公开(公告)号：US20050063356A1

公开(公告)日：2005-03-24

申请号：US10960244

申请日：2004-10-07

Applicant: Mark Larsen ,  James Larsen

Inventor： Mark Larsen ,  James Larsen

IPC: H04B7/005 ,  H04B7/26 ,  H04L12/00 ,  H04L12/26 ,  H04L12/721 ,  H04L12/28

CPC classification number: H04W52/243 ,  H04L43/08 ,  H04L43/0829 ,  H04L43/0852 ,  H04L43/0864 ,  H04L43/10 ,  H04L43/12 ,  H04L45/70 ,  H04W16/14 ,  H04W24/00 ,  H04W52/0219 ,  H04W52/0245 ,  H04W52/04 ,  H04W52/10 ,  H04W52/223 ,  H04W52/226 ,  H04W52/228 ,  H04W52/242 ,  H04W52/246 ,  H04W52/247 ,  H04W52/46 ,  H04W72/08

Abstract: The invention relates to a method of operating a communication network, the network comprising a plurality of stations which are able to transmit data to and receive data from one another. The method comprises monitoring, at each station, the transmission path quality between that station and each other station with which that station can communicate. Data corresponding to the monitored path quality is recorded at each station, thereby permitting a transmission power value based on the relevant path quality data to be selected when transmitting data to another station. Thus, the probability of transmitting data to any selected station at an optimum power level is increased. Each station transmits path quality data in its own transmissions as well as local noise/interference data, so that other stations can obtain path quality data for a particular station even if they are out of range of that particular station. The invention extends to communication apparatus which can be used to implement the method.

Abstract translation: 本发明涉及一种操作通信网络的方法，该网络包括能够将数据彼此传输和接收数据的多个站。 该方法包括在每个站处监测该站与该站可以与之通信的每个其他站之间的传输路径质量。 在每个站处记录与被监视的路径质量对应的数据，从而当向另一站发送数据时，允许基于相关路径质量数据的发送功率值被选择。 因此，以最佳功率电平将数据发送到任何选择的站的概率增加。 每个站在其自己的传输中传送路径质量数据以及本地噪声/干扰数据，使得其他站可以获得特定站的路径质量数据，即使它们在该特定站的范围之外。 本发明延伸到可用于实现该方法的通信设备。

公开(公告)号：US08058732B2

公开(公告)日：2011-11-15

申请号：US12275086

申请日：2008-11-20

Applicant: Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Ihsiu Ho ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Rohit Dikshit

Inventor： Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Ihsiu Ho ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Rohit Dikshit

IPC: H01L23/48

CPC classification number: H01L29/7802 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/482 ,  H01L24/16 ,  H01L24/19 ,  H01L24/31 ,  H01L29/0657 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/73253 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/00

Abstract: Disclosed are semiconductor die structures that enable a die having a vertical power device to be packaged in a wafer-level chip scale package where the current-conducting terminals are present at one surface of the die, and where the device has very low on-state resistance. In an exemplary embodiment, a trench and an aperture are formed in a backside of a die, with the aperture contacting a conductive region at the top surface of the die. A conductive layer and/or a conductive body may be disposed on the trench and aperture to electrically couple the backside current-conducting electrode of the device to the conductive region. Also disclosed are packages and systems using a die with a die structure according to the invention, and methods of making dice with a die structure according to the invention.

Abstract translation: 公开了半导体管芯结构，其使具有垂直功率器件的管芯封装在晶片级芯片级封装中，其中导电端子存在于管芯的一个表面处，并且器件具有非常低的导通状态 抵抗性。 在示例性实施例中，沟槽和孔形成在管芯的背面，孔与导管的顶表面处的导电区接触。 可以在沟槽和孔上设置导电层和/或导体，以将器件的背面导电电极电耦合到导电区域。 还公开了使用根据本发明的具有模具结构的模具的封装和系统，以及根据本发明的具有模具结构的模具的方法。

公开(公告)号：USD312714S

公开(公告)日：1990-12-04

申请号：US341067

申请日：1989-04-20

Applicant: Robert Simonelli ,  Mark Larsen ,  Kiyoshi Iha

Designer： Robert Simonelli ,  Mark Larsen ,  Kiyoshi Iha

公开(公告)号：US08598035B2

公开(公告)日：2013-12-03

申请号：US13151495

申请日：2011-06-02

Applicant: Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Douglas E. Dolan

Inventor： Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Douglas E. Dolan

IPC: H01L21/44

CPC classification number: H01L23/49513 ,  H01L23/49524 ,  H01L24/05 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/2518 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83856 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/37099

Abstract: Disclosed are semiconductor dice with backside trenches filled with elastic conductive material. The trenches reduce the on-state resistances of the devices incorporated on the dice. The elastic conductive material provides a conductive path to the backsides of the die with little induced stress on the semiconductor die caused by thermal cycling. Also disclosed are packages using the dice, and methods of making the dice.

Abstract translation: 公开了具有填充有弹性导电材料的背面沟槽的半导体裸片。 沟槽减小了掺入骰子的器件的导通电阻。 弹性导电材料为模具的背面提供导电路径，在半导体芯片上由热循环引起的微小应力。 还公开了使用骰子的包裹以及制造骰子的方法。

公开(公告)号：US08072027B2

公开(公告)日：2011-12-06

申请号：US12480065

申请日：2009-06-08

Applicant: Suku Kim ,  Dan Calafut ,  Ihsiu Ho ,  Dan Kinzer ,  Steven Sapp ,  Ashok Challa ,  Seokjin Jo ,  Mark Larsen

Inventor： Suku Kim ,  Dan Calafut ,  Ihsiu Ho ,  Dan Kinzer ,  Steven Sapp ,  Ashok Challa ,  Seokjin Jo ,  Mark Larsen

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/0865 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/4933

Abstract: Semiconductor devices and methods for making such devices that contain a 3D channel architecture are described. The 3D channel architecture is formed using a dual trench structure containing with a plurality of lower trenches extending in an x and y directional channels and separated by a mesa and an upper trench extending in a y direction and located in an upper portion of the substrate proximate a source region. Thus, smaller pillar trenches are formed within the main line-shaped trench. Such an architecture generates additional channel regions which are aligned substantially perpendicular to the conventional line-shaped channels. The channel regions, both conventional and perpendicular, are electrically connected by their corner and top regions to produce higher current flow in all three dimensions. With such a configuration, higher channel density, a stronger inversion layer, and a more uniform threshold distribution can be obtained for the semiconductor device. Other embodiments are described.

Abstract translation: 描述了用于制造包含3D通道架构的这种设备的半导体器件和方法。 3D通道架构使用双沟槽结构形成，该双沟槽结构包含多个下沟槽，该多个下沟槽在x和y定向沟槽中延伸并且被台面和上部沟槽隔开，该沟槽沿ay方向延伸并且位于基板的上部附近 源区。 因此，在主线状沟槽内形成较小的支柱沟槽。 这种架构产生基本垂直于常规线形通道排列的附加通道区域。 常规和垂直的通道区域通过其角部和顶部区域电连接以在所有三维空间中产生更高的电流。 通过这样的结构，半导体器件可以获得更高的沟道密度，更强的反转层和更均匀的阈值分布。 描述其他实施例。

公开(公告)号：US20110230046A1

公开(公告)日：2011-09-22

申请号：US13151495

申请日：2011-06-02

Applicant: Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Douglas E. Dolan

Inventor： Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Douglas E. Dolan

IPC: H01L21/28

CPC classification number: H01L23/49513 ,  H01L23/49524 ,  H01L24/05 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/2518 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83856 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/37099

Abstract: Disclosed are semiconductor dice with backside trenches filled with elastic conductive material. The trenches reduce the on-state resistances of the devices incorporated on the dice. The elastic conductive material provides a conductive path to the backsides of the die with little induced stress on the semiconductor die caused by thermal cycling. Also disclosed are packages using the dice, and methods of making the dice.

Abstract translation: 公开了具有填充有弹性导电材料的背面沟槽的半导体裸片。 沟槽减小了掺入骰子的器件的导通电阻。 弹性导电材料为模具的背面提供导电路径，在半导体芯片上由热循环引起的微小应力。 还公开了使用骰子的包裹以及制造骰子的方法。

公开(公告)号：US20100123225A1

公开(公告)日：2010-05-20

申请号：US12275086

申请日：2008-11-20

Applicant: Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Ihsiu Ho ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Rohit Dikshit

Inventor： Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Ihsiu Ho ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Rohit Dikshit

IPC: H01L23/495 ,  H01L21/60

CPC classification number: H01L29/7802 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/482 ,  H01L24/16 ,  H01L24/19 ,  H01L24/31 ,  H01L29/0657 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/73253 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/00

Abstract: Disclosed are semiconductor die structures that enable a die having a vertical power device to be packaged in a wafer-level chip scale package where the current-conducting terminals are present at one surface of the die, and where the device has very low on-state resistance. In an exemplary embodiment, a trench and an aperture are formed in a backside of a die, with the aperture contacting a conductive region at the top surface of the die. A conductive layer and/or a conductive body may be disposed on the trench and aperture to electrically couple the backside current-conducting electrode of the device to the conductive region. Also disclosed are packages and systems using a die with a die structure according to the invention, and methods of making dice with a die structure according to the invention.

Abstract translation: 公开了半导体管芯结构，其使具有垂直功率器件的管芯封装在晶片级芯片级封装中，其中导电端子存在于管芯的一个表面处，并且器件具有非常低的导通状态 抵抗性。 在示例性实施例中，沟槽和孔形成在管芯的背面，孔与导管的顶表面处的导电区接触。 可以在沟槽和孔上设置导电层和/或导体，以将器件的背面导电电极电耦合到导电区域。 还公开了使用根据本发明的具有模具结构的模具的封装和系统，以及根据本发明的具有模具结构的模具的方法。

公开(公告)号：US20070011431A1

公开(公告)日：2007-01-11

申请号：US11167727

申请日：2005-06-27

Applicant: Gregory Hogdal ,  James Stulz ,  Mark Larsen

Inventor： Gregory Hogdal ,  James Stulz ,  Mark Larsen

IPC: G06F12/00

CPC classification number: G06F11/3644 ,  G06F12/10

Abstract: Software breakpoints for code that normally executes from ROM are set by remapping a page of virtual addresses normally translated to a page of physical addresses in ROM to a page of physical addresses in RAM. This new mapping is stored in the page table and translation look-aside table (TLB). Further, the information stored at the page of ROM is copied to the remapped physical addresses of the RAM. As a result, the ROM information is stored at physical addresses of RAM, and virtual addresses of that ROM code are remapped to these RAM physical addresses. Accordingly, software breakpoints can be written for the ROM code because the code is now stored in RAM.

Abstract translation: 通常从ROM执行的代码的软件断点通过重新映射通常转换为ROM中的物理地址页面的虚拟地址页面到RAM中的物理地址页面来设置。 这个新映射存储在页表和转换后视表（TLB）中。 此外，存储在ROM页面的信息被复制到RAM的映射物理地址。 结果，ROM信息被存储在RAM的物理地址处，并且该ROM代码的虚拟地址被重新映射到这些RAM物理地址。 因此，可以为ROM代码写入软件断点，因为代码现在存储在RAM中。

公开(公告)号：US5284170A

公开(公告)日：1994-02-08

申请号：US865932

申请日：1992-04-09

Applicant: Mark Larsen

Inventor： Mark Larsen

IPC: A47L17/00 ,  B08B9/093 ,  B08B3/02

CPC classification number: A47L17/00 ,  B08B9/093

Abstract: A spraying device rinses recyclable or reusable containers by inverting the container over an open end of a rigid, tubular member. The rigid, tubular member is of substantially uniform diameter with openings of smaller diameter than the tubular member at its open end. A water stream flowing through the tubular member is controlled by hand-operation of a valve member or by valve actuation using the weight of the container and/or the pressure by a user holding the container which depresses a lever initiating the water stream. Therefore, either single-handed or two-handed operation for cleaning or rinsing containers may be performed.

Abstract translation: 喷射装置通过将容器翻转在刚性管状构件的开口端上来冲洗可回收或可重复使用的容器。 刚性的管状构件具有基本均匀的直径，在其开口端具有比管状构件更小的直径的开口。 流过管状构件的水流通过手动操作阀构件或通过使用容器的重量的阀致动和/或由使用者保持容器的压力来控制，所述容器压下启动水流的杆。 因此，可以进行用于清洁或冲洗容器的单手或双手操作。

公开(公告)号：US07960800B2

公开(公告)日：2011-06-14

申请号：US12334331

申请日：2008-12-12

Applicant: Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Douglas E. Dolan

Inventor： Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Douglas E. Dolan

IPC: H01L27/088

CPC classification number: H01L23/49513 ,  H01L23/49524 ,  H01L24/05 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/2518 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83856 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/37099

Abstract: Disclosed are semiconductor dice with backside trenches filled with elastic conductive material. The trenches reduce the on-state resistances of the devices incorporated on the dice. The elastic conductive material provides a conductive path to the backsides of the die with little induced stress on the semiconductor die caused by thermal cycling. Also disclosed are packages using the dice, and methods of making the dice.

Abstract translation: 公开了具有填充有弹性导电材料的背面沟槽的半导体裸片。 沟槽减小了掺入骰子的器件的导通电阻。 弹性导电材料为模具的背面提供导电路径，在半导体芯片上由热循环引起的微小应力。 还公开了使用骰子的包裹以及制造骰子的方法。