公开(公告)号：US20110198733A1

公开(公告)日：2011-08-18

申请号：US12887874

申请日：2010-09-22

申请人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

发明人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki ,  Mayu Fukuda

IPC分类号： H01L29/06 ,  H01L21/66

CPC分类号： H01L21/76804 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/11 ,  H01L24/741 ,  H01L2224/02166 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11505 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/749 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.

摘要翻译： 在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。 通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。 锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

公开(公告)号：US08405218B2

公开(公告)日：2013-03-26

申请号：US12887874

申请日：2010-09-22

申请人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Akira Tai ,  Kazuo Akamatsu ,  Yoshiko Fukuda ,  Yuji Fukuda ,  Mika Ootsuki

发明人： Manabu Tomisaka ,  Michio Kameyama ,  Terukazu Fukaya ,  Kazuhito Katoh ,  Yutaka Fukuda ,  Akira Tai ,  Kazuo Akamatsu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76804 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/11 ,  H01L24/741 ,  H01L2224/02166 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11505 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/749 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

摘要： In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.

摘要翻译： 在制造半导体器件的方法中，在半导体衬底的表面上形成电极层，并且在半导体衬底的表面上形成树脂绝缘层，使得可以用树脂绝缘层覆盖电极层。 通过使用前角为零或负值的工具钻头，在绝缘层中形成锥形孔。 锥形孔具有由绝缘层限定的开口，由电极层限定的底部和将开口连接到底部的侧壁。

公开(公告)号：US06495796B2

公开(公告)日：2002-12-17

申请号：US09912058

申请日：2001-07-25

申请人： Terukazu Fukaya ,  Takashi Nakayama ,  Sumitomo Inomata ,  Michio Kameyama ,  Seiji Tachibana

发明人： Terukazu Fukaya ,  Takashi Nakayama ,  Sumitomo Inomata ,  Michio Kameyama ,  Seiji Tachibana

IPC分类号： B23K2638

CPC分类号： B23K26/1438 ,  B23K26/1435 ,  B23K26/1476 ,  B23K26/16 ,  B23K26/382 ,  B23K26/40 ,  B23K26/704 ,  B23K2103/50

摘要： A discharging nozzle is provided in an inside space of a metal cylinder for supplying an assist gas from an inside of the metal cylinder. The gas discharging nozzle shuts a high density energy beam intruding into the inside space of the metal cylinder through a hole, so that the energy beam is prevented from being emitted to an opposite side inner surface of the metal cylinder. Dross formed during the cut-machining is drifted and swept to the outside by an assist gas flowing out from the inside space of the metal cylinder through the hole, and is blown out by the assist gas flowing on an outside surface of the metal cylinder around the hole, thereby preventing the dross from sticking to peripheral area of the hole.

摘要翻译： 在金属筒的内部空间设置有排出喷嘴，用于从金属缸的内部供给辅助气体。 气体排出喷嘴关闭通过孔侵入金属筒的内部空间的高密度能量束，防止能量束向金属筒的相对侧内面喷射。 在切削加工期间形成的浮渣通过从金属圆筒的内部空间流出的辅助气体穿过该孔而漂移并扫过外部，并且被在金属圆筒的外表面上流动的辅助气体吹出 从而防止浮渣粘附到孔的周边区域。

公开(公告)号：US20060065648A1

公开(公告)日：2006-03-30

申请号：US11159263

申请日：2005-06-23

申请人： Michio Kameyama ,  Sumitomo Inomata ,  Terukazu Fukaya ,  Eiji Kumagai ,  Hiromichi Morita

发明人： Michio Kameyama ,  Sumitomo Inomata ,  Terukazu Fukaya ,  Eiji Kumagai ,  Hiromichi Morita

IPC分类号： B23K26/38

CPC分类号： B23K26/046 ,  B23K26/0093 ,  B23K26/361

摘要： A burr removing device for removing a burr, which is formed at a connection between a first hole and a second hole that are angled relative to each other inside a workpiece. According to the burr removing device, a generated high-density energy beam is converged by a converging lens, which is located outside of the first and second holes of the workpiece. Then, the converged high-density energy beam is reflected toward the burr by a one reflecting mirror, which is located in one of the first and second holes.

摘要翻译： 一种用于除去毛刺的毛刺去除装置，其形成在第一孔和第二孔之间的连接处，所述连接在工件内相对于彼此成角度。 根据毛刺去除装置，产生的高密度能量束由位于工件的第一和第二孔外侧的会聚透镜会聚。 然后，会聚的高密度能量束通过位于第一孔和第二孔之一中的一个反射镜朝向毛刺反射。