMS)-based sensor are provided. The structure for a MEMS-based sensor includes a substrate chip. A first insulating layer covers a top surface of the substrate chip. A device layer is disposed on a top surface of the first insulating layer. The device layer includes a periphery region and a sensor component region. The periphery region and a sensor component region have an air trench therebetween. The component region includes an anchor component and a moveable component. A second insulating layer is disposed on a top surface of the device layer, bridging the periphery region and a portion of the anchor component. A conductive pattern is disposed on the second insulating layer, electrically connecting to the anchor component.

    Abstract translation: 提供了一种用于基于微机电系统(MEMS)的传感器的结构和工艺。 基于MEMS的传感器的结构包括衬底芯片。 第一绝缘层覆盖衬底芯片的顶表面。 器件层设置在第一绝缘层的顶表面上。 器件层包括外围区域和传感器部件区域。 周边区域和传感器部件区域之间具有空气沟槽。 组件区域包括锚构件和可移动构件。 第二绝缘层设置在器件层的顶表面上,桥接外围区域和锚固部件的一部分。 导电图案设置在第二绝缘层上,与导电组件电连接。

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