摘要:
A memory (20) for performing read cycles and write cycles has memory cells (30) located at intersections of word lines (32) and bit line pairs (34). A write control circuit (44) receives a write enable signal. The logic state of the write enable signal determines whether memory (20) writes data into, or reads data from, memory (20). Memory (20) includes row address decoding for selecting a word line (32). During a write cycle, a control signal generated by write control circuit (44) and single-sided delay circuit (45) is provided to row predecoder (42). The old row address is latched, and a new address is prevented from selecting a new word line (32) until the write enable signal changes state to begin a read cycle. Controlling word line selection with the write enable signal ensures that bit line equalization occurs before the beginning of a read cycle.
摘要:
A power-on reset circuit (30) for a memory (20) includes a DC model circuit (39), an N.sub.BIAS check circuit (64), and a NAND logic gate (71). A logic low power-on reset signal is provided at power-up of the memory (20) to establish initial conditions in a clock circuit (29) and in row and column predecoders/latches (24, 27). When the power supply voltage, a bandgap reference voltage, and a bias voltage all reach their predetermined voltages, the power-on reset circuit (30) provides a logic high power-on reset signal. In this manner, the power-on reset circuit (30) is assured of providing a logic low power-on reset signal until all of the proper voltage levels are reached. In addition, the power-on reset circuit models a DC circuit equivalent of an address buffer circuit (79) for compensating for process and temperature variations.
摘要:
A delay locked loop (44) includes an arbiter circuit (86), a VCD circuit (85), and a collapse detector (88). The arbiter circuit (86) receives an input signal and provides a retard signal to adjust the amount of propagation delay of VCD circuit (85), in order to synchronize the phases of the input signal to an output signal of the VCD circuit (85). The collapse detector (88) detects if the output signal of the VCD circuit (85) has failed to change logic states within a predetermined length of time. The delay locked loop (44) can lock the phases of two signals having different frequencies.
摘要:
A pipelined memory (20) has a synchronous operating mode and an asynchronous operating mode. The memory (20) includes output registers (34) and output enable registers (48) which are used to electrically switch between the asynchronous operating mode and the synchronous operating mode. In addition, in the synchronous operating mode, the depth of pipelining can be changed between a three stage pipeline and a two stage pipeline. By changing the depth of pipelining, the memory (20) can operate using a greater range of clock frequencies. In addition, the operating frequency can be changed to facilitate testing and debugging of the memory (20).
摘要:
An ECL-to-CMOS buffer having a single-sided delay comprises an ECL logic gate, a level converter, a plurality of series connected inverters, and a NOR gate. The ECL logic gate receives an ECL level input signal, and provides complementary intermediate level logic signals. The level converter receives the intermediate level logic signals and provides a CMOS level output signal. The NOR gate receives the CMOS level output signal, via the series connected inverters, at an input terminal after a predetermined delay. One of the intermediate level logic signals is also received by the NOR gate at a second input terminal. The CMOS level output signal is delayed for a predetermined time in a low-to-high transition, with no unwanted delay in a high-to-low transition.
摘要:
A memory (20) has a read cycle and a write cycle. During the read cycle, differential data signals, corresponding to data provided by a selected memory cell, are superimposed on a first common mode voltage and provided to data output buffers (70-73). During the write cycle, differential data signals on read global data lines (61-62) are equalized at a second common mode voltage and data output buffers (70-73) are disabled. Output enable circuit (74) provides an output enable signal halfway between the first and second common mode voltages. Data output buffers (70-73) are enabled at the beginning of the read cycle when the differential data signals cross the output enable signal as they transition from the second common mode voltage to the first common mode voltage. Enabling data output buffers (70-73) in this way greatly relaxes output enable timing constraints.
摘要:
A delay locked loop (44) includes an arbiter circuit (86), a VCD circuit (85), and a collapse detector (88). The arbiter circuit (86) receives an input signal and provides a retard signal to adjust the amount of propagation delay of VCD circuit (85), in order to synchronize the phases of the input signal to an output signal of the VCD circuit (85). The collapse detector (88) detects if the output signal of the VCD circuit (85) has failed to change logic states within a predetermined length of time. The delay locked loop (44) can lock the phases of two signals having different frequencies.
摘要:
An integrated circuit memory with improved di/dt control. The memory stores a plurality of data bits at intersections of word lines and bit line pairs. In response to a change in at least one of a plurality of address signals during a read cycle, first and second precharge signals are asserted, the second precharge signal asserted after the first precharge signal. An output buffer provides a data output signal at a voltage between a logic high and a logic low voltage in response to an assertion of the second precharge signal, and provides said data output signal corresponding to a voltage on an enabled bit line pair in response to a negation of the first precharge signal. Thus, the voltage on the data output signal changes less when the data bit is provided during the data period. The memory thus improves di/dt for a given access time, or conversely, allows reduced access time for a given di/dt.
摘要:
Methods and apparatus for dynamically adjusting the amount of power (or current) distributed to one or more connected devices via electrical interfaces. In one embodiment, the apparatus comprises a first module adapted to detect current drawn by a first set of ports, and a second module adapted to adjust the current provided to a second set of ports based on the detected current. The second module is also optionally adapted to distribute unreserved current among the devices according to an allocation protocol. In the exemplary context of a plurality of interconnected serial bus devices, the invention enables a device to draw more current than that required to be reserved for that device (such as to comply with a specification such as USB), yet without increasing the total amount of power which must be dedicated to the serial ports as a whole. Power supply efficiency may also be advantageously optimized.
摘要:
A low crosstalk transmission connector includes a housing that houses a metal spring plate, a load bar, a terminal module and a locating frame, a cable organizer, which has an axle hole that receives a 8-wire cable and 8 wire grooves that separate the 8 insulated wires of the cable, and a metal shield that accommodates the cable organizer and has a bottom clamping plate and a top clamping plate respectively hooked on the bottom and top sides of the housing to ensure high steadity. The 4th and 6th metal contact terminals and the 1st, 2nd, 3rd, 5th, 7th and 8th metal contact terminals of the terminal module have the respective front contact portions curved in two reversed directions to reduce crosstalk noise, thereby improving transmission quality.