公开(公告)号：US06822831B2

公开(公告)日：2004-11-23

申请号：US10074185

申请日：2002-02-12

申请人： Shoji Ikeda ,  Yuji Uehara ,  Ikuya Tagawa ,  Naoki Takeguchi ,  Masahiro Kakehi

发明人： Shoji Ikeda ,  Yuji Uehara ,  Ikuya Tagawa ,  Naoki Takeguchi ,  Masahiro Kakehi

IPC分类号： G11B5147

CPC分类号： H01F10/147 ,  G11B5/3109 ,  H01F10/131 ,  H01F10/138 ,  H01F10/265 ,  Y10S428/90

摘要： An object of the present invention is to provide a recording head having a magnetic pole simultaneously possessing a high saturation magnetic flux density, a high permeability and a high electric resistivity, and the magnetic pole of the recording head is a polycrystalline film comprising Fe whose content is not less than 57.5 atomic % and not more than 94.5 atomic %; one or more kinds of elements selected from the element group of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Rh, whose whole content is not less than 1 atomic % and not more than 15 atomic %; N whose content is not less than 0.5 atomic % and not more than 10 atomic %; and O whose content is not less than 1.5 atomic % and not more than 22.5 atomic %.

摘要翻译： 本发明的目的是提供一种具有同时具有高饱和磁通密度，高磁导率和高电阻率的磁极的记录头，记录头的磁极是包含Fe的多晶膜，其含量 不小于57.5原子％且不大于94.5原子％; 选自Al，B，Ga，Si，Ge，Y，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W和Rh的元素组中的一种或多种元素，其全部含量不少于 1原子％以上15原子％以下。 N含量不小于0.5原子％且不大于10原子％; 其含量不小于1.5原子％且不大于22.5原子％。

公开(公告)号：US06813824B2

公开(公告)日：2004-11-09

申请号：US10328542

申请日：2002-12-23

申请人： Minoru Hasegawa ,  Yoshinori Ohtsuka ,  Yuji Uehara ,  Takashi Sekikawa ,  Hiroshi Maeda ,  Masahiro Kakehi ,  Ikuya Tagawa ,  Tomoko Kutsuzawa ,  Syuji Nishida

发明人： Minoru Hasegawa ,  Yoshinori Ohtsuka ,  Yuji Uehara ,  Takashi Sekikawa ,  Hiroshi Maeda ,  Masahiro Kakehi ,  Ikuya Tagawa ,  Tomoko Kutsuzawa ,  Syuji Nishida

IPC分类号： G11B5127

CPC分类号： G11B5/313 ,  G11B5/17 ,  G11B5/3163 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49073

摘要： A liquid resist is introduced between adjacent conductive lines of a coil pattern girdling around a magnetic core piece. When the liquid resist is cured, an insulating resin filler can be fixed between the adjacent conductive lines of the coil pattern. An insulating metallic layer is formed to extend over the insulting resin filler and the conductive lines of the coil pattern. Thereafter, the insulating metallic layer is subjected to a flattening grinding treatment until at least a part of the conductive line is exposed at a flattened surface. Of the resist, of a higher fluidity, penetrates in every hole and corner between the adjacent conductive lines, the gap defined between the adjacent conductive lines is fully filled with the insulating material. No voids remain in the gap. The conductive line of the coil can be reliably prevented from corrosion or oxidation. Moreover, a relatively brittle of fragile insulating resin filler is reliably prevented from being subjected to the flattening.

公开(公告)号：US06567239B1

公开(公告)日：2003-05-20

申请号：US09716345

申请日：2000-11-20

申请人： Minoru Hasegawa ,  Yoshinori Ohtsuka ,  Yuji Uehara ,  Takashi Sekikawa ,  Hiroshi Maeda ,  Masahiro Kakehi ,  Ikuya Tagawa ,  Tomoko Kutsuzawa ,  Syuji Nishida

发明人： Minoru Hasegawa ,  Yoshinori Ohtsuka ,  Yuji Uehara ,  Takashi Sekikawa ,  Hiroshi Maeda ,  Masahiro Kakehi ,  Ikuya Tagawa ,  Tomoko Kutsuzawa ,  Syuji Nishida

IPC分类号： G11B5147

CPC分类号： G11B5/313 ,  G11B5/17 ,  G11B5/3163 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49073

摘要： A liquid resist is introduced between adjacent conductive lines of a coil pattern girdling around a magnetic core piece. When the liquid resist is cured, an insulating resin filler can be fixed between the adjacent conductive lines of the coil pattern. An insulating metallic layer is formed to extend over the insulting resin filler and the conductive lines of the coil pattern. Thereafter, the insulating metallic layer is subjected to a flattening grinding treatment until at least a part of the conductive line is exposed at a flattened surface. Since the liquid of the resist, of a higher fluidity, penetrates in every hole and corner between the adjacent conductive lines, the gap defined between the adjacent conductive lines is fully filled with the insulating material. No voids remain in the gap. The conductive line of the coil can be reliably prevented from corrosion or oxidation. Moreover, a relatively brittle of fragile insulating resin filler is reliably prevented from being subjected to the flattening grinding treatment.

摘要翻译： 在围绕磁芯片的线圈图案的相邻导线之间引入液体抗蚀剂。 当液体抗蚀剂固化时，可以在线圈图案的相邻导电线之间固定绝缘树脂填料。 绝缘金属层形成为在绝缘树脂填料和线圈图案的导线上延伸。 此后，对绝缘金属层进行平坦化研磨处理，直到导电线的至少一部分在平坦表面露出。 由于具有较高流动性的抗蚀剂的液体渗透在相邻导电线之间的每个孔和拐角处，所以相邻导电线之间限定的间隙被绝缘材料完全充满。 间隙中没有空隙。 可以可靠地防止线圈的导线腐蚀或氧化。 此外，可靠地防止相对脆弱的脆性绝缘树脂填料进行平坦化研磨处理。

公开(公告)号：US6087026A

公开(公告)日：2000-07-11

申请号：US957188

申请日：1997-10-24

申请人： Masahiro Kakehi ,  Yuji Uehara

发明人： Masahiro Kakehi ,  Yuji Uehara

IPC分类号： G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  G11B5/66

CPC分类号： G11B5/3932 ,  Y10S428/90 ,  Y10T428/1121

摘要： A MR head employs a biasing soft magnetic film of a FeXN-based alloy which undergoes no change in the direction of its axis of easy magnetization even when subject to heat treatment. The MR head has an anisotropic magnetic field size of 10 Oe or greater, and electrical resistance p of 70 .mu..OMEGA.cm or greater, and a saturation flux density Bs of 1 T or greater. The direction of the axis of easy magnetization of the biasing soft magnetic film is oriented perpendicular to the direction of sense current, and the direction of the axis of easy magnetization of the MR film is oriented parallel to the sense current direction.

摘要翻译： MR头采用FeXN基合金的偏压软磁膜，即使在进行热处理时也不会发生易磁化轴方向的变化。 MR磁头的各向异性磁场尺寸为10Oe以上，电阻p为70μΩ/ cm以上，饱和磁通密度Bs为1T以上。 偏置软磁膜的容易磁化轴的方向与感应电流的方向垂直，MR膜的易磁化轴方向平行于感应电流方向。

公开(公告)号：US20090207532A1

公开(公告)日：2009-08-20

申请号：US12371011

申请日：2009-02-13

申请人： Atsushi Furuya ,  Yuji Uehara ,  Kenji Noma

发明人： Atsushi Furuya ,  Yuji Uehara ,  Kenji Noma

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/307

摘要： A magneto resistance effect device includes a fixed magnetization portion including a ferromagnetic material, in which the magnetization direction can be fixed, and a tunnel barrier layer including high band gap metal oxide and low band gap metal oxide, and arranged on the fixed magnetization portion. The device includes a free magnetization portion including a ferromagnetic material, arranged on the tunnel barrier layer, in which the magnetization can be changed.

摘要翻译： 磁阻效应器件包括固定磁化部分，该固定磁化部分包括其中可固定磁化方向的铁磁材料和包括高带隙金属氧化物和低带隙金属氧化物的隧道势垒层，并且布置在固定磁化部分上。 该装置包括布置在隧道势垒层上的铁磁材料的自由磁化部分，其中磁化可以改变。

公开(公告)号：US20090169915A1

公开(公告)日：2009-07-02

申请号：US12340236

申请日：2008-12-19

申请人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara ,  Kazuyuki Sunaga

发明人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara ,  Kazuyuki Sunaga

IPC分类号： B32B37/14 ,  B32B15/00

CPC分类号： B32B37/06 ,  B32B2307/208 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2309/68 ,  B32B2311/00 ,  B32B2457/00 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T156/10 ,  Y10T428/12465

摘要： The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.

摘要翻译： 本发明的方法提供了一种磁阻效应元件，其能够具有对应于高密度记录的高MR比，并且适当地应用于磁阻器件，即使势垒层变薄以降低磁阻效应元件的电阻 。 制造磁阻效应元件的方法，其包括由氧化金属构成的阻挡层，与阻挡层的一个表面接触的第一磁性层和与其另一个表面接触的第二磁性层，包括以下步骤： 使用由氧化金属构成的靶，在第一磁性层上形成阻挡层; 并将第二磁性层层叠在阻挡层上。 在层叠第二磁性层之前对阻挡层进行退火。

公开(公告)号：US20090168270A1

公开(公告)日：2009-07-02

申请号：US12342419

申请日：2008-12-23

申请人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara

发明人： Migaku Takahashi ,  Masakiyo Tsunoda ,  Koujiro Komagaki ,  Yuji Uehara

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295

摘要： In comparison with conventional exchange-coupled elements, the exchange-coupled element of the present invention has greater unidirectional magnetization anisotropy. The exchange-coupled element comprises: an ordered antiferromagnetic layer; and a pinned magnetic layer being exchange-coupled with the ordered antiferromagnetic layer, the pinned magnetic layer having unidirectional magnetization anisotropy. The pinned magnetic layer is constituted by a first pinned magnetic layer having a composition, which can have a face-centered cubic lattice structure, and a second pinned magnetic layer having a composition, which can have a body-centered cubic lattice structure.

摘要翻译： 与传统的交换耦合元件相比，本发明的交换耦合元件具有更大的单向磁化各向异性。 交换耦合元件包括：有序反铁磁层; 并且被钉扎的磁性层与有序的反铁磁层交换耦合，钉扎的磁性层具有单向磁化各向异性。 钉扎磁性层由具有面心立方晶格结构的组成的第一固定磁性层和具有体心立方晶格结构的具有组成的第二固定磁性层构成。

公开(公告)号：US20060209458A1

公开(公告)日：2006-09-21

申请号：US11158257

申请日：2005-06-21

申请人： Junichi Kane ,  Yuji Uehara ,  Kenji Noma ,  Akifumi Chikazawa

发明人： Junichi Kane ,  Yuji Uehara ,  Kenji Noma ,  Akifumi Chikazawa

IPC分类号： G11B5/147

CPC分类号： G11B5/3116 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3146 ,  H01F10/14 ,  H01F10/16 ,  H01F10/265

摘要： The soft magnetic film has superior soft magnetic characteristics and is suitable for a thin film magnetic head. The soft magnetic film of the present invention comprises: a magnetic base layer including a ferromagnetic element; and a ferromagnetic layer being piled on the magnetic base layer. The soft magnetic film has uniaxial magnetic anisotropy. The magnetic base layer includes at least one element selected from Fe, Ni and Co as the ferromagnetic element.

摘要翻译： 软磁膜具有优良的软磁特性，适用于薄膜磁头。 本发明的软磁性膜包括：包含铁磁性元件的磁性基层; 并且铁磁层堆叠在磁性基底层上。 软磁膜具有单轴磁各向异性。 磁性基层包括选自Fe，Ni和Co中的至少一种元素作为铁磁性元素。

公开(公告)号：US06970324B2

公开(公告)日：2005-11-29

申请号：US10299177

申请日：2002-11-19

申请人： Shoji Ikeda ,  Takayuki Kubomiya ,  Ikuya Tagawa ,  Yuji Uehara

发明人： Shoji Ikeda ,  Takayuki Kubomiya ,  Ikuya Tagawa ,  Yuji Uehara

IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F10/16 ,  H01F10/26

CPC分类号： H01F10/26 ,  G11B5/3109 ,  G11B5/313 ,  G11B5/3967 ,  H01F10/16

摘要： A soft magnetic film includes a ferromagnetic layer. The ferromagnetic layer is laid over a non-magnetic substructure including ferromagnetic atoms. The uniaxial magnetic anisotropy may be established in the ferromagnetic layer. Since a magnetic property is not required in the substructure under the ferromagnetic layer, the soft magnetic film of this type may be utilized for purposes of wider variations.

摘要翻译： 软磁性膜包括铁磁层。 铁磁层铺设在包括铁磁原子的非磁性子结构之上。 可以在铁磁层中建立单轴磁各向异性。 由于在铁磁层下的亚结构中不需要磁性，所以这种类型的软磁膜可以用于较宽的变化。

公开(公告)号：US06605414B2

公开(公告)日：2003-08-12

申请号：US09439724

申请日：1999-11-12

申请人： Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Ei Yano ,  Takahisa Namiki ,  Hiroshi Shirataki ,  Keita Ohtsuka ,  Michiaki Kanamine ,  Yuji Uehara

发明人： Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Ei Yano ,  Takahisa Namiki ,  Hiroshi Shirataki ,  Keita Ohtsuka ,  Michiaki Kanamine ,  Yuji Uehara

IPC分类号： G03F730

CPC分类号： G11B5/3903 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/398 ,  Y10S438/911

摘要： A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.

摘要翻译： 本发明的磁电阻头的制造方法包括以下步骤：在构成磁阻器件的多层膜上形成有机膜，在有机膜上形成由抗蚀剂或无机膜形成的上层膜，使有机膜和上层 薄膜，从上部膜图案的边缘向内切割成有机膜图案的边缘，使得形成在上部膜和多层膜上的薄膜的颗粒不与有机膜图案的侧部接触。