公开(公告)号：US20110233689A1

公开(公告)日：2011-09-29

申请号：US13133092

申请日：2009-11-27

申请人： Masahiko Hata ,  Noboru Fukuhara ,  Hisashi Yamada ,  Shinichi Takagi ,  Masakazu Sugiyama ,  Mitsuru Takenaka ,  Tetsuji Yasuda ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii ,  Akihiro Ohtake ,  Jun Nara

发明人： Masahiko Hata ,  Noboru Fukuhara ,  Hisashi Yamada ,  Shinichi Takagi ,  Masakazu Sugiyama ,  Mitsuru Takenaka ,  Tetsuji Yasuda ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii ,  Akihiro Ohtake ,  Jun Nara

IPC分类号： H01L29/78 ,  H01L29/04 ,  H01L21/336 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01L29/045 ,  H01L29/20 ,  H01L29/7833 ,  H01L29/78681

摘要： There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material.

摘要翻译： 提供了一种半导体器件，其包括具有锌闪光体型晶体结构的III-V族化合物半导体，与III-V族化合物半导体的（111）面接触的绝缘材料， 相当于（111）面的III-V族化合物半导体，或相对于（111）面或与（111）面相当的面的偏角的平面，和与MIS接触的MIS型电极 具有绝缘材料并且包括金属导电材料。

公开(公告)号：US08835906B2

公开(公告)日：2014-09-16

申请号：US13310522

申请日：2011-12-02

申请人： Masahiko Hata ,  Tomoyuki Takada ,  Sadanori Yamanaka ,  Taro Itatani

发明人： Masahiko Hata ,  Tomoyuki Takada ,  Sadanori Yamanaka ,  Taro Itatani

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/103 ,  H01L27/144 ,  H01L31/052 ,  H01L31/0392 ,  G01J5/02

CPC分类号： H01L27/1446 ,  G01J5/024 ,  H01L31/0392 ,  H01L31/0543 ,  H01L31/1035 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

摘要： A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.

摘要翻译： 传感器包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由第3-5族化合物半导体晶格匹配或伪晶格匹配种子构件并且能够在吸收光或热时产生载体的光热吸收体，其中光热吸收体输出响应于 入射到光热吸收器中的入射光或被加到光热吸收器上的热量。 半导体晶片包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由3-5族化合物半导体晶格匹配或伪晶格匹配种子构件制成并且能够在吸收光或热时产生载体的光热吸收剂。

公开(公告)号：US08779471B2

公开(公告)日：2014-07-15

申请号：US13413216

申请日：2012-03-06

申请人： Masahiko Hata ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

发明人： Masahiko Hata ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L21/26553 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66318 ,  H01L29/66522

摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0

摘要翻译： 提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。 这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成 的In x Ga 1-x As y 1 P 1-y 1（0

公开(公告)号：US08835980B2

公开(公告)日：2014-09-16

申请号：US13310614

申请日：2011-12-02

申请人： Masahiko Hata ,  Taro Itatani

发明人： Masahiko Hata ,  Taro Itatani

IPC分类号： H01L31/0264 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/18 ,  H01L31/076 ,  H01L27/142

CPC分类号： H01L31/0522 ,  H01L27/142 ,  H01L31/028 ,  H01L31/03046 ,  H01L31/0392 ,  H01L31/0475 ,  H01L31/0543 ,  H01L31/0687 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided is a semiconductor wafer including: a base wafer containing silicon; an inhibitor that has been formed on the base wafer, has an aperture in which a surface of the base wafer is exposed, and inhibits crystal growth; and a light-absorptive structure that has been formed inside the aperture in contact with a surface of the base wafer exposed inside the aperture, where the light-absorptive structure includes a first semiconductor and a second semiconductor.

摘要翻译： 提供一种半导体晶片，其包括：含有硅的基底晶片; 已经形成在基底晶片上的抑制剂具有露出基底晶片的表面的孔，并抑制晶体生长; 以及已经形成在所述孔内的与所述孔内露出的所述基底晶片的表面接触的光吸收结构，其中所述光吸收结构包括第一半导体和第二半导体。

公开(公告)号：US20120228673A1

公开(公告)日：2012-09-13

申请号：US13413216

申请日：2012-03-06

申请人： Masahiko HATA ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

发明人： Masahiko HATA ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/7786 ,  H01L21/26553 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66318 ,  H01L29/66522

摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0

摘要翻译： 提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。 这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成 的In x Ga 1-x As y 1 P 1-y 1（0

公开(公告)号：US5945720A

公开(公告)日：1999-08-31

申请号：US900826

申请日：1997-07-25

申请人： Taro Itatani ,  Kazuhiko Matsumoto ,  Masami Ishii ,  Tadashi Nakagawa ,  Yoshinobu Sugiyama

发明人： Taro Itatani ,  Kazuhiko Matsumoto ,  Masami Ishii ,  Tadashi Nakagawa ,  Yoshinobu Sugiyama

IPC分类号： H01L31/0232 ,  H01L31/108

CPC分类号： H01L31/108 ,  H01L31/0232

摘要： A high-speed, high-sensitivity photo-receiving device has a light-absorbing substrate, on which a pair of electrodes are provided. An insulative optical guide is located over an exposed surface portion of the substrate constituting an optical window. The optical guide is permeable to incident light, and the width of the optical guide does not exceed the wavelength of the incident light.

摘要翻译： 高速，高灵敏度的光接收装置具有光吸收基板，在其上设置有一对电极。 绝缘光导件位于构成光学窗口的基板的暴露表面部分的上方。 光导通透入入射光，光导的宽度不超过入射光的波长。

公开(公告)号：US5737082A

公开(公告)日：1998-04-07

申请号：US506385

申请日：1995-07-24

申请人： Taro Itatani ,  Tadashi Nakagawa ,  Yoshinobu Sugiyama ,  Kimihiro Ohta

发明人： Taro Itatani ,  Tadashi Nakagawa ,  Yoshinobu Sugiyama ,  Kimihiro Ohta

IPC分类号： G01R15/24 ,  G01J4/00 ,  G01R19/00 ,  G01R29/12 ,  G01R29/14 ,  G01R31/302

CPC分类号： G01R15/242 ,  G01J4/00

摘要： An apparatus of measuring an electric signal comprises a laser device, optical elements, an electrooptic crystal, a photoelectric converter, and an electric circuit. The electrooptic crystal is selected from the materials in the type of having properties of changing its refractive index in the direction of its optic major axes and the direction of these axes by a function of an applied electric field. In the apparatus, the electrooptic crystal is placed in the electric field applied by an electric circuit under measurement. A laser beam emitted from the laser device is incident on the electrooptic crystal. A reflected light passed through the crystal is resolved into rays in two polarized direction. Each ray is subjected to a photoelectric conversion by passing through the photoelectric converter and exerted as an electric output. A differential signal of the electric output is defined as a measurement signal. By selecting two polarized directions of the laser beam by a half-wave plate as the optical element, two signals corresponding to the changes in the refractive index and optic major axes of the crystal. Two component of a vector of the electric field can be obtained by a first order combination of these signals.

摘要翻译： 测量电信号的装置包括激光装置，光学元件，电光晶体，光电转换器和电路。 电光晶体选自具有通过施加的电场的函数在其光学主轴的方向上改变其折射率的特性的类型的材料和这些轴的方向。 在该装置中，将电光晶体放置在由测量电路施加的电场中。 从激光装置发射的激光束入射到电光晶体上。 通过晶体的反射光在两个偏振方向被分解为光线。 每个射线通过光电转换器进行光电转换并作为电输出施加。 电输出的差分信号被定义为测量信号。 通过用半波片选择激光束的两个偏振方向作为光学元件，对应于晶体的折射率和光学主轴的变化的两个信号。 可以通过这些信号的一阶组合来获得电场矢量的两个分量。

公开(公告)号：US20060082937A1

公开(公告)日：2006-04-20

申请号：US10514721

申请日：2002-05-24

申请人： Taro Itatani ,  Shuichi Yagi

发明人： Taro Itatani ,  Shuichi Yagi

IPC分类号： H02H9/00

CPC分类号： H01P3/003 ,  H01L27/08

摘要： An electric signal transmission line includes a signal electrode portion (2), a ground electrode portion (3) and a dielectric portion (4) formed on a semiconductor substrate (1). The signal electrode portion (2) has a metal electrode (21) through which the electric signals flow, an upper conductive semiconductor (22) and a lower conductive semiconductor (23). The ground electrode portion (3) has a grounded metal electrode (31) and a conductive semiconductor (32). With the upper conductive semiconductor (22) and lower conductive semiconductor (23) having opposite polarities, the metal electrode (21) of the signal electrode portion 2 and the metal electrode (31) of the ground electrode portion (3) are connected with a semiconductor PN junction. A dielectric material fills and covers a region between the metal electrode (21) of the signal electrode portion (2) and the metal electrode (31) of the ground electrode portion (3) through which a line of electric force runs to form the dielectric portion (4). With this, it is possible to provide an electric signal transmission line that is capable of high-speed electric signal propagation and can be manufactured with stable quality using current semiconductor manufacturing processes.

摘要翻译： 电信号传输线包括形成在半导体衬底（1）上的信号电极部分（2），接地电极部分（3）和电介质部分（4）。 信号电极部分（2）具有电信号流过的金属电极（21），上导电半导体（22）和下导电半导体（23）。 接地电极部分（3）具有接地金属电极（31）和导电半导体（32）。 通过具有相反极性的上导电半导体（22）和下导电半导体（23），信号电极部分2的金属电极（21）和接地电极部分（3）的金属电极（31）与 半导体PN结。 电介质材料填充并覆盖信号电极部分（2）的金属电极（21）和接地电极部分（3）的金属电极（31）之间的区域，电力线穿过该区域形成电介质 部分（4）。 由此，可以提供能够进行高速电信号传播的电信号传输线，并且可以使用当前半导体制造工艺以稳定的质量制造。

公开(公告)号：US07345326B2

公开(公告)日：2008-03-18

申请号：US10514721

申请日：2002-05-24

申请人： Taro Itatani ,  Shuichi Yagi

发明人： Taro Itatani ,  Shuichi Yagi

IPC分类号： H01L29/778

CPC分类号： H01P3/003 ,  H01L27/08

摘要： An electric signal transmission line includes a signal electrode portion, a ground electrode portion and a dielectric portion formed on a semiconductor substrate. The signal electrode portion has a metal electrode through which an electric signals flows. The ground electrode portion has a grounded metal electrode. The metal electrode of the signal electrode portion and the metal electrode of the ground electrode portion are connected with a semiconductor PN junction. The dielectric portion is formed by using a dielectric to cover a region between the metal electrode of the signal electrode portion and the metal electrode of the ground electrode portion through which a line of electric force runs and is a region in which energy of transmitted electric signals exist.

摘要翻译： 电信号传输线包括信号电极部分，接地电极部分和形成在半导体衬底上的电介质部分。 信号电极部具有电信号流过的金属电极。 接地电极部分具有接地的金属电极。 信号电极部的金属电极和接地电极部的金属电极与半导体PN结连接。 电介质部分是通过使用电介质来覆盖信号电极部分的金属电极和接地电极部分的金属电极之间的区域，电力线通过该区域运行，并且是传输电信号的能量的区域 存在。

公开(公告)号：US06861848B2

公开(公告)日：2005-03-01

申请号：US10279846

申请日：2002-10-25

申请人： Yuji Kasai ,  Hirokazu Nosato ,  Masahiro Murakawa ,  Taro Itatani ,  Tetsuya Higuchi

发明人： Yuji Kasai ,  Hirokazu Nosato ,  Masahiro Murakawa ,  Taro Itatani ,  Tetsuya Higuchi

IPC分类号： G01D5/24 ,  G01D5/241 ,  H01S3/086 ,  H01S3/105 ,  H01S3/139 ,  G01R27/26

CPC分类号： G01D5/24 ,  G01D5/2417 ,  H01S3/105

摘要： A capacitance position sensor includes a pair of opposed tabular electrodes, an LC oscillator circuit having a toroidal core winding and whose oscillating frequency varies with change in capacitance between the pair of electrodes, and an arithmetic processing unit for calculating an absolute value of a distance between the electrodes from the oscillating frequency of the oscillator circuit. A position controller includes a stationary member formed with one electrode of the pair of electrodes of the position sensor, a movable member on which the other electrode of the pair of electrodes is formed, and moving device for moving the movable member relative to the stationary member.

摘要翻译： 电容位置传感器包括一对相对的平板电极，具有环形铁芯绕组的振荡频率随着一对电极之间的电容变化而变化的LC振荡器电路，以及运算处理单元，用于计算在一对电极之间的距离的绝对值 电极从振荡电路的振荡频率。 位置控制器包括：固定构件，其形成有位置传感器的一对电极的一个电极，形成有该对电极的另一个电极的可动构件;以及用于使可动构件相对于固定构件移动的移动装置 。