-
1.发明申请Enhancement of Magnetic Media Recording Performance Using Ion Irradiation to Tailor Exchange Coupling 审中-公开使用离子照射调节磁性交换耦合的磁介质记录性能的增强公开(公告)号：US20080292906A1
公开(公告)日：2008-11-27
申请号：US12182909
申请日：2008-07-30
IPC分类号： G11B5/62
CPC分类号： G11B5/84
摘要： Magnetic medium recording performance can be enhanced by irradiating a magnetic medium with ions having an acceleration voltage of between 10 keV and 100 keV to induce exchange coupling between grains of the magnetic medium. The magnetic medium is exposed to a cumulative ion dosage of between 1013 ions/cm2 and 1017 ions/cm2 using a non-patterned exposure of the magnetic medium. The ions can be selected from the group consisting of H+, He+, Ne+, Ar+, Kr+, and Xe+. Alternatively, the ions can be selected from the group consisting of Ga+, Hg+, and In+.
摘要翻译： 通过用具有10keV至100keV的加速电压的离子照射磁性介质，可以提高磁性介质记录性能，以引起磁性介质颗粒之间的交换耦合。 使用磁性介质的非图案曝光，磁介质暴露于1013离子/ cm 2和1017离子/ cm 2之间的累积离子剂量。 离子可以选自H +，He +，Ne +，Ar +，Kr +和Xe +。 或者，离子可以选自Ga +，Hg +和In +。
-
2.发明授权Enhancement of magnetic media recording performance using ion irradiation to tailor exchange coupling 有权使用离子辐射增强磁性介质记录性能，从而定制交换耦合公开(公告)号：US07425353B2
公开(公告)日：2008-09-16
申请号：US10768347
申请日：2004-01-29
CPC分类号： G11B5/84
摘要： Magnetic medium recording performance can be enhanced by irradiating a magnetic medium with ions having an acceleration voltage of between 10 keV and 100 keV to induce exchange coupling between grains of the magnetic medium. The magnetic medium is exposed to a cumulative ion dosage of between 1013 ions/cm2 and 1017 ions/cm2 using a non-patterned exposure of the magnetic medium. The ions can be selected from the group consisting of H+, He+, Ne+, Ar+, Kr+, and Xe+. Alternatively, the ions can be selected from the group consisting of Ga+, Hg+, and In+.
摘要翻译： 通过用具有10keV至100keV的加速电压的离子照射磁性介质，可以提高磁性介质记录性能，以引起磁性介质颗粒之间的交换耦合。 磁介质暴露于10-12个离子/ cm 2和10个/ 17个/ cm 2之间的累积离子剂量， / SUP>使用磁性介质的非图案曝光。 离子可以选自H +，H +，H +，O +，O + Kr> + + +。。and and and and and。。。。。。。。。。。。 或者，离子可以选自Ga +，Hg +和/和SUP + +。
-
公开(公告)号：US08343578B2
公开(公告)日：2013-01-01
申请号：US11554079
申请日：2006-10-30
CPC分类号： C08L53/00 , C08L2666/02
摘要： A method and associated structure. A substrate is provided. The substrate has an energetically neutral corrugated surface layer. A film is formed on the corrugated surface layer. The film includes a combination of a di-block copolymer and a stiffening compound. The di-block copolymer includes lamellar microdomains of a first polymer block and lamellar microdomains of a second polymer block. The stiffening compound is dissolved within the first polymer block. At least one lamellar microdomain is removed from the film such that an oriented structure remains on the surface layer.
摘要翻译： 一种方法和相关结构。 提供基板。 衬底具有能量中性的波纹表面层。 在波纹表面层上形成膜。 该膜包括二嵌段共聚物和硬化化合物的组合。 二嵌段共聚物包括第一聚合物嵌段的层状微区和第二聚合物嵌段的层状微区。 硬化化合物溶解在第一聚合物嵌段内。 从薄膜中去除至少一个层状微畴，使得取向结构保留在表面层上。
-
公开(公告)号：US20090095953A1
公开(公告)日：2009-04-16
申请号：US12336497
申请日：2008-12-16
申请人： Yi-Chou Chen , Frances Anne Houle , Simone Raoux , Charles Thomas Rettner , Alejandro Gabriel Schrott
发明人： Yi-Chou Chen , Frances Anne Houle , Simone Raoux , Charles Thomas Rettner , Alejandro Gabriel Schrott
CPC分类号： G11B7/2433 , G11B7/00454 , G11B7/2437 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1625
摘要： A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.
摘要翻译： 存储器件利用相变材料作为存储介质。 相变材料包括Ge，Sb，Te，Se，As和S中的至少一种，以及作为掺杂剂的氮化物化合物。 存储器件可以是具有与相变介质电连通的电极的固态存储单元，其中以光学方式读取和写入数据的光学相变存储装置，或者基于扫描探针显微镜原理的存储装置。
-
公开(公告)号：US07038204B2
公开(公告)日：2006-05-02
申请号：US10855096
申请日：2004-05-26
IPC分类号： H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J2237/31796
摘要： An electric field is applied below a resist to reduce proximity effects associated with electron beam scattering, thereby improving the resolution of features or lines written into the resist. Although the electrons in the electron beam can be very energetic (e.g., >>10 keV), it is shown that even a small electric field can reduce the number of electrons that re-enter the resist material after being scattered in the substrate, and thus reduce the energy deposited in the resist from these electrons. One advantage of this technique is that high potentials and high fields are not required. Accordingly, the methods described can be applied to existing tooling with little modification to the electron beam system.
摘要翻译： 在抗蚀剂下方施加电场以减少与电子束散射相关的邻近效应，从而提高写入抗蚀剂的特征或线的分辨率。 虽然电子束中的电子能量非常高（例如>> 10keV），但是即使是小的电场也可以减少在衬底中散射后再次进入抗蚀剂材料的电子数， 从而减少从这些电子沉积在抗蚀剂中的能量。 这种技术的一个优点是不需要高电位和高电场。 因此，所描述的方法可以用于对电子束系统几乎没有修改的现有工具。
-
6.发明授权公开(公告)号：US08828493B2
公开(公告)日：2014-09-09
申请号：US12641987
申请日：2009-12-18
CPC分类号： G03F7/0392 , G03F7/091 , G03F7/165 , G03F7/2041 , G03F7/40
摘要： Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.
摘要翻译： 公开了用于形成包括自组装材料的层状结构的方法。 光化学，热学和/或化学处理初始图案化的光致抗蚀剂层以形成包含非交联处理的光致抗蚀剂的经处理的图案化光致抗蚀剂层。 经处理的光致抗蚀剂不溶于适于铸造能够自组装的材料的有机溶剂中。 将包含溶解在有机溶剂中的能够自组装的材料的溶液浇铸在处理层上，并除去有机溶剂。 允许铸造材料通过任选的加热和/或退火自组装，从而形成包括自组装材料的层状结构。 可以使用碱性水溶液和/或第二有机溶剂除去经处理的光致抗蚀剂。
-
7.发明申请公开(公告)号：US20080103256A1
公开(公告)日：2008-05-01
申请号：US11554079
申请日：2006-10-30
IPC分类号： C08L53/00
CPC分类号： C08L53/00 , C08L2666/02
摘要： A method and associated structure. A substrate is provided. The substrate has an energetically neutral corrugated surface layer. A film is formed on the corrugated surface layer. The film includes a combination of a di-block copolymer and a stiffening compound. The di-block copolymer includes lamellar microdomains of a first polymer block and lamellar microdomains of a second polymer block. The stiffening compound is dissolved within the first polymer block. At least one lamellar microdomain is removed from the film such that an oriented structure remains on the surface layer.
摘要翻译： 一种方法和相关结构。 提供基板。 衬底具有能量中性的波纹表面层。 在波纹表面层上形成膜。 该膜包括二嵌段共聚物和硬化化合物的组合。 二嵌段共聚物包括第一聚合物嵌段的层状微区和第二聚合物嵌段的层状微区。 硬化化合物溶解在第一聚合物嵌段内。 从薄膜中去除至少一个层状微畴，使得取向结构保留在表面层上。
-
公开(公告)号：US20080042167A1
公开(公告)日：2008-02-21
申请号：US11465077
申请日：2006-08-16
申请人： Yi-Chou Chen , Frances Anne Houle , Simone Raoux , Charles Thomas Rettner , Alejandro Gabriel Schrott
发明人： Yi-Chou Chen , Frances Anne Houle , Simone Raoux , Charles Thomas Rettner , Alejandro Gabriel Schrott
IPC分类号： H01L27/10 , H01L29/739
CPC分类号： G11B7/2433 , G11B7/00454 , G11B7/2437 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1625
摘要： A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.
摘要翻译： 存储器件利用相变材料作为存储介质。 相变材料包括Ge，Sb，Te，Se，As和S中的至少一种，以及作为掺杂剂的氮化物化合物。 存储器件可以是具有与相变介质电连通的电极的固态存储单元，其中以光学方式读取和写入数据的光学相变存储装置，或者基于扫描探针显微镜原理的存储装置。
-
9.发明授权公开(公告)号：US08856693B2
公开(公告)日：2014-10-07
申请号：US13606055
申请日：2012-09-07
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
CPC分类号： G03F1/38 , B82Y10/00 , B82Y40/00 , G03F1/00 , G03F7/0002
摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.
摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。
-
10.发明授权公开(公告)号：US08336003B2
公开(公告)日：2012-12-18
申请号：US12708570
申请日：2010-02-19
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , B82Y10/00 , B82Y40/00 , G03F1/00 , G03F7/0002
摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.
摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.029 秒)
