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1.发明授权公开(公告)号：US07798096B2
公开(公告)日：2010-09-21
申请号：US11381970
申请日：2006-05-05
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , C23C16/45508 , C23C16/45574 , C23C16/4583 , C23C16/46 , C23C16/509
摘要： A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance.
摘要翻译： 批处理室包括：室壳体，用于在处理区域中容纳一批衬底的衬底舟和用于激发加工气体种类的激发组件。 激发组件定位在腔室内，并且可以包括等离子体，UV或离子辅助。
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2.发明申请公开(公告)号：US20120192792A1
公开(公告)日：2012-08-02
申请号：US13445354
申请日：2012-04-12
IPC分类号： C23C16/458 , C23C16/50
CPC分类号： H01J37/32009 , C23C16/45508 , C23C16/45574 , C23C16/4583 , C23C16/46 , C23C16/509
摘要： CVD and ALD methods of using a batch processing chamber to process substrates are described. A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance.
摘要翻译： 描述了使用批处理室来处理衬底的CVD和ALD方法。 批处理室包括：室壳体，用于在处理区域中容纳一批衬底的衬底舟和用于激发加工气体种类的激发组件。 激发组件定位在腔室内，并且可以包括等离子体，UV或离子辅助。
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公开(公告)号：US07921803B2
公开(公告)日：2011-04-12
申请号：US11859080
申请日：2007-09-21
申请人： Joseph Yudovsky , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
发明人： Joseph Yudovsky , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
IPC分类号： B05C11/00
CPC分类号： H01L21/67248
摘要： The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.
摘要翻译： 本发明通常提供了半导体处理室中非接触式温度测量的方法和装置。 特别地，本发明提供了在低于500℃的温度下进行非接触式温度测量的方法和装置。本发明的一个实施例提供了一种半导体衬底的处理装置。 该装置包括目标部件，其包括比一个或多个基板更高的发射率的材料。
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公开(公告)号：US20090078198A1
公开(公告)日：2009-03-26
申请号：US11859080
申请日：2007-09-21
申请人： JOSEPH YUDOVSKY , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
发明人： JOSEPH YUDOVSKY , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
CPC分类号： H01L21/67248
摘要： The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.
摘要翻译： 本发明通常提供了半导体处理室中非接触式温度测量的方法和装置。 特别地，本发明提供了在低于500℃的温度下进行非接触式温度测量的方法和装置。本发明的一个实施例提供了一种半导体衬底的处理装置。 该装置包括目标部件，其包括比一个或多个基板更高的发射率的材料。
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5.发明申请METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM 审中-公开用于电子薄膜原子层沉积的化学品的激光的方法和装置公开(公告)号：US20070259111A1
公开(公告)日：2007-11-08
申请号：US11464121
申请日：2006-08-11
申请人： Kaushal K. Singh , Maitreyee Mahajani , Steve G. Ghanayem , Joseph Yudovsky , Brendan McDougall
发明人： Kaushal K. Singh , Maitreyee Mahajani , Steve G. Ghanayem , Joseph Yudovsky , Brendan McDougall
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , C23C16/0209 , C23C16/0245 , C23C16/045 , C23C16/34 , C23C16/403 , C23C16/405 , C23C16/4405 , C23C16/45504 , C23C16/45508 , C23C16/45574 , C23C16/45591 , C23C16/4583 , C23C16/46 , C23C16/482 , C23C16/509
摘要： The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.
摘要翻译： 本发明通常提供一种用于沉积材料的方法，更具体地说，本发明的实施方案涉及利用光激发技术沉积阻挡层，种子层，导电材料和电介质材料的化学气相沉积方法和原子层沉积方法。 本发明的实施方案通常提供了辅助方法和装置的方法，其中可以进行辅助过程以提供均匀沉积的材料。
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6.发明申请公开(公告)号：US20070259110A1
公开(公告)日：2007-11-08
申请号：US11381970
申请日：2006-05-05
CPC分类号： H01J37/32009 , C23C16/45508 , C23C16/45574 , C23C16/4583 , C23C16/46 , C23C16/509
摘要： A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance.
摘要翻译： 批处理室包括：室壳体，用于在处理区域中容纳一批衬底的衬底舟和用于激发加工气体种类的激发组件。 激发组件定位在腔室内，并且可以包括等离子体，UV或离子辅助。
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公开(公告)号：US20070084408A1
公开(公告)日：2007-04-19
申请号：US11381966
申请日：2006-05-05
申请人： Joseph Yudovsky , Tai Ngo , Cesar Tejamo , Maitreyee Mahajani , Brendan McDougall , Yi-Chiau Huang , Robert Cook , Yeong Kim , Alexander Tam , Adam Brailove , Steve Ghanayem
发明人： Joseph Yudovsky , Tai Ngo , Cesar Tejamo , Maitreyee Mahajani , Brendan McDougall , Yi-Chiau Huang , Robert Cook , Yeong Kim , Alexander Tam , Adam Brailove , Steve Ghanayem
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/45578 , H01L21/67109
摘要： An apparatus for batch processing of a wafer is disclosed. In one embodiment the batch processing apparatus includes a bell jar furnace having a diffuser disposed between gas inlets and the substrate positioned within the furnace to direct flows within the chamber around the perimeter of the substrate.
摘要翻译： 公开了一种用于批处理晶片的设备。 在一个实施例中，批处理设备包括钟罩式炉，其具有设置在气体入口之间的扩散器和位于炉内的基板，以引导室内围绕衬底周边的流动。
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公开(公告)号：US07897208B2
公开(公告)日：2011-03-01
申请号：US12788131
申请日：2010-05-26
CPC分类号： C23C16/402 , C23C16/45534
摘要： The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
摘要翻译： 本发明通常包括二氧化硅原子层沉积方法。 通过提供吡啶作为催化剂，可以在低温下沉积时使用水作为氧化源。 在将基底暴露于水之前，可以将底物暴露于吡啶浸泡过程。 此外，水可以通过单独的导管与吡啶共同流到室中，以减少进入室之前的相互作用。 或者，吡啶可以与不与吡啶反应的硅前体共流。
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公开(公告)号：US07749574B2
公开(公告)日：2010-07-06
申请号：US11559491
申请日：2006-11-14
CPC分类号： C23C16/402 , C23C16/45534
摘要： The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
摘要翻译： 本发明通常包括二氧化硅原子层沉积方法。 通过提供吡啶作为催化剂，可以在低温下沉积时使用水作为氧化源。 在将基底暴露于水之前，可以将底物暴露于吡啶浸泡过程。 此外，水可以通过单独的导管与吡啶共同流到室中，以减少进入室之前的相互作用。 或者，吡啶可以与不与吡啶反应的硅前体共流。
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公开(公告)号：US20080113097A1
公开(公告)日：2008-05-15
申请号：US11559491
申请日：2006-11-14
IPC分类号： C23C16/40
CPC分类号： C23C16/402 , C23C16/45534
摘要： The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
摘要翻译： 本发明通常包括二氧化硅原子层沉积方法。 通过提供吡啶作为催化剂，可以在低温下沉积时使用水作为氧化源。 在将基底暴露于水之前，可以将底物暴露于吡啶浸泡过程。 此外，水可以通过单独的导管与吡啶共同流到室中，以减少进入室之前的相互作用。 或者，吡啶可以与不与吡啶反应的硅前体共流。
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