摘要:
A photoactive compound is used in combination with a photosensitizer, represented by the following formula (1): A-[(J)m-(X-Pro)]n (1) wherein A represents a hydrophobic unit comprising at least one kind of hydrophobic groups selected from a hydrocarbon group and a heterocyclic group, J represents a connecting group, X-Pro represents a hydrophilic group protected by a protective group Pro which is removable by light exposure, m represents 0 or 1, and n represents an integer of not less than 1. The protective group Pro may be removable by light exposure in association with the photosensitizer (especially, a photo acid generator), or may be a hydrophobic protective group. The hydrophilic group may be a hydroxyl group or a carboxyl group. The photoactive compound has high sensitivity to a light source of short wavelength beams, for resist application, therefore, the photoactive compound is advantageously used for forming a pattern with high resolution.
摘要:
A photosensitive resin composition for using in combination with a photosensitizer comprises an active component selected from an active metal alkoxide represented by the formula (1) or a polycondensate thereof and a particle represented by the formula (2), (X)m-n-Mm-[(U1)p—(U2-Z)t]n (1) P—[(Y)s—{(U1)p—(U2-Z)t}]k (2) wherein, X shows a hydrogen, a halogen, an alkoxy group or an alkoxycarbonyl group, M shows a metal atom whose valence m is not less than 2, U1 shows a first connecting unit, U2 shows a second connecting unit and Z shows a group causing a difference in solubility by light exposure, P shows a fine particle carrier, Y shows a coupling residue, n shows an integer of not less than 1 and m>n, p shows 0 or 1, t shows 1 or 2, k shows an integer of not less than 1, and s shows 0 or 1). The unit (U1)p—(U2-Z)t is represented by the following formula: f(R1)q-(B)r]p-({(R2),,-(Ar)v}-Zlt (wherein, R1 and R2 show an alkylene or alkenylene group; and B shows an ester bond, an amide bond, a urea bond, a urethane bond, an imino group, a sulfur atom or a nitrogen atom; Ar represents an arylene or cycloalkylene group; each of the factors, q, r, a and v, shows 0 or 1, and q+r+u+vzl; and Z, p and t have the same meanings defined above).
摘要:
A positive type photoresist composition comprising a novolak resin and O-quinone diazide compound, the novolak resin being one which is obtained by the addition condensation reaction of a phenol and formaldehyde which is performed in one stage by using as a catalyst an organic acid salt of a divalent metal which is more electropositive than hydrogen, or in two stages by using an acid catalyst in the subsequent stage, the phenol being at least one compound represented by the formula ##STR1## wherein R is hydrogen or an alkyl group of carbon number 1 to 4, the compound being such that the average carbon number in the substituent per one phenol nucelus is 0.5 to 1.5 and the ones with the substituent at the ortho- or para-position with respect to the hydroxyl group account for less than 50 mol %, is disclosed. The positive type photoresist composition of the invention has an improved resolving power, i.e., .gamma.-value.
摘要:
A positive resist composition which comprises a 1,2-quinone diazide compound and an alkali-soluble resin containing a polyphenol compound (I) of the general formula:X--.alpha.--H (I)wherein x is a group of the formula: ##STR1## and .alpha. is a divalent group which comprises a repeating unit of the formula: ##STR2## in which n is a number of not less than 1; a, b, c, d, e and f are the same or different and a number of 0-3, provided that d+f is not less than 1; R.sub.1, R.sub.2 and R.sub.3 are the same or different and a C.sub.1 -C.sub.18 alkyl group, a C.sub.1 -C.sub.18 alkoxy group, a carboxyl group or a halogen atom; R.sub.4 is a hydrogen atom, a C.sub.1 -C.sub.18 alkyl group or an aryl group, which resist composition is sensitive to radiation and has good balance of sensitivity, resolving power and heat resistance.
摘要:
A positive resist composition which comprises, in admixture, a photosensitive 1,2-quinone diazide compound, an alkali-soluble resin to bind ingredients and polyphenol compound to control a dissolution rate in a developer represented by the formula: ##STR1## wherein R is C.sub.1-18 or hydrogen, the composition is sensitive to radiation and has good balance of sensitivity, resolving power and heat resistance.
摘要:
A process for producing an aromatic polyester composition, which is characterized in that in producing an aromatic polyester represented by the general formula A, ##STR1## (wherein X is an alkylene group having 1 to 4 carbon atoms, --O--, --SO.sub.2 --, --S--, or --CO--; m and n are each 0 or 1; the ratio of d to e is in the range of from 1:1 to 10:1; the ratio of e to f is in the range of from 9:10 to 10:9; and the substituents attached to the benzene ring are in para or meta position to one another), the polymerization is carried out by the method of bulk polymerization, using substantially no solvent, and in the presence of at least one polymer selected from the group consisting of polyalkylene terephthalates, polyphenylene sulfides, aromatic polysulfones, and aromatic polyesters represented by the general formula B, ##STR2## wherein (p+q) is in the range of from 10 to 100 and p/(p+q).gtoreq.0.8.
摘要:
An inorganic pattern is formed by coating an inorganic substance-containing photosensitive composition comprising a photosensitive polymer (A), a condensable organic metal compound or a condensate thereof (B) and an inorganic filler having a functional group (C) on a base, exposing the coated layer, and developing the exposed layer to form a pattern, baking the pattern give an inorganic pattern. The photosensitive polymer (A) may be constituted of an oligomer or polymer, and a photosensitizer, and the condensable organic metal compound (B) may have a photosensitive group. The inorganic filler may be a monodispersed colloidal silica having a mean particle size of 2 to 100 nm. The proportions of the components (B) and (C) relative to 1 part by weight of the component (A) on a solid basis are about 1 to 25 parts by weight and about 1 to 20 parts by weight, respectively. Even when the content of an inorganic component is high, an inorganic pattern of high resolution can be formed with the use of the above resin composition.
摘要:
A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 are the same or different and each a hydrogen atom, an alkyl group, a halogen atom or a hydroxyl group, provided that at least one of Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 are the same or different and each a hydrogen atom, an alkyl, an aryl group, a halogen atom or a hydroxyl group, provided that at least one of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 is a hydroxyl group; X is ##STR2## in which R.sub.1 and R.sub.2 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cyclo-alkyl group, an alkoxy group or an aryl group, provided that when at least one of R.sub.1 and R.sub.2 is a hydrogen atom, an alkyl or aryl group is present at the ortho position to a hydroxyl group which is present at the ortho position to X provides a positive resist composition which has a high .gamma.-value.
摘要:
A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I) or (II): ##STR1## wherein a, c and d are the same or different and a number of 0 to 3, provided that when a is 0 or 3, b is a number of 0 to 3 or when a is 1 or 2, b is 0, 1 or 2, and a+b and c+d are not less than 2; R and R' are the same or different and an alkyl group or an aryl group provides a positive resist composition having a high .gamma.-value.
摘要:
A novolak resin for a positive photoresist is provided herein, which resin is produced by the addition condensation reaction of a phenol with formaldehyde. This novolak resin has improved heat resistant and sensitivity properties and the thickness retention of the novolak resins are very high. The novolak resins are characterized in that the area ratio of the gel permeation chromatographic pattern (GPC) as measured by the use of a UV(254 nm) detector, is as follows: a range wherein the molecular weight, calculated as polystyrene, is from 150 to less than 500, not including a phenol and the unreacted monomer, is from 8 to 35%, hereinafter referred to as an A region, the range wherein the molecular weight calculated as polystyrene is from 500 to less than 5000 is from 0 to 30%, hereinafter referred to as a B region, and the range wherein the molecular weight calculated as polystyrene exceeds 5000 is from 35 to 92%, hereinafter referred to as the C region, and wherein the ratio of the B region to the A region is 2.50 or less.