-
1.发明申请Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal 审中-公开用于拉拔单晶的石英玻璃坩埚和用于拉制单晶硅的石英玻璃坩埚的制造方法公开(公告)号：US20100139549A1
公开(公告)日：2010-06-10
申请号：US11922422
申请日：2006-05-25
CPC分类号： C30B29/06 , C03B19/095 , C30B15/10 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： The present invention is a quartz glass crucible 5 for pulling a silicon single crystal, comprising at least an outer layer portion 23 being a translucent glass layer containing multiple bubbles in it and an inner layer portion 24 being a transparent quartz glass layer having no bubbles and a smooth surface, formed on the inner surface of the outer layer portion 23, wherein the outer layer portion 23 contains bubbles of 0.1 to 0.3 mm in diameter at the density of 1.5 to 5.0×104 bubbles/cm3. Thus, there are provided a quartz glass crucible for pulling a silicon single crystal, the quartz glass crucible being increased in mechanical strength, making it possible to suppress deformation of a quartz glass crucible for pulling a silicon single crystal during a single crystal pulling process, thereby prevent degradation in yield rate due to dislocation in a single crystal and make the manufacture of a silicon single crystal highly efficient and a method of manufacturing the same quartz glass crucible.
摘要翻译： 本发明是一种用于拉制单晶硅的石英玻璃坩埚5，至少包括外层多数部分23和外层部分23，该外层部分23是包含多个气泡的半透明玻璃层，内层部分24是不含气泡的透明石英玻璃层， 形成在外层部23的内表面上的光滑表面，其中，外层部23的密度为1.5〜5.0×10 4个气泡/ cm 3的直径为0.1〜0.3mm的气泡。 因此，提供了用于拉制单晶硅的石英玻璃坩埚，石英玻璃坩埚的机械强度提高，从而可以抑制在单晶拉制工艺期间拉出硅单晶的石英玻璃坩埚的变形， 从而防止由于单晶中的位错导致的成品率的降低，并且制造高效的硅单晶，以及制造相同的石英玻璃坩埚的方法。
-
2.发明授权Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer 有权外延硅晶片，其制造方法和外延硅晶片的减渣公开(公告)号：US06565822B1
公开(公告)日：2003-05-20
申请号：US09646713
申请日：2000-09-21
IPC分类号： C09B3326
CPC分类号： C30B29/06 , C30B15/203
摘要： An epitaxial silicon wafer, which has no projections having a size of 100 nm or more and a height of 5 nm or more on an epitaxial layer, and a method for producing an epitaxial silicon wafer, wherein a single crystal ingot containing no I-region is grown when a silicon single crystal is grown by the CZ method, and an epitaxial layer is deposited on a silicon wafer sliced from the single crystal ingot and containing no I-region for the entire surface. An epitaxial wafer of high quality with no projection-like surface distortion observed as particles on an epi-layer surface is provided by forming a wafer having no I-region for the entire surface from a single crystal and depositing an epitaxial layer thereon, and a single crystal having no I-region for entire plane is produced with good yield and high productivity, thereby improving productivity of epi-wafers and realizing cost reduction.
摘要翻译： 在外延层上没有尺寸为100nm以上且高度为5nm以上的外延硅晶片和外延硅晶片的制造方法，其中，不含I区域的单晶锭 当通过CZ法生长硅单晶时生长，并且在从单晶锭切片的硅晶片上沉积外延层，并且在整个表面上不含有I区。 通过从单晶形成整个表面没有I区的晶片并在其上沉积外延层来提供高品质的外延晶片，其没有观察到作为外延表面上的颗粒的投射状表面变形， 以良好的产率和高生产率生产不具有整个平面的I区的单晶，从而提高外延片的生产率并实现成本降低。
-
公开(公告)号：US20140103492A1
公开(公告)日：2014-04-17
申请号：US14122356
申请日：2012-05-14
申请人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
发明人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
CPC分类号： H01L21/02024 , C30B15/00 , C30B15/14 , C30B15/20 , C30B15/203 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3221 , H01L29/30 , H01L29/34
摘要： The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.
摘要翻译： 本发明提供一种通过CZ方法生长的无缺陷硅单晶制造硅晶片的方法，该方法包括：制备通过对无缺陷的硅单晶进行切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。 因此，本发明的目的是提供一种可以以高产率制造硅晶片的方法，将LPD降低到最小的硅晶片，在检查步骤中具有低故障发生率的硅晶片，以及 出货阶段
-
公开(公告)号：US09337013B2
公开(公告)日：2016-05-10
申请号：US14122356
申请日：2012-05-14
申请人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
发明人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
IPC分类号： C30B15/00 , C30B15/14 , C30B15/20 , H01L21/02 , H01L21/322 , H01L29/30 , C30B29/06 , C30B33/00 , C30B33/02 , H01L29/34
CPC分类号： H01L21/02024 , C30B15/00 , C30B15/14 , C30B15/20 , C30B15/203 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3221 , H01L29/30 , H01L29/34
摘要： Methods for producing a silicon wafer from a defect-free silicon single crystal grown by a Czochralski (CZ) method are provided. The methods comprise: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which Light Point Defects (LPDs) are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.
摘要翻译： 提供了通过Czochralski（CZ）方法生长的无缺陷硅单晶制造硅晶片的方法。 所述方法包括：制备通过将无缺陷的硅单晶切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。 因此，本发明的目的是提供一种以高产率制造硅晶片的方法，将光点缺陷（LPD）降低到最小的硅晶片，故障发生率低的硅晶片 在检查步骤和出货阶段。
-
公开(公告)号：US20100126409A1
公开(公告)日：2010-05-27
申请号：US11988295
申请日：2006-04-27
申请人： Masahiro Sakurada , Izumi Fusegawa
发明人： Masahiro Sakurada , Izumi Fusegawa
IPC分类号： C30B15/20
CPC分类号： C30B15/305 , C30B30/04
摘要： This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils (25) are connected, is more than 5.5 (gauss/mm) and not more than 10 (gauss/mm) wherein ΔBr represents the amount of a variation in magnetic field strength from an original point (O) as the center part on a solid-liquid interface of a single crystal (12) to the inner wall (A) of a crucible on the surface of a melt, gauss; and ΔRc represents a radial distance from the original point (O) to the inner wall (A) of the crucible on the surface of the melt, mm. According to the production process of a single crystal, in growing a single crystal, the variation in temperature gradient near the solid-liquid interface can be minimized, and a high-quality single crystal having a desired defect zone in the direction of crystal growth can easily be produced with high productivity at high yield.
摘要翻译： 本发明提供了一种通过Chokralsky方法制造单晶的方法，其中施加了水平磁场，其特征在于，将单晶拉起，使得这样的放射状磁场强度梯度Dgr; Br /＆Dgr; Rc 连接磁场产生线圈（25）的中心的方向大于5.5（高斯/ mm）且不大于10（高斯/ mm），其中＆Dgr; Br表示来自原始磁场强度的磁场强度的变化量 （O）作为单晶（12）与熔体表面上的坩埚的内壁（A）的固 - 液界面的中心部分，高斯; 和R d表示从熔点表面上的坩埚的原始点（O）到内壁（A）的径向距离。 根据单晶的制造工序，在生长单晶时，固液界面附近的温度梯度的变化可以最小化，并且在晶体生长方向上具有期望缺陷区的高质量单晶可以 容易以高产率高产率生产。
-
6.发明申请Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer 有权制造p掺杂硅单晶和p掺杂n型硅单晶晶片的工艺公开(公告)号：US20060065184A1
公开(公告)日：2006-03-30
申请号：US10538878
申请日：2003-12-25
申请人： Masahiro Sakurada , Izumi Fusegawa
发明人： Masahiro Sakurada , Izumi Fusegawa
CPC分类号： C30B15/203 , C30B15/04 , C30B29/06
摘要： The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al (aluminum) concentration is 2×1012 atoms/cc or more. Thereby, there can be provided a method of easily and inexpensively producing a P(phosphorus)-doped silicon single crystal of defect-free region having an excellent capability of electrical characteristics to be high breakdown voltage, which contains neither, for example, V region, OSF region, nor large dislocation cluster (LSEPD, LFPD) region.
摘要翻译： 本发明是通过Czochralski法制备P（磷）掺杂硅单晶的方法，其中至少进行单晶的生长使得Al（铝）浓度为2×10 12， / SUP> atoms / cc以上。 因此，可以提供一种容易且廉价地制造具有优异的电特性能力高的无缺陷区域的P（磷）掺杂硅单晶为高的击穿电压的方法，其既不含V区 ，OSF区域，也不是大型位错簇（LSEPD，LFPD）区域。
-
7.发明申请Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal 有权硅单晶晶片和外延晶片，以及硅单晶的制造方法公开(公告)号：US20050252441A1
公开(公告)日：2005-11-17
申请号：US10512470
申请日：2003-05-07
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.
摘要翻译： 在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶 拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。 由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量 ，以及外延晶片。
-
公开(公告)号：US06913646B2
公开(公告)日：2005-07-05
申请号：US10204935
申请日：2001-12-26
摘要： There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of a ring by thermal oxidation treatment and there exists no defect region detected by Cu deposition. Thereby, there can be produced a silicon single crystal wafer according to CZ method, which does not belong to any of V region rich in vacancies, OSF region and I region rich in interstitial silicons, and can surely improve electric characteristics such as oxide dielectric breakdown voltage characteristics or the like under stable manufacture conditions.
摘要翻译： 可以提供根据切克劳斯基法生长的硅单晶晶片，其中通过热氧化处理，晶片的整个平面由OSF外部的N形区域以环形形状占据，并且不存在由 铜沉积。 由此，可以制造根据CZ法的硅单晶晶片，其不属于富含空位的V区域，富含间隙硅的OSF区域和I区域中的任何一个，并且可以确保改善诸如氧化物介电击穿的电特性 电压特性等。
-
9.发明授权Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal 有权用于制造单晶的石墨加热器，单晶的制造装置以及单晶的制造方法公开(公告)号：US07258744B2
公开(公告)日：2007-08-21
申请号：US10516347
申请日：2003-12-08
申请人： Masahiro Sakurada , Izumi Fusegawa , Satoshi Soeta , Makoto Iida
发明人： Masahiro Sakurada , Izumi Fusegawa , Satoshi Soeta , Makoto Iida
CPC分类号： C30B15/14 , Y10T117/10
摘要： The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which electric current is supplied and a cylindrical heat generating part by resistance heating and are provided so as to surround a crucible for containing a raw material melt wherein the heat generating part has heat generating slit parts formed by being provided with upper slits extending downward from the upper end and lower slits extending upwards from the lower end by turns, and a length of at least one slit of the upper slits differs from others and/or a length of at least one slit of the lower slits differs from others so that a heat generating distribution of the heat generating part may be changed. Thereby, there can be provided a graphite heater for producing a single crystal which makes it possible to produce a silicon single crystal with high productivity when the silicon single crystal is pulled in a predetermined defect-free region or a predetermined defect region.
摘要翻译： 本发明公开了一种石墨加热器，用于生产通过切克劳斯基法生产单晶时使用的单晶，该方法至少包括供给电流的端子部分和电阻加热的圆柱形发热部分， 围绕用于容纳原料熔体的坩埚，其中发热部具有通过从上端向下延伸的上部狭缝形成的发热狭缝部和由下端向上延伸的下部狭缝，并且至少具有长度 上缝隙的一个狭缝与其他狭缝不同，和/或下狭缝的至少一个狭缝的长度不同，从而可以改变发热部分的发热分布。 因此，可以提供一种用于制造单晶的石墨加热器，当在预定的无缺陷区域或预定缺陷区域中拉伸硅单晶时，可以以高生产率制造单晶硅。
-
公开(公告)号：US07226507B2
公开(公告)日：2007-06-05
申请号：US10561865
申请日：2004-05-27
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。
-
-
-
-
-
-
-
-
-
搜索结果
59 条记录 (耗时 0.024 秒)
