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    Spin-rinse-dryer
    4.
    发明授权
    Spin-rinse-dryer 失效

    公开(公告)号：US06516816B1

    公开(公告)日：2003-02-11

    申请号：US09544660

    申请日：2000-04-06

    申请人： Anwar Husain ,  Brian J. Brown ,  David G. Andeen ,  Svetlana Sherman ,  John M. White ,  Michael Sugarman ,  Makoto Inagawa ,  Manoocher Birang

    发明人： Anwar Husain ,  Brian J. Brown ,  David G. Andeen ,  Svetlana Sherman ,  John M. White ,  Michael Sugarman ,  Makoto Inagawa ,  Manoocher Birang

    IPC分类号： B08B302

    CPC分类号： H01L21/67028 ,  Y10S134/902

    摘要： An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction. A sensor adapted to facilitate desired flywheel position, an openable gripper having a remote actuator, a radiused gripper and a source of inert drying gas are also provided in individual embodiments.

    Web lift system for chemical mechanical planarization
    5.
    发明授权
    Web lift system for chemical mechanical planarization 失效
    用于化学机械平面化的Web提升系统

    公开(公告)号：US06561884B1

    公开(公告)日：2003-05-13

    申请号：US09651657

    申请日：2000-08-29

    申请人： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    发明人： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    IPC分类号： B24B700

    CPC分类号： B24B37/16 ,  B24B21/004 ,  B24B21/008 ,  B24B21/20

    摘要： Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

    摘要翻译： 通常，提供了用于提升抛光材料的网的方法和系统。 在一个实施例中，系统包括具有邻近第一侧设置的第一提升构件和邻近第二侧设置的第二提升构件的压板。 压板适于支撑布置在第一和第二升降构件之间的抛光介质的腹板。 一种方法包括在第一提升构件和第二提升构件之间的台板上支撑抛光介质的腹板，并且将至少第一提升构件或第二提升构件移动到相对于台板的延伸位置， 与压板分开关系。

    Magnetic field-enhanced plasma etch reactor
    6.
    发明授权
    Magnetic field-enhanced plasma etch reactor 失效
    磁场增强等离子体蚀刻反应器

    公开(公告)号：US5215619A

    公开(公告)日：1993-06-01

    申请号：US760848

    申请日：1991-09-17

    申请人： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

    发明人： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01L21/67069 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32862

    摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

    摘要翻译： 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从协作的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

    Spin-rinse-dryer
    7.
    发明授权
    Spin-rinse-dryer 失效
    旋转干燥机

    公开(公告)号：US07226514B2

    公开(公告)日：2007-06-05

    申请号：US10309832

    申请日：2002-12-04

    申请人： Anwar Husain ,  Brian J. Brown ,  David G. Andeen ,  Svetlana Sherman ,  John M. White ,  Michael Sugarman ,  Makoto Inagawa ,  Manoocher Birang

    发明人： Anwar Husain ,  Brian J. Brown ,  David G. Andeen ,  Svetlana Sherman ,  John M. White ,  Michael Sugarman ,  Makoto Inagawa ,  Manoocher Birang

    IPC分类号： B08B3/02

    CPC分类号： H01L21/67028 ,  Y10S134/902

    摘要： An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction. A sensor adapted to facilitate desired flywheel position, an openable gripper having a remote actuator, a radiused gripper and a source of inert drying gas are also provided in individual embodiments.

    摘要翻译： 提供了一种创造性的垂直旋转干燥器。 本发明的旋转干燥器可以具有屏蔽系统，其被定位成接收从垂直定位在旋转干燥器内的衬底移位的流体。 屏蔽系统可以具有一个或多个屏蔽件，其定位成当流体冲击屏蔽时至少部分地反射流体。 一个或多个屏蔽件成角度以促使其流体流动，并且优选是亲水的以防止液滴形成。 优选地，屏蔽系统具有以水平和垂直交错方式定位的三个屏蔽件，使得流体从第一屏蔽件的面向基板的表面转移到相邻屏蔽件的顶部或非基板面向表面等。压力梯度可以 施加在旋转干燥器的内部以产生鼓风流体沿着屏蔽系统沿所需方向行进的空气流。 在各个实施例中还提供了适于促进期望的飞轮位置的传感器，具有远程致动器的可打开夹具，圆角夹持器和惰性干燥气体源。

    Web lift system for chemical mechanical planarization
    8.
    发明授权
    Web lift system for chemical mechanical planarization 失效

    公开(公告)号：US07008303B2

    公开(公告)日：2006-03-07

    申请号：US10408032

    申请日：2003-04-03

    申请人： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    发明人： John M. White ,  Phillip R. Sommer ,  Sasson Somekh

    IPC分类号： B24B1/00 ,  B24B7/00

    CPC分类号： B24B37/16 ,  B24B21/004 ,  B24B21/008 ,  B24B21/20

    摘要： Generally, a method and system for lifting a web of polishing material is provided. In one embodiment, the system includes a platen that has a first lift member disposed adjacent to a first side and a second lift member disposed adjacent to a second side. The platen is adapted to support the web of polishing media that is disposed between the first and the second lift members. A method includes supporting a web of polishing media on a platen between a first lift member and a second lift member and moving at least the first lift member or the second lift member to an extended position relative the platen that places the web in a spaced-apart relation with the platen.

    Magnetic field-enhanced plasma etch reactor
    9.
    发明授权
    Magnetic field-enhanced plasma etch reactor 失效
    磁场增强等离子体蚀刻反应器

    公开(公告)号：US4842683A

    公开(公告)日：1989-06-27

    申请号：US185215

    申请日：1988-04-25

    申请人： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

    发明人： David Cheng ,  Dan Maydan ,  Sasson Somekh ,  Kenneth R. Stalder ,  Dana L. Andrews ,  Mei Chang ,  John M. White ,  Jerry Y. K. Wong ,  Vladimir J. Zeitlin ,  David N. Wang

    IPC分类号： H05H1/46 ,  B01J3/02 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： H01L21/67069 ,  H01J37/32431 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32862

    摘要： A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting cathode; and a unitary wafer exchange mechanism comprising wafer lift pins which extend through the pedestal and a wafer clamp ring. The lift pins and clamp ring are moved vertically by a one-axis lift mechanism to accept the wafer from a cooperating external robot blade, clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device applies the cooling gas to the RF powered electrode without breakdown of the gas. Protective coatings/layers of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

    摘要翻译： 公开了一种磁场增强型单晶片等离子体蚀刻反应器。 反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑阴极; 以及包括延伸穿过基座的晶片提升销和晶片夹紧环的整体晶片交换机构。 提升销和夹紧环通过单轴提升机构垂直移动，以从配合的外部机器人刀片接收晶片，将晶片夹紧到基座并将晶片返回到刀片。 电极冷却结合了用于电极体的水冷却和晶片和电极之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。 气体馈通装置将冷却气体施加到RF供电的电极，而不会破坏气体。 为诸如夹紧环和气体歧管的表面提供保护涂层/诸如石英的材料层。 这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。