摘要:
In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.
摘要:
In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.
摘要:
A method of manufacturing a semiconductor device includes cutting a part of a resin insulating layer formed on a surface of a semiconductor substrate with a cutting tool. The cutting the part of the resin insulating layer includes cutting a portion of the resin insulating layer that has a surface on which a metal layer is disposed. The cutting the portion of the resin insulating layer is performed in such a manner that, in a stress distribution inside the resin insulating layer along an edge portion of the cutting tool and a peripheral portion of the edge portion, a width at 90% of a maximum value is not more than 1.3 μm.
摘要:
A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.
摘要:
A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.
摘要:
A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.
摘要:
A thin circuit substrate and a circuit module are arranged such that the circuit module includes an IC mounted on a circuit substrate, the IC includes an IC body and an solder bump located on a mounting surface of the IC body, and the circuit substrate includes a substrate including a recess formed by recessing a portion of a mounting surface of the substrate on which the IC is to be mounted, and a terminal protruding from the mounting surface of the substrate. The terminal is to be electrically connected to the solder bump.
摘要:
An object is to provide an artificial vision system ensuring a wide field of view without damaging a retina. In the artificial vision system, a plurality of electrodes (23) are to be implanted so as to stick in an optic papilla of an eye of a patient. A signal for stimulation pulse is generated based on an image captured by an image pick up device (11) to be disposed outside a body of the patient. The electrical stimulation signals outputted from the electrodes (23) based on the signals for stimulation pulse stimulate an optic nerve of the eye, thereby enabling the patient to visually recognize the image from the image pickup device (11).
摘要:
A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.
摘要:
An electrical part comprising a lead conductor and a sealed vessel including a metal layer, the lead conductor extending from the inside of the sealed vessel to the outside, wherein the lead conductor and the sealed vessel are fusion-bonded through a thermal adhesive layer at the sealing portion, and wherein a softening-resistant layer having through holes made in the thickness direction is provided between the lead conductor and the metal layer at the sealing portion. A nonaqueous electrolyte cell comprising an electrode and a nonaqueous electrolyte both enclosed inside the sealed vessel. A sealed vessel and a lead conductor having an insulating coating layer, both of which can be used in the electrical part or the like.