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1.发明授权
公开(公告)号：US5637309A
公开(公告)日：1997-06-10
申请号：US309152
申请日：1994-09-20
申请人： Masahiro Tajima , Takashi Yoshimoto , Shoji Fukushima , Toshihiko Kaminuma , Ritsuko Ehama , Takaaki Baba , Kazuo Watabe
发明人： Masahiro Tajima , Takashi Yoshimoto , Shoji Fukushima , Toshihiko Kaminuma , Ritsuko Ehama , Takaaki Baba , Kazuo Watabe
CPC分类号： C07K14/43577 , A61K38/225 , A61K9/2013 , A61K9/2027 , A61K9/205 , A61K9/2054 , A61K38/00 , Y10S514/808 , Y10S514/929
摘要： A prolonged releasing pharmaceutical preparation is provided carrying a physiologically active substance, particularly, calcitonin gene-related peptide (CGRP) or a maxadilan (MAX). This pharmaceutical preparation can attain the expected effects by incorporating the physiologically active substance into a combination, as carriers for the physiologically active substance, of a cellulosic polymer and at least one auxiliary component selected from the group consisting of fats and oils, waxes, fatty acids, saccharides and polyacrylate ester derivatives. The pharmaceutical preparation can conveniently be used, in living bodies, particularly as an intrathecal implantation-type preparation.
摘要翻译： 提供延长释放的药物制剂，其携带生理活性物质，特别是降钙素基因相关肽（CGRP）或maxadilan（MAX）。 这种药物制剂可以通过将生理活性物质并入作为生理活性物质的载体的纤维素聚合物和至少一种选自脂肪和油，蜡，脂肪酸的辅助成分的组合来实现预期的效果 ，糖和聚丙烯酸酯衍生物。 药物制剂可以方便地用于生物体中，特别是鞘内注射型制剂。
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2.发明授权Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication 有权使用具有降低的相分离的III族氮化物四元体系的半导体结构和制造方法公开(公告)号：US06472679B1
公开(公告)日：2002-10-29
申请号：US09476017
申请日：1999-12-31
IPC分类号： H01L2906
CPC分类号： H01L33/32
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAlNP layer of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAlNP active layer substantially without phase separation, and a third ternary, quaternary or pentenary InGaAlNP material layer of an opposite conduction type formed substantially without phase separation.
摘要翻译： III族氮化物四元和五元系材料系统和方法被公开用于半导体结构，包括激光二极管，晶体管和光电检测器，其减少或消除相分离并提供增加的发射效率。 在示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的InGaAlNP层的第一三元，四元或五元层材料层，使用基本上不相分离的InGaAlNP活性层的四元或五元素材料活性层，以及 基本上没有相分离形成的相反导电类型的第三三元，四元或五元组InGaAlNP材料层。
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公开(公告)号：US4393400A
公开(公告)日：1983-07-12
申请号：US267520
申请日：1981-05-27
CPC分类号： H04N13/00
摘要： A flickerless 3-D TV viewing system is designed to be used with a single TV receiver set and with a set of stereoscopic glasses composed of light shutters.The system includes a signal-distributor, a set of memory devices, a signal-selector, a synchronous signal separator, a discriminator and a timing circuit. The system is very comfortable for the user during 3-D TV viewing.
摘要翻译： 无闪烁的3-D电视观看系统设计用于单个电视接收机和一组由光闸组成的立体眼镜。 该系统包括信号分配器，一组存储器件，信号选择器，同步信号分离器，鉴别器和定时电路。 在3-D电视观看期间，该系统对于用户来说非常舒适。
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公开(公告)号：US07263575B2
公开(公告)日：2007-08-28
申请号：US10441172
申请日：2003-05-20
申请人： Takamasa Oguri , Takaaki Baba
发明人： Takamasa Oguri , Takaaki Baba
IPC分类号： G06F12/00
CPC分类号： G06F12/1433 , B60W2050/0005 , F02D41/2425 , F02D41/26 , G05B19/0426 , G05B2219/23051 , G05B2219/24155 , G05B2219/24167 , G05B2219/2637
摘要： An ECU includes a microcomputer that has an integrated flash memory. An initial writing flag is set in the microcomputer before an initial writing to the flash memory. The microcomputer enters into a writing mode when the flag determines permission of data writing. When the data-writing to the flash memory is completed, the flag is cleared.
摘要翻译： ECU包括具有集成闪存的微型计算机。 在对闪存进行初始写入之前，在微计算机中设置初始写入标志。 当标志确定数据写入的许可时，微型计算机进入写入模式。 闪存数据写入完成后，标志被清除。
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5.发明申请Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication 失效使用具有降低的相分离的III族氮化物材料体系和制造方法的半导体结构公开(公告)号：US20050161698A1
公开(公告)日：2005-07-28
申请号：US11073872
申请日：2005-03-08
申请人： Toru Takayama , Takaaki Baba , James Harris
发明人： Toru Takayama , Takaaki Baba , James Harris
IPC分类号： H01L29/201 , H01L31/103 , H01L33/32 , H01S5/323 , H01S5/343 , H01L29/24
CPC分类号： H01L29/201 , B82Y20/00 , H01L31/1035 , H01L33/32 , H01S5/22 , H01S5/32 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BInGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BInGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BInGaAlN material system of an opposite conduction type formed substantially without phase separation.
摘要翻译： 公开了用于半导体结构（包括激光二极管，晶体管和光电检测器）的III族 - 氮化物四元和五元材料体系和方法，其减少或消除相分离并提供增加的发射效率。 在一个示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的BInGaAlN材料体系的第一三元，四元或五元素材料层，以及基本上不相分离的BInGaAlN材料体系的四元或五元素材料活性层，以及 使用基本上不相分离形成的相反导电类型的BInGaAlN材料体系的第三三元，四价或五元素材料层。
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6.发明授权Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication 失效使用具有降低的相分离的III族氮化物材料体系和制造方法的半导体结构公开(公告)号：US06903364B1
公开(公告)日：2005-06-07
申请号：US09442077
申请日：1999-11-16
IPC分类号： H01L29/201 , H01L31/103 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L29/201 , B82Y20/00 , H01L31/1035 , H01L33/32 , H01S5/22 , H01S5/32 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.
摘要翻译： 公开了用于半导体结构（包括激光二极管，晶体管和光电检测器）的III族 - 氮化物四元和五元材料体系和方法，其减少或消除相分离并提供增加的发射效率。 在示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的BlnGaAlN材料体系的第一三元或四元或五元层材料层，以及基本上不相分离的BlnGaAlN材料体系的四元或五元素材料活性层，以及 使用基本上不相分离形成的相反导电类型的BlnGaAlN材料系统的第三三元，四元或五元素材料层。
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公开(公告)号：US06197441B1
公开(公告)日：2001-03-06
申请号：US09124889
申请日：1998-07-30
申请人： Masaaki Yuri , Tetsuzo Ueda , Takaaki Baba
发明人： Masaaki Yuri , Tetsuzo Ueda , Takaaki Baba
IPC分类号： H01L21203
CPC分类号： C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/0254 , H01L21/02631 , H01L21/02658
摘要： The object of the present invention is to form a cubic nitride semiconductor layer of excellent surface flatness and crystallization on a cubic III-V family compound semiconductor substrate, featuring a fabrication method that comprises the steps of forming a cubic semiconductor layer 2 containing aluminum, nitriding one surface of the semiconductor layer 2 by heating in an atmosphere of a nitrogen compound and then supplying a nitrogen compound and a compound containing III family elements to form a cubic nitride semiconductor layer 3 on the semiconductor layer 2.
摘要翻译： 本发明的目的是在立方体III-V族化合物半导体衬底上形成表面平整度和结晶度优异的立方氮化物半导体层，其特征在于包括以下步骤：形成含铝的立方半导体层2，氮化 在氮化合物的气氛中加热半导体层2的一个表面，然后在半导体层2上提供氮化合物和含有III族元素的化合物以形成立方氮化物半导体层3。
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公开(公告)号：US4626898A
公开(公告)日：1986-12-02
申请号：US595379
申请日：1984-03-30
申请人： Takaaki Baba , Gerald T. O'Keefe
发明人： Takaaki Baba , Gerald T. O'Keefe
摘要： A digital color camera for converting an input optical image to a standard color television signal by using digital signal processing techniques includes: an image sensor for converting optical signals to a series of pixel signals; an analog to digital converting circuit for producing digital pixel signals; a digital signal detecting circuit for separating the digital pixel signals into a digital luminance signal and a digital chrominance difference signal; a digital chrominance signal processing circuit for producing two independent digital chrominance difference signals; a digital luminance signal correction circuit for making a gamma correction on the digital luminance signal; a color television signal encoding circuit for producing an analog standard color television signal from the two independent digital chrominance difference signals and the gamma corrected luminance signal. These circuits are controlled by timing pulses produced by a control timing generating circuit driven by a driving circuit. The digital signal detecting circuit includes: a pixel signal separation circuit for separating the digital pixel signals into two digital color pixel signals; a first digital addition circuit for adding the two digital color pixel signals; a pixel signal inverting circuit for inverting one of the two digital color pixel signals, and a second digital addition circuit for adding the other of the two digital color pixel signals with an output signal of the pixel signal inverting circuit.
摘要翻译： 一种用于通过使用数字信号处理技术将输入光学图像转换成标准彩色电视信号的数字彩色相机包括：用于将光信号转换成一系列像素信号的图像传感器; 用于产生数字像素信号的模数转换电路; 数字信号检测电路，用于将数字像素信号分离成数字亮度信号和数字色度差信号; 用于产生两个独立的数字色度差信号的数字色度信号处理电路; 用于对数字亮度信号进行伽马校正的数字亮度信号校正电路; 彩色电视信号编码电路，用于根据两个独立的数字色度差信号和伽马校正的亮度信号产生模拟标准彩色电视信号。 这些电路由由驱动电路驱动的控制定时产生电路产生的定时脉冲控制。 数字信号检测电路包括：像素信号分离电路，用于将数字像素信号分离成两个数字彩色像素信号; 用于添加两个数字彩色像素信号的第一数字加法电路; 用于反转两个数字彩色像素信号中的一个的像素信号反相电路，以及用于将两个数字彩色像素信号中的另一个与像素信号反相电路的输出信号相加的第二数字加法电路。
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公开(公告)号：US4267560A
公开(公告)日：1981-05-12
申请号：US974548
申请日：1978-12-29
申请人： Toshiro Ishikawa , Teruo Kitani , Takaaki Baba
发明人： Toshiro Ishikawa , Teruo Kitani , Takaaki Baba
CPC分类号： H04N5/45
摘要： A color television receiver receiving two television signals of different channels, compressing the time axis of one of the television signals, and inserting this compressed television signal in a portion of the other television signal for displaying the pictures of the two channels on the same screen. In the receiver, the luminance signal, chrominance signal and synchronizing signal are derived from each of the received two television signals. A writing clock pulse signal is produced on the basis of one of the synchronizing signals for writing the luminance signal and chrominance signal in the corresponding television signal in a memory circuit, while a reading clock pulse signal is produced on the basis of the other synchronizing signal to read out the luminance signal and chrominance signal from the memory circuit in a relation in which these signals are compressed in the time axis. After the luminance signal and chrominance signal read out from the memory circuit are adjusted in their signal levels relative to the luminance signal and chrominance signal in the other television signal, a portion of the luminance signal and chrominance signal in the other television signal is replaced by the luminance signal and chrominance signal read out from the memory circuit so that the pictures of the two channels can be displayed on the same screen.
摘要翻译： 接收两个不同频道的电视信号的彩色电视接收机，压缩一个电视信号的时间轴，并将该压缩电视信号插入另一个电视信号的一部分，以便在同一屏幕上显示两个频道的图像。 在接收机中，从所接收的两个电视信号中的每一个导出亮度信号，色度信号和同步信号。 基于用于在存储器电路中将相应的电视信号中的亮度信号和色度信号写入的同步信号之一产生写入时钟脉冲信号，同时基于另一个同步信号产生读取时钟脉冲信号 以这些信号在时间轴上被压缩的关系从存储器电路读出亮度信号和色度信号。 在从存储器电路读出的亮度信号和色度信号相对于其他电视信号中的亮度信号和色度信号的信号电平进行调节之后，另一个电视信号中的亮度信号和色度信号的一部分被替换为 从存储器电路读出的亮度信号和色度信号，使得两个通道的图像能够显示在同一个屏幕上。
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10.发明授权Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication 失效使用具有降低的相分离的III族氮化物材料体系和制造方法的半导体结构公开(公告)号：US07391062B2
公开(公告)日：2008-06-24
申请号：US11073872
申请日：2005-03-08
IPC分类号： H01L29/06
CPC分类号： H01L29/201 , B82Y20/00 , H01L31/1035 , H01L33/32 , H01S5/22 , H01S5/32 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BInGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BInGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BInGaAlN material system of an opposite conduction type formed substantially without phase separation.
摘要翻译： 公开了用于半导体结构（包括激光二极管，晶体管和光电检测器）的III族 - 氮化物四元和五元材料体系和方法，其减少或消除相分离并提供增加的发射效率。 在一个示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的BInGaAlN材料体系的第一三元，四元或五元素材料层，以及基本上不相分离的BInGaAlN材料体系的四元或五元素材料活性层，以及 使用基本上不相分离形成的相反导电类型的BInGaAlN材料体系的第三三元，四价或五元素材料层。
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