公开(公告)号：US20130243680A1

公开(公告)日：2013-09-19

申请号：US13798702

申请日：2013-03-13

申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Chiharu KIMURA ,  Naoya MIYOSHI ,  Akishige MURAKAMI ,  Junichi WADA

发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Chiharu KIMURA ,  Naoya MIYOSHI ,  Akishige MURAKAMI ,  Junichi WADA

IPC分类号： C01B21/064 ,  C01B21/06

CPC分类号： C01B21/064 ,  C01B21/0632 ,  C30B9/06 ,  C30B29/403 ,  C30B29/406

摘要： A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane.

摘要翻译： 13族氮化物晶体具有包含氮原子的六方晶系结构和选自B，Al，Ga，In和Tl中的至少一种类型的金属原子。 13族氮化物晶体在多个方向上具有基面位错。 基面位错的位错密度高于c面穿透位错的位错密度。

公开(公告)号：US20170022629A1

公开(公告)日：2017-01-26

申请号：US15124794

申请日：2014-11-27

申请人： Takashi SATOH ,  Seiji SARAYAMA ,  Masahiro HAYASHI ,  Naoya MIYOSHI ,  Chiharu KIMURA ,  Junichi WADA

发明人： Takashi SATOH ,  Seiji SARAYAMA ,  Masahiro HAYASHI ,  Naoya MIYOSHI ,  Chiharu KIMURA ,  Junichi WADA

IPC分类号： C30B9/10 ,  C30B29/40

CPC分类号： C30B9/10 ,  C30B9/12 ,  C30B29/406 ,  C30B35/007

摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.

摘要翻译： 制造氮化镓晶体的方法包括通过将氮溶解在包含镓和钠的混合熔体中来生长氮化镓晶体5，并且通过使合金51和合金51反应而收集从包含镓和钠的合金51中分离的镓55 使钠离子并从合金中分离钠离子和镓55的液体52。

公开(公告)号：US20160348272A1

公开(公告)日：2016-12-01

申请号：US15115154

申请日：2015-02-19

申请人： Masahiro HAYASHI ,  Takashi SATOH ,  Naoya MIYOSHI ,  Junichi Wada ,  Seiji SARAYAMA

发明人： Masahiro HAYASHI ,  Takashi SATOH ,  Naoya MIYOSHI ,  Junichi Wada ,  Seiji SARAYAMA

IPC分类号： C30B19/06 ,  C30B29/68 ,  C30B9/12 ,  C30B29/40 ,  C30B19/02 ,  C30B19/12

CPC分类号： C30B19/066 ,  C30B9/10 ,  C30B9/12 ,  C30B19/02 ,  C30B19/06 ,  C30B19/12 ,  C30B29/406 ,  C30B29/68 ,  H01L21/0245 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075

摘要： In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al2O3. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.

摘要翻译： 在13族氮化物晶体的制造方法中，将由13族氮化物晶体构成的晶种配置在含有碱金属和13族元素的混合熔体中，向混合熔体供给氮以使第13族生长 氮化物晶体在晶种的主平面上。 晶种通过气相外延制造。 在容纳混合熔体的反应容器中与接触构件接触的至少一部分由Al 2 O 3制成。 在晶种和生长氮化物晶体之间形成有具有比生长组13氮化物晶体的发光发光峰的波长长的光致发光峰的界面层。

公开(公告)号：US20130061799A1

公开(公告)日：2013-03-14

申请号：US13592555

申请日：2012-08-23

申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

IPC分类号： C30B19/02

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/406

摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

摘要翻译： 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度L为9.7mm以上，c面的长度L与晶体直径d的比L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

公开(公告)号：US20170204534A1

公开(公告)日：2017-07-20

申请号：US15455339

申请日：2017-03-10

申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

IPC分类号： C30B29/40 ,  H01L33/32 ,  H01L33/16 ,  C30B9/12

CPC分类号： C30B29/406 ,  C30B9/12 ,  H01L33/16 ,  H01L33/32

摘要： A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.

公开(公告)号：US20130064749A1

公开(公告)日：2013-03-14

申请号：US13609077

申请日：2012-09-10

申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

IPC分类号： C01B21/06 ,  C01B21/072 ,  C01B21/064

CPC分类号： C30B7/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/607

摘要： A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

摘要翻译： 具有六方晶系结构并且至少包含氮原子和至少一个选自B，Al，Ga，In和Tl的金属原子的13族氮化物晶体。 13族氮化物晶体包括设置在与c轴交叉的横截面的内侧的第一区域，设置在截面最外侧的第三区域，并且具有与第一区域不同的晶体特性， 所述第二区域至少部分地设置在所述第一区域和所述第三区域之间，所述第二区域是晶体生长的过渡区域，并且具有与所述第一区域和所述第三区域不同的晶体特性。