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公开(公告)号：US20090078198A1
公开(公告)日：2009-03-26
申请号：US11859080
申请日：2007-09-21
申请人： JOSEPH YUDOVSKY , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
发明人： JOSEPH YUDOVSKY , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
CPC分类号： H01L21/67248
摘要： The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.
摘要翻译： 本发明通常提供了半导体处理室中非接触式温度测量的方法和装置。 特别地，本发明提供了在低于500℃的温度下进行非接触式温度测量的方法和装置。本发明的一个实施例提供了一种半导体衬底的处理装置。 该装置包括目标部件，其包括比一个或多个基板更高的发射率的材料。
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公开(公告)号：US07921803B2
公开(公告)日：2011-04-12
申请号：US11859080
申请日：2007-09-21
申请人： Joseph Yudovsky , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
发明人： Joseph Yudovsky , Brendan McDougall , Ravi Jallepally , Yi-Chiau Huang , Maitreyee Mahajani , Kevin Griffin , Andrew C. Sherman
IPC分类号： B05C11/00
CPC分类号： H01L21/67248
摘要： The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.
摘要翻译： 本发明通常提供了半导体处理室中非接触式温度测量的方法和装置。 特别地，本发明提供了在低于500℃的温度下进行非接触式温度测量的方法和装置。本发明的一个实施例提供了一种半导体衬底的处理装置。 该装置包括目标部件，其包括比一个或多个基板更高的发射率的材料。
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公开(公告)号：US20160027675A1
公开(公告)日：2016-01-28
申请号：US14774377
申请日：2014-03-14
申请人： Abraham RAVID , Kevin GRIFFIN , Joseph YUDOVSKY , Kaushal GANGAKHEDKAR , Dmitry A. DZILNO , Alex MINKOVICH
发明人： Abraham Ravid , Kevin Griffin , Joseph Yudovsky , Kaushal Gangakhedkar , Dmitry A. Dzilno , Alex Minkovich
IPC分类号： H01L21/67 , C23C16/458 , C23C16/52 , H01L21/687 , C23C16/455
CPC分类号： H01L21/67259 , C23C16/45544 , C23C16/4584 , C23C16/52 , H01L21/67248 , H01L21/68764 , H01L21/68771
摘要： Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.
摘要翻译： 描述了测量和控制基座组件和气体分配组件之间的间隙的装置和方法。 还描述了用于晶片转印目的的位置控制和温度控制的装置和方法。
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公开(公告)号：US20150345022A1
公开(公告)日：2015-12-03
申请号：US14435070
申请日：2014-02-20
IPC分类号： C23C16/52 , H01L21/285 , H01L21/66 , H01L21/02 , C23C16/455 , C23C16/458
CPC分类号： C23C16/52 , C23C16/45544 , C23C16/45551 , C23C16/4583 , H01L21/0228 , H01L21/0262 , H01L21/28556 , H01L22/10
摘要： Described are apparatus and methods for processing a semiconductor wafer in which the gap between the wafer surface and the gas distribution assembly remains uniform and of known thickness. The wafer is positioned within a susceptor assembly and the assembly is lifted toward the gas distribution assembly using actuators. The wafer can be lifted toward the gas distribution assembly by creating a fluid bearing below and/or above the wafer.
摘要翻译： 描述了其中晶片表面和气体分配组件之间的间隙保持均匀并具有已知厚度的半导体晶片的处理装置和方法。 晶片定位在基座组件内，并且使用致动器将组件提升到气体分配组件。 可以通过在晶片下方和/或上方产生流体轴承来将晶片提升到气体分配组件。
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公开(公告)号：US09617640B2
公开(公告)日：2017-04-11
申请号：US14435070
申请日：2014-02-20
IPC分类号： C23C16/00 , C23C16/52 , C23C16/455 , C23C16/458 , H01L21/66 , H01L21/02 , H01L21/285
CPC分类号： C23C16/52 , C23C16/45544 , C23C16/45551 , C23C16/4583 , H01L21/0228 , H01L21/0262 , H01L21/28556 , H01L22/10
摘要： Described are apparatus and methods for processing a semiconductor wafer in which the gap between the wafer surface and the gas distribution assembly remains uniform and of known thickness. The wafer is positioned within a susceptor assembly and the assembly is lifted toward the gas distribution assembly using actuators. The wafer can be lifted toward the gas distribution assembly by creating a fluid bearing below and/or above the wafer.
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公开(公告)号：US20160027674A1
公开(公告)日：2016-01-28
申请号：US14774031
申请日：2014-03-14
申请人： Kevin GRIFFIN , Joseph YUDOVSKY
发明人： Kevin Griffin , Joseph Yudovsky
IPC分类号： H01L21/67 , C23C16/52 , C23C16/458 , H01L21/66 , C23C16/455
CPC分类号： H01L21/67248 , C23C16/45544 , C23C16/45551 , C23C16/45578 , C23C16/4584 , C23C16/52 , H01L21/67253 , H01L22/12
摘要： Apparatus and methods for processing a semiconductor wafer in which an optical sensor positioned in the gas distribution assembly measures temperature and/or a film parameter during deposition.
摘要翻译： 用于处理半导体晶片的装置和方法，其中位于气体分配组件中的光学传感器在沉积期间测量温度和/或膜参数。
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7.发明申请公开(公告)号：US20150376782A1
公开(公告)日：2015-12-31
申请号：US14471884
申请日：2014-08-28
申请人： Kevin Griffin , Abraham Ravid , Alex Minkovich , Somesh Khandelwal , Joseph Yudovsky , Todd Egan
发明人： Kevin Griffin , Abraham Ravid , Alex Minkovich , Somesh Khandelwal , Joseph Yudovsky , Todd Egan
IPC分类号： C23C16/458 , C23C16/52 , G01D5/24 , C23C16/455
CPC分类号： C23C16/4584 , C23C16/45544 , C23C16/52 , G01D5/24
摘要： Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.
摘要翻译： 描述了工艺夹具和基座之间的尺寸控制和监控的装置和方法以及晶片的位置确定。
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8.发明申请公开(公告)号：US20150048739A1
公开(公告)日：2015-02-19
申请号：US14460683
申请日：2014-08-15
申请人： John C. Forster , Joseph Yudovsky , Garry K. Kwong , Tai T. Ngo , Kevin Griffin , Kenneth S. Collins , Ren Liu
发明人： John C. Forster , Joseph Yudovsky , Garry K. Kwong , Tai T. Ngo , Kevin Griffin , Kenneth S. Collins , Ren Liu
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32357 , H01J37/32513 , H01J37/32541 , H01J37/32568
摘要： A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.
摘要翻译： 描述了与处理室一起使用的模块化等离子体源组件。 该组件包括具有端电介质的RF热电极和邻近电极侧面定位的滑动接地连接。 密封箔将滑动接地连接到壳体，以提供通过端部电介质与热电极分离的接地滑动接地连接。 同轴馈电线通过导管进入与处理环境隔离的RF热电极，使得同轴RF馈电线处于大气压力，同时等离子体处理区域处于减压状态。
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9.发明授权Elongated capacitively coupled plasma source for high temperature low pressure environments 有权用于高温低压环境的细长电容耦合等离子体源公开(公告)号：US09355819B2
公开(公告)日：2016-05-31
申请号：US14460683
申请日：2014-08-15
申请人： John C. Forster , Joseph Yudovsky , Garry K. Kwong , Tai T. Ngo , Kevin Griffin , Kenneth S. Collins , Ren Liu
发明人： John C. Forster , Joseph Yudovsky , Garry K. Kwong , Tai T. Ngo , Kevin Griffin , Kenneth S. Collins , Ren Liu
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32357 , H01J37/32513 , H01J37/32541 , H01J37/32568
摘要： A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.
摘要翻译： 描述了与处理室一起使用的模块化等离子体源组件。 该组件包括具有端电介质的RF热电极和邻近电极侧面定位的滑动接地连接。 密封箔将滑动接地连接到壳体，以提供通过端部电介质与热电极分离的接地滑动接地连接。 同轴馈电线通过导管进入与处理环境隔离的RF热电极，使得同轴RF馈电线处于大气压力，同时等离子体处理区域处于减压状态。
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公开(公告)号：US20160024655A1
公开(公告)日：2016-01-28
申请号：US14774032
申请日：2014-03-14
申请人： Joseph YUDOVSKY , Kevin GRIFFIN
发明人： Joseph Yudovsky , Kevin Griffin
IPC分类号： C23C16/455 , C23C16/458 , C23C16/44 , H01L21/687
CPC分类号： C23C16/45557 , C23C16/4409 , C23C16/45544 , C23C16/45563 , C23C16/45565 , C23C16/45574 , C23C16/4584 , H01J37/32458 , H01J37/32513 , H01J37/32605 , H01L21/67126 , H01L21/6719 , H01L21/68785
摘要： Processing chambers including lid assemblies which form a volume above an injector assembly to decrease the deflection of the injector assembly as a result of the pressure differential between the processing side of the injector assembly and the atmospheric side of the injector assembly.
摘要翻译： 处理室包括盖组件，其形成在喷射器组件上方的体积，以减少喷射器组件的偏移，这是由于喷射器组件的处理侧和喷射器组件的大气侧之间的压力差引起的。
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