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1.发明授权
公开(公告)号：US4906542A
公开(公告)日：1990-03-06
申请号：US183998
申请日：1988-04-20
IPC分类号： G03G5/082
CPC分类号： G03G5/08214
摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.
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公开(公告)号：US06344608B2
公开(公告)日：2002-02-05
申请号：US09340464
申请日：1999-06-28
申请人： Toshimitsu Kariya , Masafumi Sano , Yutaka Nishio
发明人： Toshimitsu Kariya , Masafumi Sano , Yutaka Nishio
IPC分类号： H01L310216
CPC分类号： H01L31/076 , H01L31/022483 , H01L31/075 , H01L31/1824 , H01L31/1884 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic element comprising a p-type semiconductor layer and a transparent conductive layer comprised of indium tin oxide bonded to each other at a surface is provided. The sum of tin oxide content and tin content of the transparent conductive layer varies in the layer thickness direction and is lowest at the bonding surface of the p-type semiconductor layer and the transparent conductive layer. Thus provided is a photovoltaic element which has a high photoelectric conversion efficiency with decreased reduction even when exposed to an intense light for a long period.
摘要翻译： 提供了包括p型半导体层和由表面上彼此结合的氧化铟锡构成的透明导电层的光电元件。 透明导电层的氧化锡含量和锡含量的总和在层厚度方向上变化，并且在p型半导体层和透明导电层的接合表面处最低。 因此，提供了即使长时间暴露于强光时也具有高的光电转换效率，降低的减少的光电元件。
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公开(公告)号：US5527396A
公开(公告)日：1996-06-18
申请号：US398071
申请日：1995-03-03
申请人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
发明人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
IPC分类号： C23C16/50 , C23C16/511 , C23C16/517 , C30B25/02 , C30B25/16 , G03G5/082 , H01L21/205 , H01L29/45 , H01L29/49 , H01L29/786 , H01L31/04 , H01L31/052 , H01L31/075 , H01L31/20 , C23C16/00
CPC分类号： H01L31/076 , C23C16/517 , G03G5/08264 , G03G5/08278 , H01L29/458 , H01L29/4908 , H01L29/78603 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.
摘要翻译： 一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。 通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。 在能量上比微波能量高的同时施加RF能量。 微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。
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4.发明授权
公开(公告)号：US4981766A
公开(公告)日：1991-01-01
申请号：US403396
申请日：1989-09-06
IPC分类号： G03G5/082
CPC分类号： G03G5/08214
摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.
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公开(公告)号：US4906543A
公开(公告)日：1990-03-06
申请号：US184872
申请日：1988-04-21
IPC分类号： G03G5/082
CPC分类号： G03G5/08228
摘要： There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X), and containing at least either of germanium atoms or tin atoms in a layer region in contact with said lower layer. The light receiving member for electrophotography exhibits outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments.
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6.发明授权公开(公告)号：US06472248B2
公开(公告)日：2002-10-29
申请号：US09758345
申请日：2001-01-12
申请人： Atsushi Shiozaki , Masafumi Sano , Toshimitsu Kariya , Takaharu Kondo , Makoto Higashikawa , Koichi Matsuda
发明人： Atsushi Shiozaki , Masafumi Sano , Toshimitsu Kariya , Takaharu Kondo , Makoto Higashikawa , Koichi Matsuda
IPC分类号： H01L2100
CPC分类号： H01L31/03685 , H01L21/0237 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02675 , H01L31/028 , H01L31/03926 , H01L31/048 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.
摘要翻译： 一种具有叠层结构的光电元件，包括不含结晶相的第一半导体层，含有近似球形微晶相的第二半导体层，以及包含柱状微晶相的第三半导体层，该第三半导体层依次层叠，其中所述 所述第三半导体层侧的第二半导体层的平均尺寸大于所述第二半导体层在所述第一半导体层一侧的所述球形微晶相的平均尺寸。
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公开(公告)号：US6123824A
公开(公告)日：2000-09-26
申请号：US990566
申请日：1997-12-15
申请人： Masafumi Sano , Toshimitsu Kariya
发明人： Masafumi Sano , Toshimitsu Kariya
摘要： A photo-electricity generating device is produced through the steps of: immersing an electrode and an electroconductive substrate in an aqueous solution comprising nitrate ions and zinc ions, supplying a current passing through a gap between the electrode and the electroconductive substrate to form a first zinc oxide layer on the electroconductive substrate, etching the first zinc oxide layer, and forming a semiconductor layer on the zinc oxide layer. The zinc oxide layer may preferably be formed in two zinc oxide layers under different electrudeposition conditions. In this case, the etching step may preferably be performed between steps for forming these zinc oxide layers. The zinc oxide layer is provided with an unevenness at its surface suitable for constituting a light-confining layer of a resultant photo-electricity generating device.
摘要翻译： 通过以下步骤制造光电产生装置：将电极和导电基材浸入包含硝酸根离子和锌离子的水溶液中，提供通过电极和导电基材之间的间隙的电流，以形成第一锌 氧化物层，蚀刻第一氧化锌层，以及在氧化锌层上形成半导体层。 氧化锌层可以优选在不同的电沉积条件下形成在两个氧化锌层中。 在这种情况下，优选在用于形成这些氧化锌层的步骤之间进行蚀刻步骤。 氧化锌层在其表面上具有适于构成所得光电产生装置的光限制层的凹凸。
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公开(公告)号：US5417770A
公开(公告)日：1995-05-23
申请号：US81222
申请日：1993-06-25
申请人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
发明人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
IPC分类号： C23C16/50 , C23C16/511 , C23C16/517 , C30B25/02 , C30B25/16 , G03G5/082 , H01L21/205 , H01L29/45 , H01L29/49 , H01L29/786 , H01L31/04 , H01L31/052 , H01L31/075 , H01L31/20 , H01L31/18
CPC分类号： H01L31/076 , C23C16/517 , G03G5/08264 , G03G5/08278 , H01L29/458 , H01L29/4908 , H01L29/78603 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.
摘要翻译： 一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。 通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。 在能量上比微波能量高的同时施加RF能量。 微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。
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9.发明授权
公开(公告)号：US4886723A
公开(公告)日：1989-12-12
申请号：US182156
申请日：1988-04-15
IPC分类号： G03G5/082
CPC分类号： G03G5/08228
摘要： There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X). The light receiving member for electrophotography exhibits outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments.
摘要翻译： 提供了一种用于电子照相的改进的光接收元件，其由铝支架和在所述铝支架上形成的具有光电导性的多层光接收层构成，其中所述多层光接收层由与所述支撑体接触的下层和 所述下层由至少含有铝原子（Al），硅原子（Si）和氢原子（H）的无机材料制成，并且其中所述铝原子（Al），硅原子（ Si）和氢原子（H）跨越层厚度不均匀地分布，所述上层由以硅原子（Si）为基体和氢原子（H）或卤素（H）中的至少一个的非单一材料制成 原子（X）。 用于电子照相的光接收元件具有出色的电特性，光学特性，光导特性，耐久性，图像特性和对使用环境的适应性。
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10.发明授权
公开(公告)号：US4882251A
公开(公告)日：1989-11-21
申请号：US183701
申请日：1988-04-19
IPC分类号： G03G5/082
CPC分类号： G03G5/08228
摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing atoms to control conductivity in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.
摘要翻译： 一种由铝支架和形成在铝支架上形成的具有光电导性的多层光接收层构成的电子摄影用光接收元件，其中多层光接收层由与支撑体接触的下层和上层组成，下层 由至少含有铝原子（Al），硅原子（Si）和氢原子（H）的无机材料制成，并且其中铝原子（Al），硅原子（Si）和氢原子（H ）不均匀地分布在层厚度上，上层由以硅原子（Si）为基体和氢原子（H）或卤素原子（X）中的至少一个组成的非单晶材料制成，并含有 原子以控制与下层相邻的层区域中的导电性。 用于电子照相的光接收元件可以克服所有上述问题，并且表现出非常优异的电性能，光学性能，光电导性，耐久性，图像特性和使用的环境性质。
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