Method of forming ruthenium-based thick-film resistors
    2.
    发明授权
    Method of forming ruthenium-based thick-film resistors 有权
    形成钌基厚膜电阻的方法

    公开(公告)号:US06180164B2

    公开(公告)日:2001-01-30

    申请号:US09178758

    申请日:1998-10-26

    IPC分类号: B05D512

    摘要: A method for forming a ruthenium-based thick-film resistor having copper terminations, in which the thick-film resistor is fired in a non-oxidizing atmosphere so as not to oxidize the copper terminations yet without reducing the thick-film resistor to metallic ruthenium. A ruthenium-based thick-film resistor ink having a matrix material and an organic vehicle is deposited on a copper layer that will form the terminations for the thick-film resistor formed by firing the ink. The organic vehicle of the ink is then burned out at a temperature of less than 350° C. in an oxidizing atmosphere, such as air. Thereafter, the ink is fired in a non-oxidizing atmosphere (e.g., nitrogen) at a temperature sufficient to sinter the matrix material and yield a ruthenium-based thick-film resistor with copper terminations formed by the copper layer.

    摘要翻译: 一种用于形成具有铜端接的钌基厚膜电阻器的方法,其中在非氧化气氛中烧结厚膜电阻器,以便不将氧化铜端子而不将厚膜电阻器还原成金属钌 。 将具有基质材料和有机载体的钌基厚膜电阻墨水沉积在铜层上,该铜层将形成通过烧制墨形成的厚膜电阻器的端子。 然后在氧化气氛如空气中,在小于350℃的温度下将油墨的有机载体烧尽。 此后,在足以烧结基质材料的温度下,在非氧化性气氛(例如氮气)中烧制油墨,得到由铜层形成的铜终止物的钌基厚膜电阻器。