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公开(公告)号：US07515776B1
公开(公告)日：2009-04-07
申请号：US11524035
申请日：2006-09-19
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/0147 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators including such SiGe quantum wells can be operated at temperatures other than room temperature. Such temperature control is preferred for providing optical modulators that operate in the telecommunication C band (˜1530 nm to ˜1565 nm).
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。 满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用，特别是光学调制器有用的物理效应。 在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。 量子阱屏障组合物可以具有或不具有凯恩样条带。 包括这种SiGe量子阱的光学调制器可以在室温以外的温度下操作。 这样的温度控制优选用于提供在通信C带（〜1530nm至〜〜〜〜6565nm）内工作的光调制器。
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公开(公告)号：US4285000A
公开(公告)日：1981-08-18
申请号：US19807
申请日：1979-03-12
IPC分类号： H01L29/765 , H01L29/78 , G11C19/28 , H01L29/06 , H01L29/56
CPC分类号： H01L29/765
摘要： A charge coupled device has a semi-insulating semiconductor for a substrate. Resistivity of the semiconductor is at least 10.sup.6 ohm cm. A semi-conductive layer is grown epitaxially or is implanted on the substrate to form a thin, active, charge transport layer. A row of parallel, closely spaced gates on the charge transport layer provides individual storage wells in the charge transport layer. In a preferred embodiment, ohmic contacts adjacent the first and last gates in the row of gates provide a means for injecting a signal into the charge transport layer and a means for detecting the signal. Preferably, the substrate is semi-insulating GaAs and the gates are Schottky barrier gates.
摘要翻译： 电荷耦合器件具有用于衬底的半绝缘半导体。 半导体的电阻率至少为106欧姆厘米。 半导体层外延生长或植入到衬底上以形成薄的，有活性的电荷传输层。 在电荷传输层上的一排平行的，紧密间隔的栅极提供电荷输送层中的各个存储阱。 在优选实施例中，邻近栅极行中的第一和第二栅极的欧姆接触提供用于将信号注入电荷传输层的装置和用于检测信号的装置。 优选地，衬底是半绝缘GaAs，栅极是肖特基势垒栅极。
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公开(公告)号：US07902046B2
公开(公告)日：2011-03-08
申请号：US11524499
申请日：2006-09-19
申请人： Yu-Hsuan Kuo , James S. Harris, Jr.
发明人： Yu-Hsuan Kuo , James S. Harris, Jr.
CPC分类号： C30B33/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532
摘要： Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a temperature higher than the growth temperature. Additional buffer layers can be included following the same steps. The SiGe buffer is significantly lattice mismatched with respect to the substrate, and is preferably substantially lattice matched with a SiGe device to be grown on top of the buffer. The resulting buffer structure is relatively thin and provides low defect density, and low surface roughness. Disadvantages of thick graded buffer layers, such as high cost, high surface roughness, mechanical fragility, and CTE mismatch, are thereby avoided.
摘要翻译： 通过在生长温度下沉积SiGe缓冲层，然后在高于生长温度的温度下对所得到的结构进行退火来提供SiGe在显着晶格错配衬底（例如Si）上的生长。 可以按照相同的步骤包括附加的缓冲层。 SiGe缓冲液相对于衬底显着地晶格失配，并且优选地与要在缓冲器顶部生长的SiGe器件基本上晶格匹配。 得到的缓冲结构相对较薄，提供低缺陷密度和低表面粗糙度。 从而避免了诸如高成本，高表面粗糙度，机械脆性和CTE不匹配等厚梯度缓冲层的缺点。
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公开(公告)号：US07515777B2
公开(公告)日：2009-04-07
申请号：US11524505
申请日：2006-09-19
CPC分类号： G02F1/017 , B82Y20/00 , G02B6/12004 , G02B2006/12142 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035236 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators and/or detectors according to the invention are suitable for inclusion in waveguide-based optical interconnects. Such interconnects can be on-chip interconnects or chip to chip interconnects.
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。 满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用，特别是光学调制器有用的物理效应。 在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。 量子阱屏障组合物可以具有或不具有凯恩样条带。 根据本发明的光调制器和/或检测器适用于纳入基于波导的光学互连。 这种互连可以是片上互连或芯片到芯片互连。
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5.发明授权Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication 失效使用具有降低的相分离的III族氮化物材料体系和制造方法的半导体结构公开(公告)号：US06903364B1
公开(公告)日：2005-06-07
申请号：US09442077
申请日：1999-11-16
IPC分类号： H01L29/201 , H01L31/103 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L29/201 , B82Y20/00 , H01L31/1035 , H01L33/32 , H01S5/22 , H01S5/32 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.
摘要翻译： 公开了用于半导体结构（包括激光二极管，晶体管和光电检测器）的III族 - 氮化物四元和五元材料体系和方法，其减少或消除相分离并提供增加的发射效率。 在示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的BlnGaAlN材料体系的第一三元或四元或五元层材料层，以及基本上不相分离的BlnGaAlN材料体系的四元或五元素材料活性层，以及 使用基本上不相分离形成的相反导电类型的BlnGaAlN材料系统的第三三元，四元或五元素材料层。
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公开(公告)号：US06653706B1
公开(公告)日：2003-11-25
申请号：US09567179
申请日：2000-05-08
IPC分类号： H01C3100
CPC分类号： H01L31/1852 , H01L31/09 , H01L31/1085 , Y02E10/544
摘要： A high efficiency optical interconnect (OI) deposited directly on a silicon based IC by a low temperature process that utilizes a heterogeneous crystalline structure of a III-V compound material to convert light pulses into electrical signals. The high efficiency is established by pulsing the light beams with a shorter duration than the life time of the generated carriers and by reducing the structural volume and consequently the internal capacitance of the III-V compound to a functional height of approximately 1 micron. The analog MSM characteristic of the OI is bypassed by differential two-beam signal processing, wherein the intensity difference of two synchronous light beams is transformed in two parallel OI's into two electrical signals that compensate in a central node. The resulting polarity in the node switches either a PMOS or a NMOS transistor, which connect either a positive or negative voltage to the output node.
摘要翻译： 通过利用III-V复合材料的异质晶体结构的低温工艺将直接沉积在硅基IC上的高效光学互连（OI）将光脉冲转换成电信号。 通过以比产生的载流子的寿命短的持续时间脉冲光束和通过将III-V族化合物的内部电容降低到大约1微米的功能高度来建立高效率。 OI的模拟MSM特性被差分双波束信号处理旁路，其中两个同步光束的强度差在两个并行OI中变换成两个电信号，在中心节点进行补偿。 在节点中产生的极性切换PMOS或NMOS晶体管，其将正电压或负电压连接到输出节点。
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公开(公告)号：US06380531B1
公开(公告)日：2002-04-30
申请号：US09451470
申请日：1999-11-30
申请人： Fred Sugihwo , James S. Harris, Jr.
发明人： Fred Sugihwo , James S. Harris, Jr.
IPC分类号： H01L3100
CPC分类号： B82Y20/00 , G01J3/02 , G01J3/0256 , G01J3/26 , G02B26/001 , G02B26/02 , H01L31/02325 , H01L31/035236 , H01L31/101
摘要： A light detector comprising a photodetector disposed within an etalon or microcavity. The light detector is sensitive to light having a wavelength resonant with the etalon. Preferably, the etalon is a solid state microcavity having distributed bragg reflectors. The photodetector may be a photodiode, phototransistor or the like. The etalon has a front reflector with reflectivity Rf and a back reflector with reflectivity Rb. The photodetector has a double-pass absorption of A. In the present invention, Rf, Rb, and A are selected such that Rf=Rb(1−A). The combination of the back reflector and absorbing photodetector is indistinguishable from a single reflector of reflectivity Rf. Therefore, the light detector behaves like an etalon with matched reflectors. Preferably, Rf is greater than 0.95 and Rb is greater than 0.98. The photodetector can have a relatively thin absorption layer, thereby providing high speed capability. Even with a low absorption, the photodetector provides high quantum efficiency since it is within the etalon. Preferably, the front reflector is movable such that an etalon cavity length is adjustable. This provides for adjustment of the wavelength at which the light detector is sensitive.
摘要翻译： 一种光检测器，包括设置在标准具或微腔内的光电检测器。 光检测器对具有与标准具共振的波长的光敏感。 优选地，标准具是具有分布式布拉格反射器的固态微腔。 光电检测器可以是光电二极管，光电晶体管等。 标准具具有反射率为Rf的前反射器和具有反射率Rb的后反射器。 光电检测器具有A的双程吸收。在本发明中，选择Rf，Rb和A使得Rf = Rb（1-A）。 背反射器和吸收光电探测器的组合与反射率Rf的单个反射器无法区分。 因此，光检测器的行为就像具有匹配反射器的标准具。 优选地，Rf大于0.95，Rb大于0.98。 光电检测器可以具有相对较薄的吸收层，从而提供高速能力。 即使具有低吸收，光电探测器也提供高量子效率，因为它在标准具内。 优选地，前反射器是可移动的，使得标准具腔长度可调。 这提供了光检测器敏感的波长的调整。
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公开(公告)号：US4227943A
公开(公告)日：1980-10-14
申请号：US45502
申请日：1979-06-04
摘要： A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SNBr.sub.0.4).sub.x. Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semiconductor is silicon. In a second preferred embodiment, the semiconductor is GaAs on an n.sup.+ -type conductivity GaAs substrate.
摘要翻译： 通过用掺杂有溴的聚合硫氮化物（SNBr0.4）x的薄层涂覆n型导电半导体来构造太阳能电池。 在两种材料上都提供金属沉积物，用于与电池电接触。 在优选实施例中，半导体是硅。 在第二优选实施例中，半导体是在n +型导电GaAs衬底上的GaAs。
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公开(公告)号：US20120006390A1
公开(公告)日：2012-01-12
申请号：US13065710
申请日：2011-03-28
申请人： Yijie Huo , Anjia Gu , James S. Harris, JR. , Shu Hu , Paul C. Mclntyre
发明人： Yijie Huo , Anjia Gu , James S. Harris, JR. , Shu Hu , Paul C. Mclntyre
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035227 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02463 , H01L21/02488 , H01L21/02502 , H01L21/02513 , H01L21/02546 , H01L21/02587 , H01L21/02631 , H01L31/035281 , H01L31/03529 , H01L31/0392 , H01L31/03921 , H01L31/03925 , H01L31/0687 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Solar cells or photodetectors having one or more single-crystal shell layers conformally deposited on Ge nano-wires are provided. This approach can provide higher efficiency and/or reduced material cost compared to conventional planar approaches for multi-junction solar cells having the same thickness of active solar absorption materials. Shell layers deposited on the Ge nano-wires and including pn junctions can be grown such that they end up with single-crystal faceted tips, which can significantly improve optical collection efficiency and can improve the electron collection efficiency because of the high crystal quality.
摘要翻译： 提供具有一个或多个保形地沉积在Ge纳米线上的单晶壳层的太阳能电池或光电探测器。 与具有相同厚度的活性太阳能吸收材料的多结太阳能电池相比，该方法可以提供更高的效率和/或降低的材料成本。 可以生长沉积在Ge纳米线上并包括pn结的壳层，使得它们结束于单晶刻面，这可以显着提高光学收集效率，并且由于高的晶体质量而可以提高电子收集效率。
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公开(公告)号：US07604981B1
公开(公告)日：2009-10-20
申请号：US10384166
申请日：2003-03-07
CPC分类号： G01N21/6454 , G01N21/6408
摘要： A variety of types of molecules are detected and/or analyzed using an integrated micro-circuit arrangement. According to an example embodiment of the present invention, a micro-circuit arrangement detects excitable target markers in response to an excitation source. The excitation source emits a first electromagnetic radiation to excite one or more target markers into emitting a second electromagnetic radiation. The excitation source and detector combination can be optimized to detect a specific characteristic of a biological specimen. In this manner, an excitation source can be combined with several optical-detectors or detection channels, where each optical-detector is measuring or sensing the same or different characteristic of the biological specimen.
摘要翻译： 使用集成微电路装置检测和/或分析各种类型的分子。 根据本发明的示例性实施例，微电路装置响应于激发源检测可激发的目标标记。 激发源发射第一电磁辐射以激发一个或多个目标标记物发射第二电磁辐射。 可以优化激发源和检测器组合以检测生物样品的特定特征。 以这种方式，激发源可以与几个光学检测器或检测通道组合，其中每个光学检测器正在测量或感测生物样本的相同或不同的特性。
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