公开(公告)号：US20030015716A1

公开(公告)日：2003-01-23

申请号：US09905863

申请日：2001-07-17

Applicant: MOTOROLA, INC.

Inventor： George Valliath

IPC: H01L021/28 ,  H01L021/3205 ,  H01L033/00 ,  H01L027/15 ,  H01L031/12

CPC classification number: H01L31/1852 ,  G02B6/43 ,  H01L27/0605 ,  H01L27/0688 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1864 ,  H01S5/0261 ,  H01S5/0262 ,  H04B10/803 ,  Y02E10/544 ,  Y02P70/521

Abstract: An optical bus communicates data between external devices by sending and receiving emissions between an optical source and an optical detector within an enclosure. Each optical source may be paired with an optical detector to form a source-detector pair. The optical source and the optical detector can be formed within a semiconductor structure which forms at least part of the enclosure. The semiconductor structure includes high quality epitaxial layers of monocrystalline materials that can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract translation: 光学总线通过发送和接收光源和外壳内的光学检测器之间的发射来在外部设备之间传送数据。 每个光源可以与光学检测器配对以形成源 - 检测器对。 光源和光学检测器可以形成在形成外壳的至少一部分的半导体结构内。 该半导体结构包括可以通过形成用于生长单晶层的柔性衬底来生长覆盖单晶衬底例如大硅晶片的高质量的单晶材料外延层。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

公开(公告)号：US20030102473A1

公开(公告)日：2003-06-05

申请号：US09929024

申请日：2001-08-15

Applicant: MOTOROLA, INC.

Inventor： Marc Chason ,  George Valliath ,  William J. Ooms

IPC: H01L021/00 ,  H01L029/12 ,  H01L033/00 ,  H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: H01S5/0261 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L33/005 ,  H01L33/0066 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/183

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline layer of silicon formed on a low cost substrate, such as glass. The growth of the monocrystalline materials is accomplished by forming a compliant substrate for growing the monocrystalline materials. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon layer is taken care of by the amorphous interface layer.

Abstract translation: 高质量的单晶材料外延层可以生长在低成本基底如玻璃上形成的单晶硅层上。 单晶材料的生长通过形成用于生长单晶材料的柔性衬底来实现。 容纳缓冲层包括由氧化硅的非晶界面层与硅隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅层之间的任何晶格失配。

公开(公告)号：US20030015134A1

公开(公告)日：2003-01-23

申请号：US09906782

申请日：2001-07-18

Applicant: MOTOROLA, INC.

Inventor： Aroon Tungare ,  George Valliath

IPC: C30B028/12 ,  C30B023/00 ,  C30B028/14 ,  C30B025/00

CPC classification number: H01L27/15 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L2924/0002 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/183 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00

Abstract: Semiconductor structures and a method for fabricating semiconductor structures optimized for use in free space optical interconnect systems are disclosed. The semiconductor structures includes a optical component die edge mounted on a carrier structure. The die is formed using high quality epitaxial layers of monocrystalline compound semiconductor materials grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the compound semiconductor monocrystalline layers. The die is edge mounted to the carrier structure such that light beams emitted or detected by devices on the die are parallel to the surface of the carrier structure.

Abstract translation: 公开了半导体结构和用于制造优化用于自由空间光互连系统的半导体结构的方法。 半导体结构包括安装在载体结构上的光学元件裸片边缘。 使用通过形成用于生长化合物半导体单晶层的柔性衬底生长在诸如大硅晶片的单晶衬底上生长的单晶化合物半导体材料的高质量外延层来形成管芯。 模具边缘安装到载体结构，使得由模具上的装置发射或检测的光束平行于载体结构的表面。

公开(公告)号：US20040151491A1

公开(公告)日：2004-08-05

申请号：US10357594

申请日：2003-02-04

Applicant: Motorola, Inc.

Inventor： Zane Coleman ,  Kevin W. Jelley ,  Zili Li ,  George Valliath ,  Roger Ady ,  William Groves

IPC: G03B013/02

CPC classification number: G03B13/02

Abstract: A passive multi-indicia visual position indicator (30) is used to visually indicate to a user (11) when the user occupies a position that comprises a predetermined desired position with respect to a given object (10). The indicator can be comprised of a single integral structure or can be comprised of a plurality portions. The indicator can comprise any of a wide variety of color and/or graphics related imagery. In one embodiment, the indicator has an annularly-shaped form factor. In one embodiment, the indicator comprises an applique that can be provided in a retrofitting kit that includes appropriate corresponding instructions.

Abstract translation: 当用户占据相对于给定对象（10）的预定期望位置的位置时，被动多标记视觉位置指示器（30）用于向用户（11）可视地指示。 指示器可以由单个整体结构组成，或者可以由多个部分组成。 指示器可以包括各种颜色和/或图形相关图像中的任何一种。 在一个实施例中，指示器具有环形形状因子。 在一个实施例中，指示器包括可以在包括适当的对应指令的改装套件中提供的贴花。

公开(公告)号：US20030020091A1

公开(公告)日：2003-01-30

申请号：US09911691

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Aroon Tungare ,  Daniel Gamota ,  George Valliath

IPC: H01L029/04

CPC classification number: H01S5/0261 ,  H01L27/15 ,  H01L31/1035 ,  H01S5/021 ,  H01S5/0262 ,  H01S5/183 ,  H01S2301/173

Abstract: A system for use as an optical switch is disclosed. The system includes light emitting devices formed using high quality epitaxial layers of compound semiconductor materials overlying an accommodating buffer layer on a silicon wafer. The system also includes a tunable electro-optic substrate over the compound semiconductor material, and a polarization beam splitter over the electro-optic substrate. The tunable electro-optic substrate is used to change the polarization of the light emitted from the light emitting devices. The polarization beam splitter is used to guide the light beam, depending on the polarization, in two different directions. The system, together, acts as an optical switch.

Abstract translation: 公开了一种用作光开关的系统。 该系统包括使用覆盖硅晶片上的容纳缓冲层的化合物半导体材料的高质量外延层形成的发光器件。 该系统还包括在化合物半导体材料上的可调电光基底，以及在电光基底上的偏振分束器。 可调谐电光基板用于改变从发光器件发射的光的偏振。 偏振分束器用于根据极化在两个不同的方向上引导光束。 该系统一起作为光开关。

公开(公告)号：US20040095311A1

公开(公告)日：2004-05-20

申请号：US10299289

申请日：2002-11-19

Applicant: Motorola, Inc.

Inventor： Mark Tarlton ,  Prakairut Tarlton ,  George Valliath

IPC: G09G005/00 ,  G09G005/08

CPC classification number: G06F3/016

Abstract: A body part position detector 12 (or detectors) provides information regarding the position of a predetermined body part to a virtual image tactile-entry information interface generator 12. The latter constructs a virtual image of the information interface that is proximal to the body part and that is appropriately scaled and oriented to match a viewer's point of view with respect to the body part. A display 13 then provides the image to the viewer. By providing the image of the information interface in close proximity to the body part, the viewer will experience an appropriate haptic sensation upon interacting with the virtual image.

Abstract translation: 身体部位位置检测器12（或检测器）将关于预定身体部位的位置的信息提供给虚拟图像触觉输入信息界面生成器12.后者构建靠近身体部分的信息界面的虚拟图像， 其被适当地缩放和定向以匹配观看者相对于身体部分的观点。 显示器13然后将图像提供给观看者。 通过提供靠近身体部位的信息界面的图像，观众在与虚拟图像交互时将经历适当的触觉感觉。

公开(公告)号：US20030113949A1

公开(公告)日：2003-06-19

申请号：US09921894

申请日：2001-08-06

Applicant: MOTOROLA, INC.

Inventor： George Valliath

IPC: H01L021/00 ,  H01L033/00

CPC classification number: H01L27/156 ,  H01L33/0066

Abstract: A multi-color, solid-state lighting device includes a stack of two or more panels, each panel having an array of light emitting semiconductor components formed thereon. To form the light emitting components, high quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline layer of silicon formed on a low cost substrate, such as glass. The growth of the monocrystalline materials is accomplished by forming a compliant substrate for growing the monocrystalline materials. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.

Abstract translation: 多色固体照明装置包括两个或更多个面板的堆叠，每个面板具有形成在其上的发光半导体组件的阵列。 为了形成发光部件，可以生长高质量的单晶材料外延层，覆盖在低成本基板（例如玻璃）上形成的硅单晶层。 单晶材料的生长通过形成用于生长单晶材料的柔性衬底来实现。 容纳缓冲层包括由氧化硅的非晶界面层与硅隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。

公开(公告)号：US20030026310A1

公开(公告)日：2003-02-06

申请号：US09921895

申请日：2001-08-06

Applicant: MOTOROLA, INC.

Inventor： George Valliath

IPC: H01S005/00

CPC classification number: H01L31/125 ,  G02F1/133603 ,  G02F2001/13324 ,  G02F2001/133626 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02678 ,  H01L21/02686 ,  H01L31/153 ,  H01L31/1852 ,  H01S5/0208 ,  H01S5/0213 ,  H01S5/0261 ,  H01S5/183 ,  H01S2301/173 ,  Y02E10/544 ,  Y02P70/521

Abstract: A lighting device suitable for low power applications, such as backlighting a liquid crystal display (LCD), includes plural light emitting components and photovoltaic elements formed on a monocrystalline silicon substrate. To fabricate the lighting device, high quality epitaxial layers of monocrystalline materials can be grown overlying the silicon substrate by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer.

Abstract translation: 适用于诸如液晶显示器（LCD）背光的低功率应用的照明装置包括形成在单晶硅衬底上的多个发光部件和光电元件。 为了制造照明装置，可以通过形成用于生长单晶层的柔性衬底，生长覆盖硅衬底的高质量的单晶材料外延层。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。

公开(公告)号：US20030020078A1

公开(公告)日：2003-01-30

申请号：US09911444

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Tomasz Klosowiak ,  Kevin Jelley ,  George Valliath ,  Barbara Foley Barenburg ,  Daniel Gamota

IPC: H01L021/00 ,  H01L033/00 ,  H01L027/15

CPC classification number: H01L27/15 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01S5/021 ,  H01S5/0261 ,  H01S2301/173 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Optical processing layers can be placed on monocrystalline layers to process photons produced in the monocrystalline layers.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 光学处理层可以放置在单晶层上以处理在单晶层中产生的光子。